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Initial [111] wafer

Initial [111] wafer. Deposit catalyst particles. Raise temperature above eutectic. SiH 4. SiH 4. SiH 4. H 2. H 2. H 2. H 2. H 2. H 2. Si. Si. Si. Nanowire growth. SiH 4. SiH 4. SiH 4. H 2. H 2. H 2. H 2. Si. H 2. Si. H 2. Si. Nanowire growth. SiH 4. SiH 4. SiH 4.

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Initial [111] wafer

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  1. Initial [111] wafer

  2. Deposit catalyst particles

  3. Raise temperature above eutectic

  4. SiH4 SiH4 SiH4 H2 H2 H2 H2 H2 H2 Si Si Si Nanowire growth

  5. SiH4 SiH4 SiH4 H2 H2 H2 H2 Si H2 Si H2 Si Nanowire growth

  6. SiH4 SiH4 SiH4 H2 H2 H2 H2 Si H2 Si H2 Si Nanowire growth

  7. SiH4 SiH4 SiH4 H2 H2 H2 H2 Si H2 Si H2 Si Nanowire growth

  8. Growth completed

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