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E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University

SiC influence on x-ray measurements of GaN films compared with photoluminescence and electrical data. E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University D.S. Katzer, H Dietrich Naval Research Labs Ulrich Schwartz Universität Regensburg February 12, 2002.

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E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University

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  1. SiC influence on x-ray measurements of GaN films compared with photoluminescence and electrical data E.A. Preble, Z. Reitmeier, S. Einfeldt, R.F. Davis North Carolina State University D.S. Katzer, H Dietrich Naval Research Labs Ulrich Schwartz Universität Regensburg February 12, 2002

  2. Topics of discussion • Background • SiC wafer variability • SiC influence on GaN x-ray data • Wafer mapping as a solution to SiC influence • Extraction of reliable and repeatable x-ray data • Do x-ray map results correlate to PL and electrical results?

  3. Typical SiC Wafers SiC FWHM

  4. SiC XRD correlation with GaN XRD

  5. SiC/GaN FWHM Relationship GaN FWHM not influenced by SiC

  6. GaN Thickness Data

  7. AlN Buffer Layer Changes

  8. AlN vs AlGaN Buffer Layers

  9. PL maps vs. X-ray maps

  10. Electrical results – Mobility vs Resistivity

  11. Electrical results – Mobility vs Bulk Carrier Concentration

  12. Electrical results – Mobility

  13. Electrical results – Resistivity

  14. Electrical results – Carrier Concentration

  15. Why isn’t there a correlation? • XRD vs PL • X-ray measurements are bulk measurements • PL measurements are more localized • Correlations are not found because of scale difference • XRD vs Electrical Data • Both measurements are large area • Electrical results are not sensitive to domain tilting that is observed via XRD • This x-ray technique is not useful in prediction of electrical results

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