1 / 15

A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique

A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique. Microwave and Wireless Components Letters, IEEE Volume 17,  Issue 3,  March 2007 Page. 所別 : 積體電路設計研究所 學號 : 95662004 學生：賴秀全. Outline. Abstract Introduction Circuit Design

zahina
Download Presentation

A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique Microwave and Wireless Components Letters, IEEE Volume 17,  Issue 3,  March 2007 Page 所別 : 積體電路設計研究所 學號 : 95662004 學生：賴秀全

  2. Outline • Abstract • Introduction • Circuit Design • Simulation Results • Conclusion • References

  3. Abstract • A 3.1–10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused technique and a simple high-pass input matching network is proposed. • The proposed UWB LNA demonstrates the highest power gain and lowest NF among the published works in 0.18- m CMOS technology.

  4. Introduction • Ultra-wideband (UWB) communication techniques have attracted great interests in both academia and industry in the past few years for applications in short-range and high-speed wireless mobile systems. • This UWB LNA is designed in a fully chip implemented in the 0.18 um CMOS technology with a 1.8-V supply voltage.

  5. Fig 1. Cascade LNA.

  6. Fig 2. Current – reused LNA

  7. Fig 3. Schematic of the proposed current-reused LNA.

  8. Fig. 4. Microphotograph of the proposed LNA.

  9. Fig. 5. Measured and simulated input reflection coefficients.

  10. 16dB Fig. 6. Power gain and reverse isolation.

  11. 6dB 3dB Fig. 7. Measured and simulated NFs.

  12. TABLE I PERFORMANCE SUMMARY AND COMPARISON WITH PUBLISHED WORKS

  13. Conclusion • Current-reused technique for improving noise performance, achieving good input matching and high power gain. • The proposed LNA provided a peak power gain of 16 dB and a good input matching under a power dissipation of 11.9 mW.

  14. References • A. Komijani, A. Natarajan, and A. Hajimiri, “A 24-GHz, +14:5-dBm fully integrated power amplifier in 0.18-m CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 9, pp. 1901–1908, Sep. 2005. • K. Han, J. Gil, S.-S. Song, J.-H. Han, H. Shin, C.-K. Kim, and K. Lee, “Complete high-frequency thermal noise modeling of short-channel MOSFET’s and design of 5.2-GHz low noise amplifier,” IEEE J. Solid- State Circuits, vol. 40, no. 3, pp. 726–735, Mar. 2005. • M. T. Reiha, J. R. Long, and J. J. Pekarik, “A 1.2 V reactive-feedback 3.1–10.6 GHz ultrawideband low-noise amplifier in 0.13 m CMOS,”In Proc. IEEE RFIC Symp., San Francisco, CA, Jun. 2007, 2006, pp.55–58. • J. Lee and J. D. Cressler, “Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 3, pp. 1262–1268, Mar. 2006.

  15. Q&A Thank you

More Related