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Introduction to ISDE

Introduction to ISDE. Lloyd Massengill Institute for Space and Defense Electronics Vanderbilt University Nashville, Tennessee, USA, 37235. Vanderbilt University Home of the Commodores (and the Radiation Effects Research Group and ISDE). Located in Nashville, TN Private Institution

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Introduction to ISDE

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  1. Introduction to ISDE Lloyd Massengill Institute for Space and Defense Electronics Vanderbilt University Nashville, Tennessee, USA, 37235

  2. Vanderbilt UniversityHome of the Commodores (and the Radiation Effects Research Group and ISDE) • Located in Nashville, TN • Private Institution • ~11,000 students • Undergraduate: 6,532 • Graduate/professional: 5,315 • School of Engineering: 1,305 • Engineering, Arts & Sciences, Medicine, Nursing, Law, Business, Education, Music, Divinity • Degrees in 2007 • Baccalaureate: 1,468 • MS: 1,062 • PhD: 498

  3. Vanderbilt Radiation Effects Program World’s largest university-based radiation effects program • 30 graduate students • A few undergraduate students • Open access • Basic research and support of ISDE engineering tasks • Training ground for rad-effects engineers Radiation Effects Research (RER) Group Institute for Space and Defense Electronics (ISDE) • 14 full time engineers • 2 support staff • ITAR compliant • Support specific radiation effects engineering needs in government and industry • 10 faculty with extensive expertise in radiation-effects • Beowulf supercomputing cluster • Custom software codes • EDA tools from multiple commercial vendors • Multi-million $ aggregate annual funding • Test and characterization capabilities and partnerships

  4. DTRA-supported Grad Student “Product” Examples • > 25 peer-reviewed publications in 2007 under DTRA/RHM support • > 35 presentations in 2007 under DTRA/RHM support • 13 presentations accepted for IEEE NSREC 2008 with DTRA/RHM credit line • >8 DTRA-supported graduate student degrees awarded last two years

  5. What is ISDE? ISDE is a contract engineering unit of Vanderbilt University created to bring world-class support of space and DoD mission needs through radiation effects analysis and rad-hard design ISDE brings several decades of “academic” resources/expertise and “real-world” engineering to bear on system-driven needs ISDE provides: • Government and industry radiation-effects resource • Modeling and simulation: RHTCAD, RHEDA • Design support: radiation models, RHBD • Technology support: assessment, characterization • System support: systems engineering • Flexible staffing driven by project needs • Faculty • Graduate students • Professional engineering staff ISDE Particulars: • Established as a unit of Vanderbilt University: 1 Jan 2003 • Academic staff: 10 faculty / ~30 graduate students • Full-time engineering staff: 14 • Support staff: 2

  6. ISDE Capabilities • Support the design and analysis of radiation-hardened electronics • Supply radiation effects models, design tools, and simulation services • Provide engineering services for technology insertion and transfer • Develop radiation hardness assurance test methods • Address system-specific problems related to radiation effects • Provide training to the community • Retain a radiation effect “SWAT” team • Reality training for future radiation effects “experts” (aka grad students)

  7. Sampling of Current Projects • U.S. Navy Trident II Life Extension (Draper prime) • Honeywell SOI-IV, TI BiCom 1.5, and Intersil EBHF technologies • DTRA Radiation Hardened Microelectronics • IBM 9SF 90nm, TI 65 nm • DARPA/DTRA Radiation Hardened by Design (Boeing prime) • IBM 8SF 130nm and 9SF 90 nm CMOS – Trusted Foundry • NASA Electronic Parts & Packaging Program (NASA/GSFC) • IBM: 5HP, 8HP, 9SF 90nm, TI: 65 nm, 45 nm • NASA Extreme Environment Electronics (Ga Tech prime) • IBM 5AM SiGe and BAE 150 nm CMOS • CREME Monte Carlo (NASA MSFC/RHESE) • Aging of Electronics (U.S. Navy DTO/Lockheed-Martin) • U.S. Air Force Minuteman Technology Readiness • BAE SEU-Hardened SRAMs (BAE prime) • SEE Charge Collection Signatures at 90nm (and below) (ANT/IBM prime) • Virtual Irradiation Simulator Development (Air Force/AEDC/PKP) • Integrated Multi-scale Modeling of Molecular Computing Devices (DOE) • Substrate Charge Collection Studies (MEMC) • CFDRC TCAD Tool Development (DTRA SBIR and NASA STTR) • Lynguent Compact Model Development (DTRA SBIR) • SEU Analysis (Medtronic) • GaN HEMT/amplifier simulation (Lockheed Martin) • Radiation Effects on Emerging Electronic Materials and Devices (AFOSR/MURI) • Design for Reliability Initiative for Future Technologies (AFOSR/MURI through UCSB) • DTRA Basis Research Efforts (three 6-1 grants)

