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EE5342 – Semiconductor Device Modeling and Characterization Lecture 23 - Spring 2004

EE5342 – Semiconductor Device Modeling and Characterization Lecture 23 - Spring 2004. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Reverse Early VAR extraction. VAR eff = - i E /[  i E /  v BE ] vBC VAR was set at 200V for this data When v BE = 0

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EE5342 – Semiconductor Device Modeling and Characterization Lecture 23 - Spring 2004

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  1. EE5342 – Semiconductor Device Modeling and CharacterizationLecture 23 - Spring 2004 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. Reverse EarlyVAR extraction VAReff = -iE/[iE/vBE]vBC • VAR was set at 200V for this data • When vBE = 0 vBC = 0.75VAR=200.5 vBC = 0.85VAR=200.2 vBC = 0.75 V vBC = 0.85 V VAReff(V) vs. vEC (V)

  3. Forward EarlyVAf extraction VAFeff = -iC/[iC/vBC]vBE • VAF was set at 100V for this data • When vBC = 0 vBE = 0.75VAF=101.2 vBE = 0.85VAF=101.0 vBE = 0.75 V vBE = 0.85 V VAFeff(V) vs. vCE (V)

  4. Forward ActiveHybrid-pi Circuit model Fig 9.33*

  5. Gummel PoonBase Resistance If IRB = 0, RBB = RBM+(RB-RBM)/QB If IRB > 0 RB = RBM + 3(RB-RBM)(tan(z)-z)/(ztan2(z)) Regarding (i) RBB and (x) RTh on previous slide, RBB = Rbmin + Rbmax/(1 + iB/IRB)aRB

  6. h11_vs_ib

  7. h11_vs_frequency

  8. h11_vs_1/ib

  9. Gummel-Poon Staticnpn Circuit Model C RC Intrinsic Transistor C’ IBR B RBB ILC IBF B’ ILE E’ RE E

  10. IBF = ISexpf(vBE/NFVt)/BF ILE = ISEexpf(vBE/NEVt) IBR = ISexpf(vBC/NRVt)/BR ILC = ISCexpf(vBC/NCVt) QB = (1 + vBC/VAF + vBE/VAR ) {½ + [¼ + (BFIBF/IKF + BRIBR/IKR)]1/2} Gummel Poon npnModel Equations

  11. iC RC vBC - iB + + RBB vBE - vBEx RE BJT CharacterizationForward Gummel vBCx= 0 = vBC + iBRB - iCRC vBEx = vBE +iBRB +(iB+iC)RE iB = IBF + ILE = ISexpf(vBE/NFVt)/BF + ISEexpf(vBE/NEVt) iC = bFIBF/QB = ISexpf(vBE/NFVt)  (1-vBC/VAF-vBE/VAR ) {IKF terms}-1 vBE = vBEx –iBRBB -(iB+iC)RE

  12. Sample fg data forparameter extraction • IS = 10f • NF = 1 • BF = 100 • Ise = 10E-14 • Ne = 2 • Ikf = .1m • Var = 200 • Re = 1 • Rb = 100 iC, iB vs. vBEext iC data iB data

  13. Definitions ofNeff and ISeff • In a region where iC or iB is approxi-mately a single exponential term, then iC or iB ~ ISeffexp (vBEext /(NFeffVt) where Neff={dvBEext/d[ln(i)]}/Vt, and ISeff = exp[ln(i) - vBEext/(NeffVt)]

  14. Simple extractionof IS, ISE from data Data set used • IS = 10f • ISE = 10E-14 Flat ISeff for iC data = 9.99E-15 for 0.230 < vD < 0.255 Max ISeff value for iB data is 8.94E-14 for vD = 0.180 iC data iB data ISeff vs. vBEext

  15. Forward Gummelextr. of IS and IS/BF ISextr – should to Neff at same point IS/BF extr

  16. Simple extraction of NF, NE from fg data Data set used NF=1 NE=2 Flat Neff region from iC data = 1.00 for 0.195 < vD < 0.390 Max Neff value from iB data is 1.881 for 0.180 < vD < 0.181 iB data iC data NEeff vs. vBEext

  17. Simple extractionof BF from data • Data set used BF = 100 • Extraction gives max iC/iB = 92 for 0.50 V < vD < 0.51 V 2.42A< iD < 3.53A • Minimum value of Neff =1 for slightly lower vD and iD iC/iB vs. iC

  18. RC vBCx vBC - iB + + RB vBE - RE iE BJT CharacterizationReverse Gummel vBEx= 0 = vBE + iBRB - iERE vBCx = vBC +iBRB +(iB+iE)RC iB = IBR + ILC = ISexpf(vBC/NRVt)/BR + ISCexpf(vBC/NCVt) iE = bRIBR/QB = ISexpf(vBC/NRVt)/QB

  19. RC vBCx vBC - iB + + RB vBE - RE iE BJT CharacterizationReverse Gummel vBEx= 0 = vBE+ iBRB- iERE vBCx = vBC+iBRB+(iB+iE)RC iB = IBR + ILC = (IS/BR)expf(vBC/NRVt) + ISCexpf(vBC/NCVt) iE = bRIBR/QB = ISexpf(vBC/NRVt) (1-vBC/VAF-vBE/VAR ) {IKR terms}-1

  20. Sample rg data forparameter extraction • IS=10f • Nr=1 • Br=2 • Isc=10p • Nc=2 • Ikr=.1m • Vaf=100 • Rc=5 • Rb=100 iB data iE data iE, iB vs. vBCext

  21. Reverse GummelData Sensitivities Region a - IKRIS, RB, RC, NR, VAF Region b - IS, NR, VAF, RB, RC Region c - IS/BR, NR, RB, RC Region d - IS/BR, NR Region e - ISC, NC c vBCx = 0 a d e b iB iE iE(A),iB(A) vs. vBC(V)

  22. Simple extraction of NR, NC from rg data Data set used Nr = 1 Nc = 2 Flat Neff region from iE data = 1.00 for 0.195 < vBC < 0.375 Max Neff value from iB data is 1.914 for 0.195 < vBC < 0.205 iB data iE data NEeff vs. vBCext

  23. Simple extractionof IS, ISC from data Data set used • IS = 10fA • ISC = 10pA Min ISeff for iE data = 9.96E-15 for vBC = 0.200 Max ISeff value for iB data is 8.44E-12 for vBC = 0.200 iB data iE data ISeff vs. vBCext

  24. Simple extractionof BR from data • Data set used Br = 2 • Extraction gives max iE/iB = 1.7 for 0.48 V < vBC < 0.55V 1.13A< iE < 14.4A • Minimum value of Neff =1 for same range iE/iB vs. iE

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