2006/3/16

1. 2006/3/16 , J- ..1 \ I J, Plasma Fusion Res. $ERIES. Vol,7 (200S) 1-2 Design and Fabrication of a DC Cylindrical Magnetron Sputtering device Mahmoud. Ghorannevissl. KiolT'.ars. Yasserianl,2.,Abbas. Anvari3. Hamidreza. Pourbalasi1, Alireza. Hojabri2. Homa. Hosseini! I Plasma Physics Research cente.; Science and Research Branch. I.A:ad University. ~O.Bo.t 14665-678. Tehran. Iran 1 Department of physics. Karaj Branch. l.A:ad University. Iran ) Department ofphysics. Sharif University of Techn%g.v. Iran (Received: S October 2004/ Accepted: 8 February 2006) Abstract A dc cylindrical magnetron sputtering device is designed and its characteristics are studied. ,The device consists of two copper cylinders with 1.5 and 5 cm in radius and 20 cm in length. A magnetic coil mounted around the outer cylinder generates an a.~ial magnetic field up to 550 G. The effect of different magnetic field on the ionization rate of the discharge is observed. It is shown that the electrical behaviour of the discharge strongly depends on the values of the magnetic field and shows an optimum value at which the power absorbed by the plasma is maximum. The effect of different pressure on the ionization rate is also studied and the results are reported. Keywords: magnetron. glow discharge, sputtering. thin film. conductance of thin film 1. Introduction e and magnetic fields are studied and optimum values for Deposition of thin films may be achieved by the fol- these parameters are obtained. lowing methods. Reactive thermal evaporation deposition. RF & DC 2. Experimental set up magnetron sputtering. electron beam evaporation. ion- In Fig. I the schematic view of the system is pre- assisted deposition techniques. electroless chemical- growth techniques. spray pyrolysis. chemical vapor de- position. vacuum evaporation and laser-assisted deposi- Cathode tion techniques [I]. Anode Sputtering techniques are commonly used to deposit metal thin film on insulating and conducting substrates. The growth parameters. such as thickness or thin film Substrate and sputtering power usually play significant roles in governing the properties or metal films [2]. Plasma sources are nowadays widely used for sput- tering and film deposition application [2. 3J. A dc mag- t netron sputtering device plasma is essentially a glow I discharge produced between two cylindrical electrodes 0 -cm as anode and cathode. A magnetic coil located outside the cylinders creates a field con~guration acting as a j magnetic trap ror the electrons [4]. which typically h;1ve a temperature or a rew eV. A strong ionization source is thus produced in the region located at the rront of the I cathode. The ions created in this region are accelerated --lO cm- towards the cathode. causing sputtering from its sur- F' ..., -Ig. 1 Schematic of the customized' system (coaxial DC lace. In thIs paper variatIons or voltage and current 01 magnetron spunering device), :l a dc magnetron sputtering device for various pressures '[ ~200S by The Japan Societyof Plasm, Corre'ponding a.rhor', eom-til:k;'nsserian@\ahoo.com Scienceand :-'-uclear Fusion Research I