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Characterisation of TlBr Crystals for Detector Applications

Characterisation of TlBr Crystals for Detector Applications. V. Kozlov, M. Leskelä and H. Sipilä. Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland. IWORID2004. Detector properties. Crystal quality Purity (composition)

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Characterisation of TlBr Crystals for Detector Applications

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  1. Characterisation of TlBr Crystals for Detector Applications V. Kozlov, M. Leskelä and H. Sipilä Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland IWORID2004 Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  2. Detector properties • Crystal quality • Purity (composition) • Previous study* => Chemical aspects • Crystal growth • Purification • * V. Kozlov, M. Leskelä, T. Prohaska, G. Schultheis, G. Stingeder and H. Sipilä, Nucl. Instr. and Meth. A (2004) (in press) Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  3. This study => Crystal quality • Crystal growth • Annealing (+hydrothermal) • Methods: • X-ray rocking curve • IV & photo-current • X-ray Cu-radiation • Polarisation microscope Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  4. Sample production from the ingot and wafer mapping • Wafers and, then, slices were cut as is presented in Figure • Two large crystals of diameter 21 mm were grown using Bridgman method • <= Reference surface: plane (100) or (111) Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  5. Rocking curve mapping All slices were cut || to reference surface Reference slices => Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  6. Annealing: FWHM change Ar atmosphere Purewater An03 Src200oC SL02(111) 0.6 0.6 SL05(100) 2.8 1.4 SL06(211) ND 0.7 An04 Src 150oC 13(1)1(1) 2.5 1.2 13(1)2(1) 1.3 0.5 13(2)1(1) 1.8 1.4 13(2)2(1) 1.2 0.8 An05 Src 225oC 13(1)3(1) 0.7 0.2 13(1)4(1) 0.65 0.2 13(2)2(2) 2.7 0.35 13(2)3(1) 2.5 0.35 Abr.: ND - not detected 13(1)… - (111) planes 13(2)… - (100) planes Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  7. Effects of hydrothermal annealing during 5 days 150o C 225o C Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  8. rotation ~-5o Source slice10 at a start position rotation ~+15o -40o Slice12 annealed at 225o C at a start position rotation -42o Effect of TlBr crystal annealing • Source slice10 and annealed slice12 • Sample rotation in Nicole crossed Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  9. Irradiation: 440nm <= Dark box + “Dark” * 20 IV-measurements Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  10. Annealing: water, 150o C (unstable characteristic) • Annealing: water, 225o C (unstable characteristic) IV: Annealing • Annealing: Dry Ar, 200o C Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  11. Annealing: Ar, 200o C • Annealing: water, 150o C • Annealing: water, 225o C Photo-Current Spectra • Non annealed source • Normalisation by Max Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  12. Annealing: water, 150o C Annealing: water, 225o C X-ray response Annealing: Ar, 200o C Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  13. Conclusions • TlBr grown from melt is stressed and the block boundaries formed have complicated character • Annealing improves the crystal quality and as result electrical, optical and detection properties • Annealing in pure water asymmetrically modifies these properties that is probably caused by the concentration gradient of impurities • Several samples annealed in pure water reveal characteristics of a semiconductor doped Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

  14. Acknowledgements • Crystal growth: I.S. Lisitsky and M. Kuznetsov (GIREDMET, Russia) • Electrode deposition Marko Vehkämäki (University of Helsinki) • European Space Agency ESA • Finnish Technology Agency TEKES Department of Chemistry, University of Helsinki, Finland METOREX International Oy, Espoo, Finland

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