2005 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wirel

1. 2005 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public Conference July 13, 2005 San Francisco, CA, USA

2. Objectives • Use wireless IC as system / technology driver for ITRS • Address intersection of Si-based technologies with III-V compound semiconductors and other potential technologies (MEMS, BAW, Passives, ..) • Present technical challenges and requirements for AMS & RF IC technologies in wireless applications for cellular phones, WLAN/WPAN, automotive radar, and phased array RF systems, frequencies 0.8-100GHz • Divide Working Group into 5 sub-groups • CMOS for RF and AMS (0.8-10 GHz) • Bipolar for RF and AMS (0.8-10 GHz) • Power Amplifiers and Power Management (0.8-10GHz) • Passives for RF&AMS and PA (0.8-10GHz) • Millimeter Wave (10-100GHz) • Isolation - not in requirement table • - separate discussion under difficult challenges and potential solutions

3. Working Strategy • Methodology: • (1) Communication system : protocols, standards, frequencies • (2) Circuits: figure of merit (A/D D/A, LNA, VCO, synthesizer, PA) • (3) Devices: technology requirements/solutions/challenges • Divided into 2 frequecy bands • (1) 0.8 - 10 GHz (CMOS, Bipolar, Passives, Power Amplifiers) • (2) 10 - 100 GHz (mm-Wave) • Generates roadmap in each of the following areas: • requirements, difficult challenges, potential solutions, cross-TWG focus • Tables cover technologies • Si, SiGe, GaAs, InP, SiC, GaN • and device structures • MOSFET, LDMOS, HBT, MESFET, PHEMT, MHEMT, on-chip passives

4. 2005 Organization • 34 members ( 22 US, 6 Europe, 6 AP) • compare to 2004; 27 members (14 US, 7 Europe, 6 AP) • 7 new members • Chair: Margaret Huang, Freescale • Co-Chairs: Bin Zhao, Skyworks • Jan-Erik Mueller, Infineon • Editor: Herbert Bennett, NIST 2005 New Members

5. 2005 Organization Sub-Group (1): CMOS Peter Cottrell, IBM (L) Ralf Brederlow, Infineon Mark Fedasiuk Intel Digh Hisamoto, Hitachi Margaret Huang, Freescale Takahiro Kamei, Oki Electric Yukihiro Kiyota, Sony Victor Liang, UMC Bernard Sautreuil, STM Sam Shichijo, TI Bin Zhao, Skyworks 2005 New members

6. 2005 Organization Sub-Group (2): Bipolar Marco Racanelli, Jazz (L) Stefaan Decoutere, IMEC Erwin Hijzen, Philips Alvin Joseph, IBM Jay John Freescale Bin Zhao, Skyworks Sub-Group (3): Passives Sam Shichijo, TI (L) Doug Coolbaugh, IBM Stefaan Decoutere, IMEC Yoshihiro Hayashi, NEC Dim-Lee Kwong, UT Austin H.C. Tseng, UMC Bin Zhao, Skyworks 2005 New members

7. 2005 Organization Sub-Group (4): PAs & Power Management Julio Costa, RFMD (L) Chuck Weitzel, Freescale (L) Jim Dunn, IBM Dave Halchin, RFMD Jan-Erik Mueller, Infineon Peter Zampardi, Skyworks, Sub-Group (5): Millimeter Wave (10-100GHz) Tony Immorlica, BAE Systems (L) Herbert Bennett, NIST Ronald Grundbacher, Northrop Grumman Tom Kazior, Raytheon Minh Le, Vitesse David McQuiddy, TriQuint Herbert Zirath, Chalmers University John Zolper, DARPA 2005 New members

8. 2005 Requirement Tables Updates • CMOS • Derived from 2004 “AMS” and “RF Transceiver” Technology Requirement Tables • Merged high-speed analog CMOS and RF CMOS => Performance analog/RF • Merged precision analog CMOS and driver CMOS => Precision analog/driver • Performance analog CMOS base on LSTP CMOS with 1 year lag • The trend of higher integration and performance levels for logic with mixed-signal circuitry have continued with the following results: • Steadily increasing digital processing capabilities enabling more signal treatments to be done in the digital domain. • Increased Ft and Fmax along with reduced RF noise. • Use of a second or a third I/O-transistor gate oxide, to optimize performance at higher voltages, to continue to support interfaces to the outside world, and to maintain the high signal-to-noise requirements for mixed-signal applications. • Introduction of multiple threshold voltages enable optimization of digital power-delay and offer design options for mixed-signal and RF applications. • Reduced power levels for digital, RF, and analog functions.

10. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 July 2005

11. 2005 Requirement Tables Updates • Bipolar • Derived from 2004 “AMS” and “RF Transceiver” Requirement Tables • Covered bipolar devices at moderate frequencies (<10GHz) and power (<0.5W) • Key driving forces included: speed, power consumption, noise and breakdown • Separated Bipolar Requirement Table into 3 sub-areas: • High Speed – highest speed bipolar devices • RF – most typical bipolar device used for wireless (0.8-10 GHz) • High Voltage – bipolar devices from part of 2004 PA table • Silicon (SiGe) bipolar devices are included, III-V HBTs are not included • Major updates from 2004 Requirement Tables • Added Ft/Fmax/BVceo where missing to all device types • Removed power supply requirement (more meaningful for CMOS) • Added current density at peak Ft for high speed device • Overlap with other tables • High Speed Bipolar (mmWave Table) • High Voltage Bipolar (PA Table)

