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New Product Introduction: 1Mb Quad SPI nvSRAM

This new product introduction highlights the benefits of Cypress's 1Mb Quad SPI nvSRAM, a high-speed nonvolatile RAM solution that eliminates the need for batteries and reduces pin count while maintaining excellent performance. Ideal for computing, networking, industrial automation, and RAID storage applications.

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New Product Introduction: 1Mb Quad SPI nvSRAM

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  1. New Product Introduction: 1Mb Quad SPI nvSRAM Eliminate Batteries and Reduce Pin Count While Maintaining High-Speed Nonvolatile RAM Performance 1Mb Quad SPI nvSRAM New Product Introduction

  2. Demand for Reliability and PerformanceIs Driving Nonvolatile RAM Growth • The Global TAM1 forecast for Nonvolatile RAM (NVRAM) is $590M in 20142 with a 10% CAGR through 2018 • Cypress’s 1Mb Quad SPI3 nvSRAM applications include: • Computing and networking • Industrial automation • RAID storage • These applications use high-performance systems that require instant, high-reliability data capture on power loss • These systems need the data throughput performance of high-speed parallel NVRAMs and the reduced pin count of Quad SPI interfaces preferred by designers • Customers that buy these systems prefer battery-free NVRAM solutions • Current NVRAM solutions, such as Battery-Backed SRAM, cannot meet all of these requirements • Take advantage of the industry shift from parallel Battery-Backed SRAM to Quad SPI NVRAM • 1 Total Available Market • 2 Web-Feet Research, Cypress Semiconductor research • 3 Quad Serial Peripheral Interface 1Mb Quad SPI nvSRAM New Product Introduction 3a

  3. Cypress: No. 1 in NOR Flash, SRAM, NVRAMComparison to Competitors’ Memory Product Portfolios Cypress has the broadest portfolio of high-performance memories for embedded systems 1 A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR Flash Memory with one-third the number of pins of parallel NOR Flash Memory 2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM 5 Nonvolatile SRAM 6 Nonvolatile memory that provides direct access to read and write to any memory location in any random order 7 A Cypress brand name 3b

  4. Terms You Will Hear Today Nonvolatile Memory (NVM) Memory that retains data on power loss Nonvolatile Random-Access Memory (NVRAM) An NVM that allows direct access to stored data in any random order Write Endurance The number of times an NVM cell can be rewritten before it wears out Silicon Oxide Nitride Oxide Silicon (SONOS) A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell Nonvolatile Static Random-Access Memory (nvSRAM) Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss Quad Serial Peripheral Interface (Quad SPI) A high-speed interface that combines four individual SPI channels to increase serial bus throughput Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data Battery-Backed SRAM (BBSRAM) SRAM memory connected to a battery to retain data on power loss Restriction of Hazardous Substances (RoHS) A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components Redundant Array of Independent Disks (RAID) A storage technology that uses two or more disk drives for redundancy 1Mb Quad SPI nvSRAM New Product Introduction 4

  5. High-Speed NVM Design Problems • 1. Many systems require fast NVMs with high Write Endurance • Traditional EEPROM and flash NVMs have slow write times (>1 ms) and limited Write Endurance • Low-power asynchronous SRAMs have fast access times but require battery backup to store data on power loss • Most NVRAMs do not offer a 16-pin serial interface with enough performance to match a 44-pin high-speed parallel interface • 2. BBSRAM solutions force undesirable tradeoffs • Batteries consume board space and require a power-management controller, increasing system cost and complexity • Coin-cell batteries have a three-year lifetime, which adds cost by requiring system maintenance and downtime • After a power outage, data is lost if the battery is drained before power is restored, so repairs must be made quickly • Batteries contain heavy metals that violate RoHS regulations • 3. Many systems require accurate time-stamping • Accurate external real-time clock chips, used to time-stamp data, add cost and complexity • Cypress’s 1Mb Quad SPI nvSRAM solves all these problems • Provides ≥24MBps random read/write access time with unlimited Write Endurance • Offers a 16-pin Quad SPI interface with a 108-MHz clock rate, exceeding the throughput of a 44-pin x16, 40-ns parallel interface • Stores data reliably on power loss without batteries, even in magnetic fields • Eliminates the need for an external power-management controller • Offers an integrated, high-accuracy, real-time clock option Cypress’s 1Mb Quad SPI nvSRAM simplifies your design by eliminating batteries and reducing pin count 1Mb Quad SPI nvSRAM New Product Introduction 5

  6. Quad SPI nvSRAM Is a Better Solution Simplify a complex BBSRAM-based design… By choosing a Quad SPI nvSRAM as your NVM solution… To produce a high-speed, high-reliability serial NVRAM solutionfor a mission-critical application. Low-power asynchronous SRAM Computing and Networking Industrial Automation RAID Storage Battery required to store data on power loss Quad SPI nvSRAM solution with integrated RTC Extra board space for battery 1Mb Quad SPI nvSRAM New Product Introduction 6

