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Electron Poor Materials Research Group EPM RG

Electron Poor Materials Research Group EPM RG. Updates of Experiments in Augsburg --- Crystallographic study of SiB 3 , ZnSb… --- Synthetic attempts for a- B --- Property measurements of (ZnSnSb 2 ) 1-x (InSb) 2x. Charge Density Study by the Analysis of High Resolution Diffraction Data.

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Electron Poor Materials Research Group EPM RG

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  1. Electron Poor Materials Research Group EPMRG Updates of Experiments in Augsburg --- Crystallographic study of SiB3, ZnSb… --- Synthetic attempts for a-B --- Property measurements of (ZnSnSb2)1-x(InSb)2x

  2. Charge Density Study by the Analysis of High Resolution Diffraction Data • Bruker AXS diffractometer with Imus micro-focus X-Ray Source • Ag-radiation, the same sinq/l at much lower angle • Enough data redundancy for good statistics

  3. Multipole Refinement of ZnSb in Jana 2006 • Diffraction data were collected at 100K with 2q up to 120o • Extinction and anharmonicity were refined before starting the multipole refinement • d electrons of Zn were considered as valence electrons • Multipole refinment was stopped at 2nd order (quadruple) • R=1.38% and highest peak of 0.34 e/Å3

  4. Total Density

  5. Total Laplacian +/- 8, 4 , 2 * 10^n and n is +/- 3, 2, 1.

  6. Dumbbell Rattling?

  7. Heat Capacity of ZnSb

  8. Synthesis of b- SiB3 with high pressure

  9. Si1: 84% Ge1: 16% Si2: 90% Ge2: 10% Si1-xGexB3 Si1: 84% Ge1: 16% Si1: 84% Ge1: 16%

  10. Thermoelectric Chalcopyrite (ZnSnSb2)1-x(InSb)2x + 4Sn x = 0.9, x = 0.85, x=0.8 and InSb (quenched from 1:1 melt and Sn-flux growth)

  11. InSb Seebeck

  12. All Seebecks from Augsburg’s work

  13. 4 3 Thermal Conductivity (W/mK) 2 x=0.85_Augsburg_2p x=0.8_Augsburg_2p 1 x=0.9_Augsburg_4p InSb_Sn Flux 0 0 50 100 150 200 250 300 T (K) All TCs from Augsburg’s work

  14. All Resistivities

  15. Acknowledgement Dr. Wolfgang Scherer Dr. Ernst-Wilhelm Scheidt Dr. Georg Eickerling Dr. Francisco J. Garcia-Garcia Christoph Hauf Andreas Fischer

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