110 likes | 236 Views
Diamond Inner Region for Thermal Modeling. Brian Maynard April 30, 2010. Assumed Material Properties. Power dissipation for irradiated silicon (input to ANSYS). Power dissipation at 1e16 n eq /cm 2 ~122 mW/cm 2 (from T. Affolder ). For annealed silicon, we simply multiply
E N D
Diamond Inner Region for Thermal Modeling Brian Maynard April 30, 2010
Power dissipationfor irradiated silicon(input to ANSYS) • Power dissipation at 1e16 neq/cm2 ~122 mW/cm2 (from T. Affolder ) For annealed silicon, we simply multiply the above function by 0.57 for an operating voltage of 900V (T. Affolder) It is assumed the silicon is annealed
Power Distribution in Chip Constant Pixel Power (CPP) +1/R Digital Power section of chip (RDP) Constant Digital Power (CDP) (1/14th the area of the total chip) The orange part of the chip (CDP) is situated such that it is farthest away from the beam center CPP + (7.5 mm*RDP)R-1 + CDP = Total Watts/Chip
RDP=CPP=CDP=0.5W/chip Half that was used on next slide
Sensor Layer Silicon Diamond
RDP=CPP=CDP=0.5W/chip with Diamond Inner Region
RDP=CPP=CDP=1.5W/chip Diamond Inner Region
Summary From a low power mode, the change in temperature is not that significant (~1C) For high power modes the change is more dramatic (~6C)