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低維奈米結構研究:合成、鑑定、應用與基本成長機制 ( Investigations on low-dimensional nanostructures: synthesis, characterization, applications and fundamental mechanisms ). Li-Jen Chou ( 周立人 ). Department of Materials Science and Engineering National Tsing Hua University, Hsinchu, Taiwan. 各教師成長不同奈米結構材料
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低維奈米結構研究:合成、鑑定、應用與基本成長機制低維奈米結構研究:合成、鑑定、應用與基本成長機制 (Investigations on low-dimensional nanostructures: synthesis, characterization, applications and fundamental mechanisms) Li-Jen Chou (周立人) Department of Materials Science and Engineering National Tsing Hua University, Hsinchu, Taiwan
各教師成長不同奈米結構材料 陳力俊: 超高真空穿透式電子顯微鏡觀測 果尚志: 多重尺度及階層式的組裝及量測 呂世源: 表面功能化處理 周立人: 場發射穿透式電子顯微鏡觀測 徐文光: 機械性質量測 嚴大任: 電子束微影與微光學量測 Team Members
96年執行情形 Publication 陳力俊、果尚志、呂世源 周立人、徐文光、嚴大任 s: Impact No. (No. Papers) PI 1: ~10 (3), ~8 (2), ~6 (1), ~4 (7) PI 2: ~ 4 (13) PI 3: ~ 6 (1), ~5(1), ~4 (2) PI 4: ~10 (2), ~8 (2), ~6 (2), ~4 (2) PI 5: ~ 4 (4) Nano Lett. (~10), Adv. Mater. (~8), Small (~6), Chem. Mater. (~5), J. Mater. Chem. Appl. Phys. Lett. (~4)
97年執行情形 Publications: Impact No. (No. Papers) PI 1: ~ 26 (1), ~10 (3), ~8 (3), ~4 (2) , > 3.5 (2) PI 2: ~ >7 (2), >5 (2), > 3.5 (7) PI 3: ~ >8 (1), >6 (1), ~5(2), ~4 (2), > 3.5 (3) PI 4: ~ 10 (3), ~4 (2) , ~ 3.5 (1) PI 5: ~ 4 (1), ~ 3.5 (4) PI 6: ~ 8 (1) , ~ 4 (1) Science (~26),Nano Lett. (~10), Adv. Mater. (~8), Small (~6), Chem. Mater. (~5), J. Mater. Chem. (~4), Appl. Phys. Lett. (~3.5)
國際合作、校外合作、產學合作 • Prof. Z.L. Wang (Gatech, USA) • Profs. K.N. Tu, Y. Hwang (UCLA, USA) • Prof. D. Shindo (Tohoku Univ. Japan) • Prof. S. Isoda (Kyoto Univ. Japan) • Profs. M. Aono, Y. Bando, (NIMS, Japan)
Observation of Atomic Diffusion at Twin-modified Grain Boundaries in Copper
“In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si,” Nano Letters 8, 2194 (2008).
”Elastic Properties and Buckling of Silicon Nanowires,” (a) (b) (c) (g) Pcr L0 L (h) L a (d) (e) (f) d R (µm) 3µm Adv. Mater. 20 , 3919 (2008)
Formation and Characterization of NixInAs/InAs Nanowire Heterostructures Nano Letters, Vol. 8, No. 12, p 4528 - 4533, (2008).
Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN for Nitride Based Logic Nanodevices Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008).
Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires Nano Letters, Vol. 8, No. 10, p 3081 - 3085, (2008).
群體耦合式電漿光學響應(近場耦合) 自組裝金奈米粒子超晶格(晶格常數可調) Tunable Plasmonic Response from Alkanethiolate-Stabilized Gold Nanoparticle Superlattices: Evidence of Near-Field Coupling J. Am. Chem. Soc. (Communication) 2008, 130, 824−826
Comparison of Ni-Si and Co-Si systems Y.C. Chou et al. Nano Lett. 9 (in press, 2009)
M.P. Lu et al. “Piezoelectric Nanogenerator using p-type ZnO Nanowire Arrays,” Nano Lett. 9, 1223 (2009)
In-situ Observation of Complex Nanowires Results and Discussion Figure 7.4 (a-c) A sequence of TEM images of the Au-Ga2O3 core-shell nanowires transform into Au-peapodded Ga2O3 nanowires heated at 1000 ℃ in the in-situ TEM.
Nano-Photonic Switch Surface Plasmon Resonance (SPR )of Metal Nanoparticles Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008).
Green Light Red Light Turn on Turn on Experimental Procedures Procedures In our case, an electric potential hologram was acquired by the electron holography under the illumination of the green and red lasers.
(b) (a) (a) (a) Figure (a) and (b) are the electron hologram and reconstructed phase image under the illumination of 532 nm laser. The phase shift is mostly due to the mean field potential.
High Electric Potential Area The phase shift image (right figure) due to the LSPR effect (under green light) is deduced. We assume that these bright spots is due to the excited state of the electrons.
The phase shift due to the excited electrons is not obvious under the illumination of red light, which is consistent with the LSPR theory.