IEE5328 Nanodevice Transport Theory and Computational Tools

1. IEE5328 Nanodevice Transport Theory and Computational Tools Lecture 1: Introduction Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 20, 2013 IEE5328 Prof. MJ Chen NCTU

2. Motivation of this Nano Course Can we survive in the highly-challenging but widely-controversial future? IEE5328 Prof. MJ Chen NCTU

3. Two Elements of the Course - Advanced Device Physics- Hands-on Calculations IEE5328 Prof. MJ Chen NCTU

4. Three Features of the Course: • Industry Compatible • ITRS Oriented • Covering FETs down to 3-nm node ITRS : International Technology Roadmap for Semiconductors IEE5328 Prof. MJ Chen NCTU

5. IEE5328 Prof. MJ Chen NCTU

6. FETs Down-Scaling IEE5328 Prof. MJ Chen NCTU

7. Polysilicon Gate Bulk Planar Extension • Strained Silicon Channel • Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

8. High-k Metal Gate Bulk Planar Extension • Strained Silicon Channel • Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

9. High-k Metal Gate FinFETs or Multi-Gate FETs TSMC 10, 14, and 16 nm TSMC 20 nm Planar Structure Vertical Structure • Strained Silicon/Germanium/GaAs Channel • Substrate/Channel Orientation • Rsd issue IEE5328 Prof. MJ Chen NCTU

10. ITRS Roadmap IEE5328 Prof. MJ Chen NCTU

11. High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

12. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

13. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

14. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

15. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

16. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

17. Two Key Projections by ITRS: • EOT down to around 0.5 nm • - Tunneling • - Additional Mobility Degradation • Feature Size (Channel Length) down to 3 nm • - Non-equilibrium Transport • - DIBL Penetration • - Tunneling Printed Gate Length: as in layout phase Physical Gate Length Lg: post-processing as determined by TEM or C-V fitting Channel Length L: Physical Gate Length Lg minus 2 times the overlap extension Lov IEE5328 Prof. MJ Chen NCTU

18. The Purposes of the Course: • Provide Advanced Device Physics for a working nanoFET • Capture Key Points behind nanoFETs data and structures, simply through hands-on calculations IEE5328 Prof. MJ Chen NCTU

19. You will do during this course: • Capture Advanced Device Physics • Read good papers • Derive models and do calculations, given TCAD and/or experimental data - Also run TCAD • Establish Physical Pictures of your own IEE5328 Prof. MJ Chen NCTU

20. Course Contents IEE5328 Prof. MJ Chen NCTU

21. 1. High-k Metal-Gate Stacks: MOS Electrostatics • MOS Energy Band Diagrams • C-V • Defects, Oxygen Vacancies • Tunneling Paths • Models, TCAD, Experimental Data, Calculation, and Fitting 2. High-k Metal-Gate FETs: Channel Mobility • Quantum Confinement • Band Structure • Coulomb Impurity Scattering, Phonon Scattering, Surface Roughness Scattering • Remote Interface Plasmons Scattering, Remote Coulomb (Defects) Scattering, • Remote Soft Phonon Scattering • Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

22. 3. Band-to-Band Tunneling • Energy Band Diagrams • Tunneling Paths • Models, TCAD, Experimental Data, Calculation, and Fitting 4. Ballistic and Backscattering in Channel • Energy Band Diagrams • 2-D versus 1-D • Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

23. 5. Degraded Mobility and Saturation Current with Shrinking L • Energy Band Diagrams • Ballistic Mobility • Scattering by Highly-Doped Source/Drain Plasmons • Source Starvation • Models, TCAD, Experimental Data, Calculation, and Fitting 6. Threshold Roll-off and DIBL Penetration (Electrostatics from Source and Drain) • Energy Band Diagrams • 2-D versus 1-D • Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

24. 7. Other Issues of Significance - I • Ultrathin Source/Drain Extension Junction • Components of Series Resistance Rsd • Models, TCAD, Experimental Data, Calculation, and Fitting 8. Other Issues of Significance - II • Alternative Channel Materials: Ge, GaAs, and Graphene • Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

25. Course Material to be Delivered: • Lecture Notes, Prof. Ming-Jer Chen, 2013. • Literature Papers IEE5328 Prof. MJ Chen NCTU

26. Grading Taken-Home Works and Reports Only IEE5328 Prof. MJ Chen NCTU