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ACTFEL Device Modeling via SPICE. J. P. Bender and J. F. Wager Department of Electrical and Computer Engineering Center for Advanced Materials Research Oregon State University Corvallis, Oregon 97731-3211 http://www.ece.orst.edu/~jfw. Organization:. Fowler-Nordheim Diode Model
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ACTFEL Device Modeling via SPICE • J. P. Bender and J. F. Wager • Department of Electrical and Computer Engineering • Center for Advanced Materials Research • Oregon State University • Corvallis, Oregon 97731-3211 • http://www.ece.orst.edu/~jfw
Organization: • Fowler-Nordheim Diode Model • Double-sheet Charge Model
Fowler-Nordheim model: Transferred Charge Curve Fowler-Nordheim Model Experimental Data
Two-sheet Charge Model • 1. Emission Mechanisms • Field emission (pure tunneling) • Thermal emission • Trap-to-band impact ionization • 2. Charge Capture • The probability that an electron crossing a sheet of charge is captured depends on: • Electric field at the sheet • Occupancy of the sheet
Two-sheet Charge Model Space Charge Creation via Field Emission
Two-sheet Charge Model Space Charge Creation via Trap-band Impact Ionization
Two-sheet Charge Model: Static Space Charge • Ionized traps are not allowed to refill • FB= 1.5 V (experimental value) • Bulk trap depth = 1.38 V
Transferred Charge Capacitance Overshoot (Two-sheet charge model) Experimental Data Fowler-Nordheim Diode model
Conclusions • Fowler-Norheim Diode • Simple yet accurate SPICE model for devices without space charge • Two-sheet Charge Model • Demonstrates mapping of device physics to SPICE • Large amounts of C-V overshoot in SPICE