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Thermal Modeling of Half an LPix

Thermal Modeling of Half an LPix. Brian Maynard March 10, 2010. Assumed Material Properties. Power dissipation for irradiated silicon (input to ANSYS). Power dissipation at 1e16 n eq /cm 2 ~122 mW/cm 2 (from T. Affolder ). For annealed silicon, we simply multiply

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Thermal Modeling of Half an LPix

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  1. Thermal Modeling of Half an LPix Brian Maynard March 10, 2010

  2. Assumed Material Properties

  3. Power dissipationfor irradiated silicon(input to ANSYS) • Power dissipation at 1e16 neq/cm2 ~122 mW/cm2 (from T. Affolder ) For annealed silicon, we simply multiply the above function by 0.57 for an operating voltage of 900V (T. Affolder) It is assumed the silicon is annealed

  4. Power Distribution in Chip Constant Pixel Power (CPP) +1/R Digital Power section of chip (RDP) Constant Digital Power (CDP) (1/14th the area of the total chip) The orange part of the chip (CDP) is situated such that it is farthest away from the beam center CPP + (7.5 mm*RDP)R-1 + CDP = Total Watts/Chip

  5. RDP=CPP=CDP=0.5W/chip Half that was used on next slide

  6. RDP=CPP=CDP=0.5W/chip

  7. RDP=CPP=CDP=1.5W/chip

  8. RDP=CPP=CDP=1.5W/chip

  9. RDP=CPP=CDP=1.5W/chip Meshing is finer than in last slide

  10. Summary • Still need to understand the model • Need to run various meshing size comparisons for the previous cases • Finer meshing approaches in the half L approaches the DT in the full L

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