  8. USN D5LE Modeling Activities • AMS- Custom Development • PDK Development • EBHF – 5 Design-fab-eval cycles supported • SOI-IV – 5 Design-fab-eval cycles supported • Bicom 1.5 – 2 Design-fab-eval cycles supported • Digital • IBIS • Standard Cell library validation • SSI –SOI-IV & SOI-V • Discrete • Actives • Passives • New Electrical Model Creation • Magamp • Power MOSFET • Design Community Support (remote & local) • Bugzilla – over 90 bugs reported, analyzed, & closed • App-notes • Model inventory • Tutorials • Designer Interface meetings

  9. USN D5LE Model Completion Summary • 937 model files tested/calibrated/delivered to NEPL database • 757 of these are ISDE custom developed and calibrated • Over 100-million calibration simulations performed • Significant support, training, design, simulation activities

  10. USN D5LE Model Completion Summary A few milestones: • 45 major model releases/updates since Jan 2006 • Complete PDK radiation models for EBHF, SOI-IV, BiCom • Complete electrical, dose-rate, and degraded / corner models for all accepted program parts • Degraded parameter guide and corner models released • PCIC macro, micro, design, simulation support – identified a feedback path design enhancement to correct out-of-spec recovery time • Enhanced macro models to include high-fidelity transient response (based on user request) • New MOSFET electrical models developed to the fill vendor gaps • Developed and designed 8 test chips for program model calibration and verification • Implemented an online community model support and feedback process • Model training and designer interface meetings • General ELDO training and aid

  11. The Vandy to ISDE Connection Vanderbilt has a comprehensive radiation effects analysis program to support DOD and commercial needs • Physics investigations – NASA/GSFC, NASA/MSFC, AFOSR MURI, DTRA 6.1 support – Vandy academic • Response mechanisms investigations – DTRA RHM, NASA, Navy support – Vandy academic / ISDE • RHBD development – DARPA RHBD and DTRA RHM support – ISDE

  12. “Applied” Side of the Single Event Program Through DTRA, DARPA, and NASA support, Vanderbilt has been investigating single-event mechanisms, circuit responses, hardening techniques, and rad-hard design from submicron to sub-100nm IC technology nodes General Observations: • Moore’s law complicates the testing, simulation, and analysis of all radiation effects, especially single-events and soft error-rates • The 250nm technology node was a watershed for the microelectronics reliability community (especially those ‘radiation-concerned’). At 100-nm scale: • Circuits that “should” be SEE hard are proving not to be • Commercial ICs are showing alarming vulnerabilities to ground-based SEE environments • Unexpected SEE vulnerabilities (e.g. protons) have appeared Why? • Single events can no longer be considered localized, time-isolated, average energy phenomena • The ‘region of influence’ of an ion strike extends far beyond a single circuit ‘bit’ - spatially, logically, and temporally

  13. “Applied” Side of the Single Event Program Through DTRA, DARPA, and NASA support, Vanderbilt has been investigating single-event mechanisms, circuit responses, hardening techniques, and rad-hard design from submicron to sub-100nm IC technology nodes General Observations: • Moore’s law complicates the testing, simulation, and analysis of all radiation effects, especially single-events and soft error-rates • The 250nm technology node was a watershed for the microelectronics reliability community (especially those ‘radiation-concerned’). At 100-nm scale: • Circuits that “should” be SEE hard are proving not to be • Commercial ICs are showing alarming vulnerabilities to ground-based SEE environments • Unexpected SEE vulnerabilities (e.g. protons) have appeared Why? • Single events can no longer be considered localized, time-isolated, average energy phenomena • The ‘region of influence’ of an ion strike extends far beyond a single circuit ‘bit’ - spatially, logically, and temporally Heuristic approaches to IC hardening are failing Failure (upset rate) predictions are failing Comprehensive radiation effects modeling, incorporating a priori physics, is an essential part of mission-critical hardness assurance

