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2004 년 한국물리학회 가을 학술 논문 발표회. A theoretical suggestion to make real clean material surface. Sooyeon Yoon and Yup Kim Kyung Hee Univ. Dept. of Phys. Abstract. 1. 2004 년 한국물리학회 가을 학술 논문 발표회. Abstract. We study a dynamical scaling property of real two dimensional surface
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2004년 한국물리학회 가을 학술 논문 발표회 A theoretical suggestion to make real clean material surface Sooyeon Yoon and Yup Kim Kyung Hee Univ. Dept. of Phys.
Abstract 1 2004년 한국물리학회 가을 학술 논문 발표회 Abstract We study a dynamical scaling property of real two dimensional surface eroded from the rough surface by an external particle which does biased random walk. We first prepare the rough surfaces by use of several growth methods, i.e., the random deposition, the restricted solid-on-solid (RSOS) model, and conserved RSOS model. We first show that the roughness of surfaces eroded by unbiased random walking particles in three dimensional space eventually reaches within mono-layer thickness. We also found that the dynamical scaling property of the surface satisfies the scaling ansatz W~f(t/Lz) with the dynamical exponent z=1. When the attractive bias exists, the surface roughness increases logarithmically with size.
Motivation of this study 2 2004년 한국물리학회 가을 학술 논문 발표회 Motivation of this study Theoretical base Surface evolution models with z = 1 Biased-Diffusion-Limited-Erosion (PRE 66, 031105 (2002)) Time-Reversed Dielectric Breakdown Model (PRE 67, 05611(2003)) Surface Growth Model with a Random walk like Nonlocality (PRE 68, 036221 (2003))
Motivation of this study 3 2004년 한국물리학회 가을 학술 논문 발표회 white noise DLE Model and TDBM (Dynamical Scaling Law :z= 1) BDLE Model (Dynamical Scaling Law :z= 2)
Motivation of this study 4 2004년 한국물리학회 가을 학술 논문 발표회 Experimental base Plasma-surface interaction : A flux of ions emerges from the plasma and a thin film is being etched by accommodation of incident ions on a substrate. (Progress in Surface Science 76, 21 (2004)) Chemical etching : Boiling silicon wafer in an HCL/H2O2 or NH4OH/H2O2 solution (RCA review 31, 187 (1970)) Electropolishing : Electrochemical etching of silicon in hydrofluoride containing eletrolytes leads. (PRE 64, 031604 (2001, theoretical base))
Model 5 z x y Pb 2004년 한국물리학회 가을 학술 논문 발표회 Model 2-dimensional L x L substrate, 1. First make a rough surface(material) with restricted solid-on-solid method, random de- position method. 2. Choose randomly one site (x,y,z) at the starting plane. A particle does the biased random walk with down probability Pb in the empty space. 3. If the particle gets to the killing plane, the new one is started from the other randomly selected site among the starting plane. Otherwise, if the particle reaches the nearest neighbor of the rough surface, the incident particle and material particle are removed together. ※ If the sites which the incident particle is located are more two, randomly select one of them. Killing plane zk Starting plane zmax L
Results 6 2004년 한국물리학회 가을 학술 논문 발표회 Results 1-1. Restricted solid-on-solid(RSOS) type growth & Down probability,Pb=1/6
Results 7 2004년 한국물리학회 가을 학술 논문 발표회 Morphology change of RSOS surface t = t = 0
Results 8 2004년 한국물리학회 가을 학술 논문 발표회 1-2. Restricted solid-on-solid(RSOS) type growth & Down probability, Pb=1 Scaling collapse withz=2
Results 9 2004년 한국물리학회 가을 학술 논문 발표회 ※ Confirm of 2D BDLE ( Pb = 1) Erosion is started from the flat surface ( h = 0 ) Dynamic exponent ,z = 2
Results 10 2004년 한국물리학회 가을 학술 논문 발표회 2-1. Random deposition(RD) type growth & Down probability, Pb=1/6
Results 11 2004년 한국물리학회 가을 학술 논문 발표회 2-2. Random deposition(RD) type growth & Down probability, Pb=1
Conclusions & Discussions 12 2004년 한국물리학회 가을 학술 논문 발표회 Conclusions & Discussions • We study a dynamical scaling property of two dimensional surface • eroded from the rough surface by (biased) random walking particles. • 1. RSOS type surface eroded by unbiased random walking particles (Pb=1/6) • 2. RD type surface eroded by unbiased random walking particles (Pb=1/6) • ?? • 3. The attractive bias exists (Pb=1), the surface roughness increases • logarithmically with size.