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EE130/230A Discussion 4

EE130/230A Discussion 4. Peng Zheng. Illumination of a Semiconductor with Light. (Refer to Discussion 3.). EE130/230A Fall 2013. Schottky Contact Energy Band Diagrams :. EE130/230A Fall 2013. Ideal M-S Contact: F M > F S , n-type. Band diagram instantly after contact formation:.

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EE130/230A Discussion 4

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  1. EE130/230A Discussion 4 PengZheng

  2. Illumination of a Semiconductor with Light (Refer to Discussion 3.) EE130/230A Fall 2013

  3. SchottkyContact Energy Band Diagrams: EE130/230A Fall 2013

  4. Ideal M-S Contact: FM >FS, n-type Band diagram instantly after contact formation: qVbi = FBn– (Ec – EF)FB Equilibrium band diagram: n Schottky Barrier Height: W EE130/230A Fall 2013

  5. Ideal M-S Contact: FM <FS, n-type Band diagram instantly after contact formation: Equilibrium band diagram: EE130/230A Fall 2013

  6. Ideal M-S Contact: FM <FS, p-type p-type semiconductor Band diagram instantly after contact formation: Equilibrium band diagram: Schottky Barrier Height: FBp qVbi = FBp– (EF – Ev)FB W EE130/230A Fall 2013

  7. Ideal M-S Contact: FM >FS, p-type p-type semiconductor Band diagram instantly after contact formation: Equilibrium band diagram: EE130/230A Fall 2013

  8. Summary Ec Ec EF EF Ev Ev Ec EF EF Ev Ev R.F. Pierret, Semiconductor Fundamentals, p. 481 For rectifying contacts: small-signal capacitance EE130/230A Fall 2013

  9. SchottkyContact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=0V EE130/230A Fall 2013

  10. M p-type Si Eo cSi=4.05 eV FM=4.77 eV Ec EF 0.195 eV 0.4eV=FBp Ev qVbi = FBp– (EF – Ev)FB W 0.52 μm SchottkyContact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=0V EE130/230A Fall 2013

  11. SchottkyContact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=-0.2V EE130/230A Fall 2013

  12. Using C-V Data to Determine FB OnceVbi and NAare known, FBpcan be determined: EE130/230A Fall 2013

  13. Good luck to Quiz 1

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