1 / 20

Polyimide memory: a pithy guideline for future applications

Advisor : Professor Guey-Sheng Liou Reporter : Ming-Chi Tsai Date : 2013/11/15. Polyimide memory: a pithy guideline for future applications. J. Mater. Chem. C, 2013 , 1 , 7623-7634, G. S. Liou * et al. Introduction Experiment Results and Discussion Summary. Outline.

zoe-diaz
Download Presentation

Polyimide memory: a pithy guideline for future applications

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Advisor : Professor Guey-ShengLiou Reporter: Ming-Chi Tsai Date : 2013/11/15 Polyimide memory: a pithy guideline for future applications J. Mater. Chem. C, 2013, 1, 7623-7634, G. S. Liou* et al.

  2. Introduction Experiment Results and Discussion Summary Outline

  3. Introduction

  4. Polymer memory devices • Advantages : • Low cost • Solution processability • Flexibility • 3D stacking device • Polyimide is one of the most suitable material for memory • Thermal stability • Chemical resistance • Mechanical strength

  5. Fabrication process of Polymer memory devices J. Mater. Chem. C, 2013, 1, 7623-7634, G. S. Liou* et al.

  6. Principle 1st sweep : 0~4V an abrupt increase in current observed at 3.2V (writing) 2nd sweep : 0~4V (reading) 3rd sweep : 0~-4V an abrupt decrease in current observed at -2.1V (erasing) 4th sweep : 0~-4V OFF state 5th sweep : 0~4V (rewriting) 6th sweep : 0~4V (reading) 7th sweep : 0~4V turn off external power 1 min device turned off (erasing) and (rewriting) 8th sweep : (reading) Memory type : DRAM J. Am. Chem. Soc., 2006, 128, 8732-8733, En-Tang Kang* et al.

  7. Principle • Field induced CT theory • Conformational change • LUMO Energy level • Dipole moment • Large conjugation J. Am. Chem. Soc., 2006, 128, 8732-8733, En-Tang Kang* et al.

  8. Experiment

  9. Polyimide synthesis • One-step polycondensation • Two-step polycondensation ShahramMehdipour-Ataei*, et al., Iranian Polymer Journal,2008, 17,95-124

  10. Results and Discussion

  11. Volatile DRAM and SRAM properties 1st sweep : 0~5V 2.7V (writing) 2nd sweep : 0~5V (reading) 3rd sweep : 0~-2V -0.9V (erasing) 4th sweep : 0~-2V OFF state 5th sweep : 0~5V (rewriting) 6th sweep : 0~5V (reading) 7th sweep : 0~5V power off 1 min (erasing) and (rewriting) 8th sweep : (reading) Memory type : DRAM 3rd sweep : 0~-6V-0.9V (erasing) -2.3V (writing) Can be written bidirectionally J. Appl. Phys., 2009, 105, 044501, En-Tang Kang* et al.

  12. Volatile DRAM and SRAM properties Good stability when operated time 1st sweep : 0~4V 2.3V (writing) 2nd sweep : 0~4V (reading) 3rd sweep : 0~-4V (reading) nonerasable 4th sweep : 0~-4V power off 4 mins (rewriting) 5th sweep : 0~-4V (reading) 6th sweep : 0~-4V power off 4 mins (rewriting) Memory type : SRAM Chem. Mater., 2009, 21, 3391–3399, En-Tang Kang* et al.

  13. Volatile DRAM and SRAM properties PI → PA DARM → SRAM J. Mater. Chem., 2012, 22, 14085, G. S. Liou* et al.

  14. Volatile DRAM and SRAM properties • PA (SARM device) • Block the occurring of back CT • Higher dipole moment • More nonplanar • Lower switching on voltage -3.3V • Higher HOMO energy level • Fewer intermediate LUMOs Stability test Both PI and PA memory devices are stability when operating

  15. Non-volatile FLASH and WORM type memory properties Take APTT-6FDA for example 1st sweep : 0~4V 1.6V (writing) 2nd sweep : 0~4V power off 10 mins (reading) 3rd sweep : 0~-6V (reading & erasing) -3.2V 4th sweep : 0~-6V OFFstate 5th sweep : 0~4V (rewriting) 6th sweep : 0~-4V power off 10 mins (reading) Memory type : Flash memory Macromolecules,2009, 42, 4456–4463, Mitsuru Ueda*, W. C. Chen* et al

  16. Non-volatile FLASH and WORM type memory properties • Write Once Read Many times (WORM) • Nonerasable • Highest dipole moment J. Mater. Chem., 2012, 22, 14085, G. S. Liou* et al.

  17. Non-volatile FLASH and WORM type memory properties From Volatile to Nonvolatile by PeryleneDiimideComposition in Random Copolymer Acceptor Donor The (PBI-0, PBI-1, PBI-2.5) and (PBI-5, PBI-10) devices provided volatile and nonvolatile WORM behavior, respectively. Macromolecules, 2012, 45, 4556, Mitsuru Ueda*, W. C. Chen*, C. L. Liu* et al.

  18. Summary

  19. Summary 3D structure (192 cells) In future application of PI as a good memory device material Flexible • Devices structure and operating mechanism of the memory device is quite simple • Low processing cost • Show extremely high endurance during long term operation

  20. Thanks for your attention

More Related