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Active Device Channel SPICE Thermal Modeling and Parameter Extraction. Fujiang Lin （林福江） linfj@ustc.edu.cn. http://mesic.ustc.edu.cn. Outline. Introduction Classification of semiconductors’ models Self-heating in semiconductor devices
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Active Device Channel SPICE Thermal Modeling and Parameter Extraction Fujiang Lin （林福江） linfj@ustc.edu.cn http://mesic.ustc.edu.cn
Outline Introduction Classification of semiconductors’ models Self-heating in semiconductor devices Impact of self-heating on the semiconductor properties Schottky Diode Thermal Model Temperature Estimation Methods Extraction methods of Schottky Diode parameters Conclusion
About the Speaker: Fujiang Lin • A special China “1000-Talents Program” USTC full Professor • Educated from USTC with BSC and MSEE in uWave • Received Dr.-Ing. (PhD in Engineering) in uE+uWave from Germany • Over 28 years hand-on experience in RF modeling cum IC validation • Singapore pioneer MMIC/RFIC/mmWIC designer and manager • Proactive IEEE SM, RFIT founder and ExCom vice Chair • Current research interests: • GaN, SiC, … modeling cum PA design • Black Phosphorus (Phosphorene) FET research • Quantum chip and brain-computing chip research • MESIC is a platform for R&D and bridge to industries
Utilization Failure of the New Nano- devices • The main reasons prolonging the utilization of the new devices are: • Low reproducibility • Deficiency of accurate modelling technique • Poor integrability
Modelling Technique as bridge between IC design and bandgap Engineering
Impact of self-heating on the semiconductor properties Measured temperature-dependent current–voltage characteristics for 9- µm single-anode varactor diode. Temperature points from 283 to 333 K with 10 K steps are used. Slice of the diode for temperature distribution in XZ plane with 5 mW input power.
Schottky Diode Thermal Model • An accurate thermal model necessary to: • Predict the device reliability; • Predict the Series (or negative) resistance. • ; (1) • , (2) • where • is the saturation current, • is the ideality factor, • is the series resistance of the diode, • V is the applied voltage, • is the junction area, • is the Richardson constant, • is Boltzmann’s constant, • is the barrier height, • is the elementary charge • is the junction temperature.
Extraction method of Schottky Diode parameters with allowance for temperature • Extraction method based on the combination of I-V and S- parameters measurement; (The temperature-sensitive parameters here is voltage) • Transient-current based method. (The temperature-sensitive parameters here is transient current)
Extraction method based on the combination of I-V and S- parameters measurement • is the elementary charge, • is the junction temperature, • is a constant, • is the series resistance, • is the difference between current model and experimental data, • is the ambient temperature, • is the dissipated power, • is the thermal resistance, • is the total diode resistance. (1) ; (2) (3) ; (4) ; (5) (6) , (7) • is the total current of the diode under test, • is the saturation current, • is the ideality factor, • is the series resistance of the diode, • V is the applied voltage, • is the junction area, • is the Richardson constant, • is Boltzmann’s constant, • is the barrier height,
Extraction method based on the combination of I-V and S- parameters measurement Series resistance values calculated using (4) and traditional extraction methods for an diode, including the lower and upper error limits showing the effect of a 30% error in the extracted value of the thermal resistance. Measured I–V characteristics and calculated I–V characteristics using traditional two-step approach and least squares curve fitting algorithms.
Transient-current based method • Advantages: • Using Current as temperature sensitive parameters; • Avoiding pulse heating; • Possibility to perform measurement at different terminals. • Time-dependent of heat transport can be described using: • , (8) • where is the thermal time constant.