  14. Example of VU Basic Research to ISDE Application to Community Tech Transfer:A “Real World” Problem 60deg, longitudinal to rails 60deg, orthogonal to rails Cross Section (cm2) LET (MeV/mg/cm2) • Baze broadbeam testing (Feb 07) revealed: 90nm RHBD DICE latches are hyper-sensitive to longitudinal-axis angular SE strikes • Upset saturated cross-sections approach unhardened designs • Results do not follow conventional cos() charge collection rules

  15. “Real World” Issue Issue: • Boeing RHBD Phase 1.5 90nm DICE V1 latch did not meet SEE on-orbit error-rate goals (< 1E-10 E/BD) based on broadbeam error data and CREME96 rate calculations Cause: • Phase 1.5 TCAD research work identified charge sharing as error mechanism Complication: • CREME96 (and other space error-rate codes) • do not properly handle layout-dependent effects (e.g. charge sharing) and • can significantly mis-predict error rates (by orders of magnitude) • Therefore: unclear if DICE V1 or V2 on-orbit error rates, calculated for RHBD, are accurate or dubious predictions

  16. Resolution Strategy VU “basic research” tools: • Vanderbilt-ISDE has performed comprehensive TCAD analysis of SEE mechanisms in sub-100nm technologies: uncovered the importance of charge sharing identified critical circuit node pairs (supported in part by DTRA/RHM, DARPA RHBD, NRL Albany Nanotech) • Vanderbilt-ISDE has developed a Monte-Carlo-based error-rate modeling technique that • operates from first principles physics for ion energy deposition – “virtual irradiation” • does not apply conventional error-rate assumptions • (supported in part by NASA/GSFC and DTRA) Task Plan: • Vanderbilt-ISDE was asked by the RHBD program to apply this technique to the Phase 1.5 90nm DICE V2 latch in order to calculate a more accurate on-orbit error-rate expectation

  17. Mixed-Mode TCAD DICE Setup • Calibrated 620/80 PMOS devices constructed in TCAD using ISDE physical description of the IBM 9SF FEOL technology • Calibrated 280/80 NMOS BSIM3 devices constructed in DESSIS-SPICE for pull-down loading

  18. MRED Solid Modeling Component Setup • The solid model serves as the foundation for the radiation transport and calorimetry component of the analysis • Use GDSII layout information to generate an extruded model of the 9SF Latch • Each layer is assigned an accurate compositional description – chemical stoichiometry and density Substrate, Active, and Poly Only Substrate, Metallization, and Passivation Shown

  19. MRED/SPICE Interface • This project required the first application of the MRED-Spice coupling concept. • For each particle that strikes a sensitive volume, a Spice simulation is launched. • Each transistor’s collected charge is converted to a current pulse and directed to the appropriate node during run-time. Irradiate FF1 at a random time and watch for an upset clocked out of FF2. This process was repeated over 100,000 times for the final simulation set.

  20. Calibration to Broadbeam Data • Best agreement between model and experiment is with the highest cross sections and lowest LET – rate dominating

  21. SEU Rate Prediction • To perform the rate prediction, the beam-calibrated model is modified to: • Mimic the isotropic environment and sample appropriately from each spectrum (z=1,z=2,z=3,etc.) • Events are weighted to the relative abundance in the overall spectrum. This methodology has been tested extensively and proven valid. • The calculated rate is 1.7 +/- 0.2 x 10-8 error/bit-day (the error bar is due to counting uncertainty only) • Most errors occurred at grazing incidence ( >60 degrees ) • Began observing errors regularly around Z = 12 (Mg, max LET  10 MeV-cm2/mg) Tech Transfer: • Based on Vandy analyses, improved V3 DICE latches have been designed and fabbed by Boeing as part of the RHBD Phase 2.0 program • Results on charge sharing, angular effects, well collapse, and MRED upset rate modeling have been briefed to the community at NSREC, IRPS, GOMAC…

  22. The “Big Picture”

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