'Electron devices' presentation slideshows

IEEE ELECTRON DEVICES SOCIETY

IEEE ELECTRON DEVICES SOCIETY. OVERALL STRUCTURE AND ACTIVITIES Hiroshi Iwai Jr. Past President of EDS 03/06.

728 views • 55 slides

High Current Density and High Power Density Operation of Ultra High Speed InP DHBTs

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EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009

EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc Reverse bias junction breakdown E crit for reverse breakdown (M&K**) Taken from p. 198, M&K** Casey Model for E crit Reverse bias junction breakdown

738 views • 29 slides

ECE 3336 Introduction to Circuits & Electronics

ECE 3336 Introduction to Circuits & Electronics. Lecture Set # 7a Capacitors. Fall 2012, TUE&TH 5:30-7:00pm Dr. Wanda Wosik. Capacitors. A capacitor is a circuit element that stores electric charges and energy in electric fields. For DC conditions it acts as an open circuit

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EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009

EE 5340 Semiconductor Device Theory Lecture 13 - Fall 2009. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Reverse bias junction breakdown. E crit for reverse breakdown (M&K**). Taken from p. 198, M&K**. Casey Model for E crit. Reverse bias junction breakdown.

301 views • 29 slides

RF Technology

RF Technology. Professor Richard Carter Lancaster University Engineering Department 23 rd November 2006. Research group focus. Electromagnetics High power RF and microwave engineering Particle dynamics in RF electromagnetic fields Vacuum electronics. Courtesy of Thales Electron Devices.

570 views • 27 slides

J. H. Woo, Department of Electrical & Computer Engineering Texas A&M University

GEOMETRIC RELIEF OF STRAINED GaAs ON NANO-SCALE GROWTH AREA. J. H. Woo, Department of Electrical & Computer Engineering Texas A&M University. Table of Contents. INTRODUCTION BASIC PHYSICS ON EPITAXY SAMPLE DESCRIPTION RESULTS DISCUSSIONS FUTURE DEVELOPMENT CONCLUSIONS. Introduction.

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Nanotechnology in NEC FRL

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Source-gated Transistor

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Single-electron Devices

Single-electron Devices. Speaker: Qiaoyan Yu qiaoyan@ece.rochester.edu ECE423 12-16-2006. Agenda. Milestone Motivations New characteristics Single-electron transistor (SET) Challenges Conclusions. Milestone. In 1909, Millikan first illustrated the manipulation of single electrons.

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Evaluation of GaAs Power MESFET for Wireless Communication

Evaluation of GaAs Power MESFET for Wireless Communication. Li Xiang. Outline. Introduction on power amplifiers for wireless communications Specific requirements for power amplifier design How to evaluate efficiency and linearity Design example of a low-distortion power MESFET Summary.

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Evaluation of GaAs Power MESFET for Wireless Communication

Evaluation of GaAs Power MESFET for Wireless Communication. Li Xiang. Outline. Introduction on power amplifiers for wireless communications Specific requirements for power amplifier design How to evaluate efficiency and linearity Design example of a low-distortion power MESFET Summary.

277 views • 13 slides

Solar Cell Fundamentals

Solar Cell Fundamentals. SJSU Short Course D. W. Parent. Topics. History Solar Cell Basics Diode Major parts of a Si Solar Cell How does it work Absorption Losses Electrical Characteristics VOC, ISC, RS, RSH, Max Power Point Advantages/Disadvantages. History. 1839 Becquerel

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EDS Treasurer's Report -Albert Wang for Ravi Todi

EDS Treasurer's Report -Albert Wang for Ravi Todi. June, 2012 Leuven, Belgium. Budget Summary. * 2012 Q1 forecast ** 2013 Initial Budget ALL NUMBERS IN THOUSANDS OF U.S. DOLLARS. Publications and Member Dues Net Income. * 2012 Q1 forecast ** 2013 Initial Budget. Conference Net Income.

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Herb's Electron Devices

Herb's Electron Devices. Herb's Electron Devices: Herb's Bipolar Transistor. 670 GHz amplifier. 300 GHz PLL. 614 GHz VCO. 204 GHz digital logic. ?. ...plenty of steam left. Herb's Electron Devices: nanometers & 6.1 angstrom. What will the ultimate (4nm ???) FET look like ?.

157 views • 3 slides