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CAREER:Spectroscopy of InAs /GaAs Quantum Dot Solar Cells Seth Hubbard, Rochester Institute of Tech, DMR 0955752

CAREER:Spectroscopy of InAs /GaAs Quantum Dot Solar Cells Seth Hubbard, Rochester Institute of Tech, DMR 0955752. The InAs /GaAs quantum dot (QD) system has been shown by the RIT team to improve solar cell short circuit current.

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CAREER:Spectroscopy of InAs /GaAs Quantum Dot Solar Cells Seth Hubbard, Rochester Institute of Tech, DMR 0955752

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  1. CAREER:Spectroscopy of InAs/GaAs Quantum Dot Solar Cells Seth Hubbard, Rochester Institute of Tech, DMR 0955752 The InAs/GaAs quantum dot (QD) system has been shown by the RIT team to improve solar cell short circuit current. Study of the energy levels and carrier recombination rate is important for successful function of QD nanostructured devices. Temperature dependent optical spectroscopy and deep level transient spectroscopy were performed to extract both the energy levels and non-radiative deep levels for multiple quantum dot stacks as a function of QD size. Results gave precise information as to the InAs coverage needed for longer radiative lifetime and favorable quantum confined energy bands. These results are helping to improve growth of high quality QDs and increase the number of electrons converted to current (i.e. efficiency) in QD solar cells. Chris Bailey, Seth Hubbard, 35th IEEE Photovoltaic Conference, 2010. Joanne Okvath, Seth Hubbard, Applied Physics Letters, submitted Oct. 2010. Atomic Force Micrograph of InAs QD used in this study Generation-Recombination model used for QD Energy levels extracted as a function of InAs coverage (QD size).

  2. Fabrication and Characterization of Nanostructured Solar Cells Seth Hubbard, Rochester Institute of Tech, DMR 0955752 Undergraduate summer research programs allowed students to work with both the PI and his graduate students. Two summer undergraduate students (Mitch Bennett and Adam Podell) took GaAs solar cells from initial growth by CVD at NASA, through fabrication in the RIT nanofabrication facility and final testing at both RIT and NASA Glenn research center. The goal of the project was to compare the material and device properties of solar cells with and without quantum nanostructures. Shown in the top picture, M.S. student Chelsea Plourde trains a student in the RIT nanofabrication facility. In the bottom picture, M.S. student Joanne Okvath installs QD samples for DLTS measurements. Joanne has completed her degree in EE and is now working for Fairchild Semiconductor.

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