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IEE5328 Nanodevice Transport Theory and Computational Tools

IEE5328 Nanodevice Transport Theory and Computational Tools. Lecture 1: Threshold Roll-Off, DIBL, and Subthreshold Swing. Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 27, 2013. Top Priority. Short channel effect.

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IEE5328 Nanodevice Transport Theory and Computational Tools

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  1. IEE5328 Nanodevice Transport Theory and Computational Tools Lecture 1: Threshold Roll-Off, DIBL, and Subthreshold Swing Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 27, 2013 IEE5328 Prof. MJ Chen NCTU

  2. Top Priority Short channel effect A working nanoFET must meet the two SCE criteria in advance: 1. DIBL 2. Subthreshold Swing This constitutes the so-called well-defined nanoFET. IEE5328 Prof. MJ Chen NCTU

  3. IEE5328 Prof. MJ Chen NCTU

  4. Polysilicon Gate Bulk Planar Extension • Strained Silicon Channel • Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

  5. High-k Metal Gate Bulk Planar Extension • Strained Silicon Channel • Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

  6. High-k Metal Gate FinFETs or Multi-Gate FETs TSMC 10, 14, and 16 nm TSMC 20 nm N+ P Planar Structure Vertical Structure • Strained Silicon/Germanium/GaAs Channel • Substrate/Channel Orientation • Rsd issue IEE5328 Prof. MJ Chen NCTU

  7. You may use the ITRS roadmap to • help determine a well-defined nanoFET • Or • you may want to explain how ITRS • roadmap was established IEE5328 Prof. MJ Chen NCTU

  8. High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

  9. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

  10. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

  11. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

  12. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

  13. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

  14. You have to do in this lecture: • Capture Advanced Device Physics through Lecture Notes • Read some Good Papers on the Natural Length , a universal parameter and a DIBL penetration length due to depletion from drain • Derive models and do calculations, given TCAD and/or experimental data --- Homework. • Then you can be clear about how to make or select a well-defined nanoFET. IEE5328 Prof. MJ Chen NCTU

  15. Universal Curve IEE5328 Prof. MJ Chen NCTU

  16. IEE5328 Prof. MJ Chen NCTU

  17. IEE5328 Prof. MJ Chen NCTU

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