'Drift current' presentation slideshows

Lecture 4: Diffusion and the Fokker-Planck equation

Lecture 4: Diffusion and the Fokker-Planck equation. Outline: intuitive treatment Diffusion as flow down a concentration gradient Drift current and Fokker-Planck equation. Lecture 4: Diffusion and the Fokker-Planck equation. Outline: intuitive treatment

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Lecture 03 Semiconductor Physics

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Topic 2 Semiconductors Basics

ECE 271 Electronic Circuits I. Topic 2 Semiconductors Basics. Chapter Goals. Characterize resistivity of insulators, semiconductors, and conductors. Develop covalent bond and energy band models for semiconductors. Understand band gap energy and intrinsic carrier concentration.

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Outline

Outline. Chap. 1 Introduction Chap. 2 Basics of Semiconductor Physics Chap. 3 P-N Junctions Chap. 4 Metal-Semiconductor Junctions Chap. 5 Semiconductor Heterojunctions Chap. 6 Semiconductor solar cells & Photodiodes Chap. 7 Light Emitting Diodes & Semiconductor Lasers

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Diodes under Bias

Diodes under Bias. Qualitatively the function of the diode under bias can be described best in terms of energy band levels. In the intrinsic case, the diffusion current is matched by a drift current in the opposite direction, which is driven by the contact potential.

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EE 5340 Semiconductor Device Theory Lecture 6 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 6 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Second Assignment. Please print and bring to class a signed copy of the document appearing at http://www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf.

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Chapter 3 Carrier Action

Semiconductor Device Physics. Chapter 3 Carrier Action. Chapter 3. Carrier Action. Carrier Action. Three primary types of carrier action occur inside a semiconductor: Drift : charged particle motion in response to an applied electric field.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 3-Spring 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 3-Spring 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Classes of semiconductors. Intrinsic : n o = p o = n i , since N a &N d << n i =[N c N v exp(E g /kT)] 1/2 ,(not easy to get)

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Carrier Action

Chapter 3. Carrier Action. Carrier Action. Three primary types of carrier action occur inside a semiconductor: Drift : charged particle motion in response to an applied electric field. Diffusion : charged particle motion due to concentration gradient or temperature gradient.

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EE 5340 Semiconductor Device Theory Lecture 5 - Fall 2009

EE 5340 Semiconductor Device Theory Lecture 5 - Fall 2009. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Second Assignment. Please print and bring to class a signed copy of the document appearing at http://www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf.

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EE 4345 - Semiconductor Electronics Design Project Spring 2002 - Lecture 02

EE 4345 - Semiconductor Electronics Design Project Spring 2002 - Lecture 02. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Law of Mass Action. n o p o = n i 2 n i 2 = N c N v exp(E g /kT) = 1E10/cm 3 N c = 2.8E19/cm3, N v = 1.04E19/cm3 and n i = 1E10/cm3.

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Semiconductor Device Physics

Semiconductor Device Physics. Lecture 7 PN Junction Diodes: I-V Characteristics Dr. Gaurav Trivedi , EEE Department, IIT Guwahati. M ajority carriers. M ajority carriers. Qualitative Derivation. Current Flow in a pn Junction Diode.

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Nernst-Ettingshausen effect in graphene

PLMCN10. Nernst-Ettingshausen effect in graphene. Andrei Varlamov INFM-CNR, Tor Vergata, Italy Igor Lukyanchuk Universite Jules Vernes, France Alexey Kavokin University of Southampton, UK. Outline. Nernst-Ettingshausen effect: 124 years of studies

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ECE 3455: Electronics

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Current Flow

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EXAMPLE 4.1 OBJECTIVE

EXAMPLE 4.1 OBJECTIVE Calculate the drift current density induced in a semiconductor for a given applied electric field.

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