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Introduction

Introduction. The configuration of InGaN / GaN MQWs plays a key role in the internal quantum efficiency(IQE ) of LEDs. In the MQW, the carriers must effectively increase the concentration and uniformly spread across all quantum wells to improve the IQE.

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Introduction

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  1. Introduction • The configuration of InGaN/GaN MQWs plays a key role in the internal quantum efficiency(IQE) of LEDs. • In the MQW, the carriers must effectively increase the concentration and uniformly spread across all quantum wells to improve the IQE. • In this study, we aimed to demonstrate the light output power enhancement of thick well short-period MQW LEDs with thickness-fluctuated InGaN well. • The effects of thick well short-period InGaN/GaN MQW LEDs with thickness-fluctuated InGaN well on the electrical and optical properties of GaN-based LEDs, as well as the fabrication process, are discussed.

  2. Experiments Chip size : 230 * 440μm2 p- pad ITO Mg-doped p-GaN 100 nm Mg-doped AlGaN 20 nm InGaN/GaN MQW 20 periods 1.3/1.8 nm InGaN/GaNsuperlattices n- pad 2 μm Si-doped n-GaN un-GaN 2 μm 1050 GaN nucleation layer 30 nm 560 c-plane sapphire

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