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Electron poor materials research group

Electron poor materials research group. Group meeting Sept. 08, 2010 Theory-VASP and simple tight binding. GaAs Comparison. Cardona, Phys. Rev. B 38, 1806–1827 (1988). GaAs Comparison. Richard, PHYSICAL REVIEW B 70, 235204 (2004). GaAs Comparison. Elabsy, Physica B 405 (2010) 3709–3713.

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Electron poor materials research group

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  1. Electron poor materials research group Group meeting Sept. 08, 2010 Theory-VASP and simple tight binding

  2. GaAs Comparison Cardona, Phys. Rev. B 38, 1806–1827 (1988)

  3. GaAs Comparison Richard, PHYSICAL REVIEW B 70, 235204 (2004)

  4. GaAs Comparison Elabsy, Physica B 405 (2010) 3709–3713

  5. InSb Comparison Gang Zhu, Semicond. Sci. Technol. 23 025009 (2008)

  6. InSb Comparison Mohammad, J Mater Sci 43:2935–2946 (2008)

  7. ZnSe Comparison Cui, Journal of Alloys and Compounds 472 (2009) 294–298

  8. ZnTe Comparison Khenata,Computational Materials Science 38 29–38 (2006)

  9. Compound Propertiescurrently all calculated with LDA

  10. Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT

  11. Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT

  12. Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT

  13. Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT

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