1 / 33

ECE 662 – Microwave Electronics

ECE 662 – Microwave Electronics. Klystrons March 31, April 7, 2005. General Characteristics. Efficiency about 40% Power output Cw:  1MW Pulsed:  100MW @ 10 GHz Power Gain 15 to 70 dB Frequency  100 GHz Characteristics High pulse and CW power Medium bandwidth (2-15 %).

MikeCarlo
Download Presentation

ECE 662 – Microwave Electronics

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. ECE 662 – Microwave Electronics Klystrons March 31, April 7, 2005

  2. General Characteristics • Efficiency about 40% • Power output • Cw:  1MW • Pulsed:  100MW @ 10 GHz • Power Gain 15 to 70 dB • Frequency  100 GHz • Characteristics • High pulse and CW power • Medium bandwidth (2-15 %)

  3. General Characteristics

  4. Input Cavity +

  5. Input Cavity

  6. Bunching of Electrons

  7. Time/Distance Applegate Diagram

  8. Beam coupling coefficient

  9. Beam coupling coefficient

  10. Electron Bunching Process The net result of beam transit through the cavity is a sinusoidal Beam velocity modulation at cavity frequency  Faster electrons “catch” up with slower electrons. At a certain Distance L the electrons have “bunched” together. Here (at L) A second cavity is placed in order to induce microwave fields In the “output” of “catcher” cavity.

  11. Electron Bunching Process The distance from the buncher grid to the location of the of dense electron bunching for the electrons at tb is L = v0 (td -tb). Distances for electrons at ta and tc are L = vmin (td -ta) = vmin (td -tb+/(2)) (1) L = vmax (td -tc) = vmax (td -tb-/(2)) (2), where vmin= v0 {1-(V1)/(2V0)}; V0 =½(m/e)(v02), V1 =Ed, and vmax= v0 {1+(V1)/(2V0)}; equations (1) and (2) become L = v0(td -tb)+{v0 /(2)-v0[(V1)/(2V0)](td-tb)-v0[(V1)/(2V0)]/(2)} L = v0(td -tb)+{-v0 /(2)+v0[(V1)/(2V0)](td-tb)+v0[(V1)/(2V0)]/(2)}

  12. Electron Bunching Process For electrons at ta, tb, and tc to meet at the same distance L means that terms in both brackets {} must = 0. therefore td -tb = [(2V0)/(v0 V1)][v0/(2)][1-(V1)/(2V0)] ~ V0/V1, L ~ v0V0/V1 (space charge neglected & not max degree of bunching) Transit time in the field free region between grids is T = t2 - t1 = L/ v(t1) = T0 {1 - [(V1)/(2V0)] sin [t1 - (d)/(2v0)]} where T0=L/v0 and used (1 + x)-1 ~ 1- x; In radians T = t2 - t1 = L/ v0 - X sin [t1 - (d)/(2v0)], where X = (L/ v0) [(V1)/(2V0)] = Bunching parameter of a Klystron

  13. Electron Bunching Process At the buncher gap a charge dQ0 passing through at a time interval dt0 is given by dQ0 = I0 dt0 = i2 dt2, by conservation of charge, where i2 = current at the catcher gap. t2 = t0 +  + T0 {1 - [(V1)/(2V0)] sin [t0 + (d)/(2v0)]} dt2 / dt0 = 1 - X cos [t0 + (d)/(2v0)] i2 (t0) = I0 / {1 - X cos [t0 + (d)/(2v0)]} = current arriving at catcher. Using t2 = t0 +  + T0 , i2 (t2) = I0 / {1 - X cos [t2 - (L/v0) - [(d)/(2v0)]} Plot i2 for various X (corresponding to different L providing  and (V1)/(2V0 ) are fixed.)

  14. Electron Bunching Process  Electron bunching corresponds to current peaks that take place and for X  1; i2 is rich in harmonics of the input frequency which is the resonant frequency of both cavities. (Klystron can be run as a harmonic generator). Beam current at the catcher is a periodic waveform of period 2/ about a dc current.  expand i2 in a Fourier Series:

  15. Electron Bunching Process

  16. Cavity Spacing

  17. Catcher Cavity Phase of catcher gap voltage must be maintained in such a way that the bunched electrons as they pass through the grids encounter a retarding phase. Thus kinetic energy is transferred to the field of the catcher grid.The fundamental component of the induced current is given by:

  18. Catcher Cavity- Output Power Rsho = wall resistance of catcher cavity RB = beam loading resistance RL = external load resistance RSH = effective Shunt resistance I2 = If = fundamental component of the beam current at the catcher cavity V2 = fundamental component of the catcher gap voltage Output power delivered to the catcher and the load is given by

  19. Efficiency and Mutual Conductance of Klystron

  20. Output of Klystron

  21. Reflex Klystron Oscillator Can make an amplifier oscillate by providing regenerative feedback to input terminals. Simpler is reflex - single cavity oscillator, but lower power, 10-500mW, 1-25 GHz, 20-30 % eff. Widely used in radars. Key here is to have electrons be repelled such that they return to the gap in the form of a bunch. Time electron of velocity vi spends in the gap-repeller space dr is given by

  22. Reflex Klystron Oscillator The t1 electrons see accelerating phase and penetrate farthest into gap-repeller space. The t3 electrons see decelerating phase and spend least time in gap-repeller space. Note they all return when Rf is maximum in accelerating phase to give energy back to gap fields.

  23. Reflex Klystron Oscillator Theoretical Output Characteristics of a typical X-band reflex Klystron for a fixed accelerator voltage, V0. Average transit time should correspond to (N+3/4) cycles of Rf time where N=0, 1, 2, 3. Optimum positive feedback at cavity resonance, f, occurs when Frequency, f, changes slightly with repeller voltage - more tuning by mechanically adjusting the cavity. In general: High Q, Low BW.

  24. Reflex Klystron Oscillator Following the same analysis of the 2-cavity klystron amplifier, the bunching parameter for the reflex is

  25. Reflex Klystron Oscillator Note the peak is at X=2.408, X J1(X)=1.25

More Related