Electronic Properties of Ceramic Films

1. Electronic Properties of Ceramic Films Tim Jurasevich Advisor: Dr. Kvam

2. Outline • Background Info • Goals • Procedure • Results • Conclusions

3. Perovskites • ABO3 • Middle atom can move • Cubic above Curie temperature • Structure changes below Curie temperature • Permanent dipole

4. Conductive Metal Oxides • Conductive • Middle atom won’t move • Not capacitive • Ferroelectric Fatigue

5. SrRuO3 • Orthorhombic • a = 5.57 Å • b = 7.86 Å • c = 5.54 Å • Nearly Tetragonal

6. LaNiO3 • Rhombohedral • a = 5.45 Å • Low degree of tilt • Nearly Cubic

7. Research Goals • Create Strontium Ruthenate (SrRuO3) and Lanthanum Nickelate (LaNiO3) thin films • Sol-gel process • Refine process • Investigate properties of the thin films

8. SrRuO3 sol-gel RuCl3 Ethanol Water SrAc2 H2O2 Black More black LaNiO3 sol-gel La(NO3)3 2-methoxyethanol MEA NiAc2 Dark Blue Sol-gel process

9. Sol-gel process • Spin coated • SrRuO3 on Silicon • LaNiO3 on Glass • Annealed • SrRuO3 @ 800°C • LaNiO3 @ 700°C

10. Visual Inspection

11. Sputtering Platinum • Platinum stripes sputtered along the edges and in the middle • Lots of platinum required for good electrode

12. Optical Microscopy

13. X-Ray Diffraction

14. X-Ray Diffraction

15. X-Ray Diffraction

16. Resistivity • SrRuO3 • ρ = 350 µΩ∙cm • Ideal: 300 µΩ∙cm • LaNiO3 • ρ = 700 µΩ∙cm • Ideal: 600 µΩ∙cm

17. Conclusions • SrRuO3 and LaNiO3 can be prepared by sol-gel methods • Both thin films exhibit fairly low resistivities • Process variations affect crystallographic texture

18. Thank You Questions? Comments?