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GaN nanorods grown on Si (111) substrate by Plasma-Assisted Molecular Beam Epitaxy. I. Abstract. II. Experiments. III. Results and discussion. Sample A (T S =780 ? ). Sample B (T S =790 ?). Sample C (T S =790 ?). Sample D (T S =790 ?). 500 nm n-GaN. 500 nm n-GaN. Growth direction.

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