1 / 23

ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 42, 23 Apr 14. Chp 14: Sensors Chemical ion sensors Temperature sensors Mechanical sensors. VM Ayres, ECE875, S14. Dipole layer on solution side.

abby
Download Presentation

ECE 875: Electronic Devices

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. ECE 875:Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

  2. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  3. Dipole layer on solution side + + + + + + _ _ _ _ _ _ + + + + + + So dominated by effect of dipole layer  missing the - Qf/Cox term in VFB “talks” to semiconductor at its insulator surface VM Ayres, ECE875, S14

  4. How to incorporate the changes: replacing metal gate with ion-rich solution: VM Ayres, ECE875, S14

  5. Main question is: find IDsat Hidden question is: find VT <= find VFB <= find fs ✔ ✔ ✔ VM Ayres, ECE875, S14

  6. Electron affinity: qc, Sze Appendix G EC – EF: Chp. 01, Eq’n (21) VM Ayres, ECE875, S14

  7. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  8. Semiconductor strain gauge: Readout: DR/R VM Ayres, ECE875, S14

  9. Strain S = f(R) VM Ayres, ECE875, S14

  10. Strain S  resistance R: VM Ayres, ECE875, S14

  11. Find Dl : VM Ayres, ECE875, S14

  12. Find Dl : VM Ayres, ECE875, S14

  13. Strain S  resistance R: VM Ayres, ECE875, S14

  14. Focus on DR/R: VM Ayres, ECE875, S14

  15. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  16. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  17. Focus on Dr/r / Dl /l : Cp: “longitudinal piezoresistive coefficient” VM Ayres, ECE875, S14

  18. Therefore: Strain S  resistance R: gauge factor G: VM Ayres, ECE875, S14

  19. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: Fig. 5, Chp. 14: For Si G = function (T) G is a pure #, no units VM Ayres, ECE875, S14

  20. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Sze Appendix G for Si and GaAs: Young’s modulus Y: units: pressure: GPa = force/area VM Ayres, ECE875, S14

  21. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Ioffe: Poisson’s ratio n: n is a pure #, no units For HW 09: match the Poisson’s ratio n value to the Sze Appendix G Young’s modulus VM Ayres, ECE875, S14

  22. Find what (including its symbol): VM Ayres, ECE875, S14

  23. Find what (including its symbol): Longitudinal piezoresistive coefficient Cp In Si @ 25oC = room temperature = 298 K ≈ 300 K Doping = 1020 cm-3 VM Ayres, ECE875, S14

More Related