12. 2005 Requirement Tables Updates • Passives • Derived from 2004 “AMS”, “RF Transceiver” and “PA” Requirement tables • No major changes expected on the component parameters • Separated into: • Analog - for low frequency analog/mixed signal applications • MOS capacitor and resistor (thin film BEOL and polysilicon resistor) • MOS capacitor based on CMOS roadmap precision device gate Tox • As CMOS scaled, extra polysilicon resistor mask may be required • RF – for RF applications • Metal-insulator-metal (MIM) capacitor, inductor and MOS varactor • MIM density meeting all requirements (voltage linearity, leakage, matching and Q) • PA – for power amplifier applications • Remains largely unchanged

13. 2005 Requirement Tables Updates • PAs & Power Management • Passives were removed from the 2005 PA table and incorporated into Passives • PA table remains essentially unchanged. PA device evolution is slow due to nearly fixed battery voltages and ruggedness requirements. • 2004 predictions for battery voltage reduction from 3.4V were unrealized. Battery technology will remain at the same voltage through the next 2-3 years. • SiGe multiband cellular PA being sampled but not yet present in any significant volumes. CMOS PA being discussed and sampled but demonstration of viable and rugged PAs are still not published. • ITRS having difficulty recruiting members of CMOS PA companies. • Highly integrated modules with multi-layer laminates/LTCC are dramatically reducing total RF front end area. • PA potential solutions show silicon integration enablers for PA integration into system chip with a focus on SOI and high resistance substrates and above-IC RF MEMS technology.

14. 2005 Requirement Tables Updates • Basestation PAs • Device cost, as measured by dollars per RF Watt, is projected to steadily decrease from about $0.70/W today to less than $0.50/W by 2008 • Applications space is moving from 2GHz and below to higher frequencies, such as WiMAX at 3.5 Ghz and from saturated power amplifiers to more linear amplifiers to support CDMA and WCDMA • The trend for all semiconductor device technologies is to move to higher voltage that will increase power density and reduce device size for the same output power. • As frequencies increase, LDMOS will experience challenges from GaAs FET and SiC MESFET. While long-term SiC technology will be supplanted by GaN technlogy. • GaN offers power densitites 4 times larger than silicon LDMOS and GaAs

15. 2005 Requirement Tables Updates • Millimeter Wave (10-100GHz) • Projections will be taken out to near term [~2011] only, as in previous years • compound semiconductors do not enjoy the decades of history from which to extrapolate as does silicon • industry is smaller, less mature, lower investment than silicon • Gate dimensions not shrinking as fast as predicted in 2003-2004 roadmaps • 70 nm gate not in production until 2007 time frame • advances in performance tied more to material and device technologies e.g. higher performance MHEMTs at same lithographic dimensions as PHEMT • Some technologies will tend to obsolete during this decade • Low noise GaAs MESFETs are expected to have no new designs past 2006 • foundries are likely to produce for legacy products/end of life buys only • same trends also apply to low voltage power MESFETs • PHEMTs and InP HEMTs may lose ground to MHEMT late in decade • GaN advancing much quicker that predicted in 2003/2004 • some parameters colored “red” for 2007 in the 2004 update have already been demonstrated; but materials quality and device reliability are still issues for volume production

16. Difficult Challenges (1) • Signal isolation – challenge to both technologists and EDA tool providers • Optimizing analog/RF CMOS devices with scaled technologies: voltage gain, mismatch, 1/f noise, and leakage • Fundamental changes in CMOS device structure to FDSOI or Dual-Gate device may lead to the need of separate process steps to fabricate conventional precision analog/RF drives devices, resistors and varactors • Reduced power supply voltages: degradation in SNR and signal distortion performance • Cost and integration complexity of integrating bipolar device in aggressively scaled CMOS nodes (such as conflicting thermal budget) • Cost and performance tradeoff of integrating passive devices in scaled CMOS (additional processing steps, silicon area, need of new material)

17. Difficult Challenges (2) • Compound semiconductor substrate quality, especially for SiC • Larger size compound substrates [GaAs, SiC and InP] for lower chip costs and compatibility with silicon processing equipment • Epitaxial layers in compound semiconductors engineering to relieve stress in heteroepitaxy • Non-linear and 3D Electromagnetic models for accurate design and simulation • CAD solution for Integrated Radio SIP design (chip, passive, component, package, tool compatibility, model accuracies)

18. BACKUP

19. 2005 Cross-cut ITWG Issues • Assembly & Packaging • Assy&Pkg led Module roadmap (substrates, embedded passives) • Opportunities to include MEMS, BAW, Switch and Antenna in wireless roadmap. • Plastic package for Base station Pas, mm-wave packaging, Thin packages/modules • Thermal management • System Drivers and Design • Design led Radio SIP design flow • Crosstalk immune circuits for SoC and SiP integration • Modeling and Simulation • Accurate, fast and predictive Analog/RF compact models • Computationally efficient physical models for carrier transport for III-V • Efficient 3D modeling and simulation for mixed signal circuits • Thermal modeling and simulation integrated with RF and digital design tools • Test • RF/analog/digital test for SoC system • Reduced RF circuit final test • PIDS • Timing for FDSOI and Dual Gate CMOS for LSTP roadmap • Emerging Research Devices • RF/Analog functions and performance with novel device structures