  7. Cypress 1Mb Quad SPI NVRAM Solution vs. Competition’s 1 Magnetoresistive Random Access Memory that uses magnetic elements to store data 2 Fully random read or write in 4-byte burst 3 Full 1Mb memory burst write or read 4 Pins required to connect to an MCU 5 No direct comparison due to interface differences; this SRAM part consumes 8 mA at 22 MHz 6 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 1Mb Quad SPI nvSRAM New Product Introduction 7

  8. nvSRAM PortfolioHigh Density | High Speed CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI3 1.0 x8, x16; Ind1 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind1 RTC2 Higher Densities DDRx6nvSRAM NDA Required Contact Sales Higher Densities QSPI5nvSRAM NDA Required Contact Sales CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 512Kb - 16Mb CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7; RTC2 CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7 NEW NEW CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B101I 1Mb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind1RTC2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512I 512Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind1 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind1 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil4 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind1RTC2 CY14B256I 256Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 64Kb - 256Kb STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B064I 64Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 Production Sampling Development Concept Status 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate 7 Extended Industrial grade −40ºC to +105ºC 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Availability QQYY QQYY 10

  9. 1Mb Quad SPI nvSRAM Applications Block Diagram Computing and networking Industrial automation RAID storage VCAP2 1Mb Quad SPI nvSRAM Power Control SONOS Array Store Control Logic SRAM Array 2 Control Store/Recall Control Features Quad SPI interface: 108 MHz Unlimited Write Endurance One million store cycles on power fail Data retention of 20 years at 85°C Operating voltages: 3.0 V, 1.8-V I/O Low standby (280-µA) and sleep (10-µA) currents Industrial temperature range: -40°C to +85°C Extended Industrial temperature range: -40°C to +105°C Integrated, high-accuracy real-time clock (RTC) Package: 16-SOIC, 24-BGA 4 I/O Control QSPI I/Os Recall Software Command Detect RTC XIN1 XOUT1 VRTC HSB3 Availability Collateral Preliminary Datasheet: Contact Sales Sampling: Q3 2015 Production: Q4 2015 1 Crystal connections 2 External capacitor connection 3Hardware store busy 1Mb Quad SPI nvSRAM New Product Introduction 11

  10. Here’s How to Get Started • Download our App Notes: Cypress Nonvolatile Products App Notes • Register to access online technical support • Request an advance datasheet: Contact Sales RAID Cardby LSI Logic Programmable Logic Controller by Keyence Routerby Cisco 1Mb Quad SPI nvSRAM New Product Introduction 12

  11. APPENDIX 1Mb Quad SPI nvSRAM New Product Introduction 15

  12. nvSRAM Product Selector Guide 1Mb QPSI nvSRAM Part Numbering Decoder CY14V101QS – SF108XI Temperature Range: I = Industrial, Q = Ext. Industrial Pb Content: X = Pb-free Frequency: 108 = 108 MHz Package: SF = 16-SOIC Standard; SE = 16-SOIC Custom; BK = 24-BGA Interface: QS = Quad SPI; PS = Quad SPI with RTC Density: 101 = 1Mb nvSRAM Voltage: V = 3.0 V, 1.8 V I/O Marketing Code: 14 = nvSRAM Company ID: CY = Cypress 1Mb Quad SPI nvSRAM New Product Introduction 16

  13. References and Links Video: nvSRAM Basics Video nvSRAM datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM, 16Mb nvSRAM (Preliminary) nvSRAM w/ONFI datasheet: 16Mb nvSRAM (Preliminary) nvSRAM w/Real-Time Clock datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM, 16Mb nvSRAM (Preliminary) App Note: Comparison Between nvSRAM and BBSRAMs App Note: Replacing 4Mbit (256K x16) MRAM with Cypress nvSRAM App Note: nvSRAM with RTC Design Guidelines Website: Cypress Parallel nvSRAMs nvSRAM Product Selector Guide: nvSRAM Product Selector Guide Product roadmap: Cypress Nonvolatile RAM 1Mb Quad SPI nvSRAM New Product Introduction 18

  14. $1.64 $2.12 $4.01 $6.13 -$0.22 $9.09 $0.12 $8.99 $16.76 1Mb QSPI nvSRAM Solution Value Competitor1Mb low-power SRAM: ISSI IS62WV1288DBLL Price: $1.641BOM IntegrationBattery + casing: Panasonic CR2477 battery + Memory Protection Devices Inc. BH1000G-ND casing Price: $2.121Power management controller: Maxim MXD1210ESA Price: $4.012Additional Value22-µF external capacitor: Panasonic ECS-F0JE2262B Price: -$0.221Field battery replacement cost Price: $9.093Board space saving Value Added: $0.124 Competitor Battery + Casing Power Management Controller BOM Integration Value 22-µF External Capacitor Field Battery Replacement Cost Board Space Saving Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 52% Total Savings: CY14V101QS-SF108XI $7.985 $8.78 1 Digikey website 1ku pricing on 08/07/2014 2 Mouser website 1ku pricing on 08/07/2014 3 $4.92 (four times in 15 years at $1.23 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time conservatively estimated at 75 seconds/battery) 4 12.25 square centimeters at $0.01 per square centimeter 5 1ku web pricing on Cypress.com 1Mb Quad SPI nvSRAM New Product Introduction 19

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