“air-gap” organic single-crystal field-effect transistor

1. Development of the single-crystalorganic field-effect transistors (OFETs) at Rutgers enabled the exploration of transport phenomena in organic semiconductors and the fundamentals of organic electronics. The main results of the 2nd year of the project: • the first real space molecular resolution images of the surface of a single crystal organic semiconductor E. Menard et al., Adv. Mater.18, 1552-1556 (2006) • observation of the Hall effect in OFETs; first direct measurements of the density of mobile field-induced carriers in the OFET channel V. Podzorov et al., Phys. Rev. Lett. 95, 226601 (2005). • the first review on the fundamentals of charge transport in single-crystal organic transistors M. E. Gershenson et al., Rev. Mod. Phys., Sept. 2006 • fast carrierdynamics of light-induced excitations in organic crystals H. Najafov et al., Phys. Rev. Lett. 96, 056604 (2006) O.Ostroverkhova et al., Appl. Phys. Lett. 88, 162101 (2006). • ultrasensitive sensing with organic field-effect transistors V. Podzorov et al., Appl. Phys. Lett. 87, 093505 (2005). • observation of the photo-induced charge transfer at the interface between organic molecular crystals and polymers V. Podzorov and M. E. Gershenson,, Phys. Rev. Lett. 95, 016602 (2005). “air-gap” organic single-crystal field-effect transistor

2. single-crystal rubrene OFET • Education: • Res. Assoc. and co-PI: Vitaly Podzorov • Undergrad. students: Matt Calhoun and Javier Sanchez • Collaborators: • I. Biaggio, H. Najafov (Lehigh U.) • D. Frisbie (U. Minnesota) • J. Rogers,E. Menard (UIUC) • A. Morpurgo (Delft Tech. U.) • D. Fichou (CEA-Saclay) • O. Ostroverkhova, F. Hegmann (U. Alberta) • J. Anthony (U. Kentucky) MG and VP were co-organizers of the ICAM Workshop on Electronic Phenomena in Single-Crystal Organic Semiconductors, Baltimore, March, 2006, which attracted ~ 40 leading researchers from the USA, Japan, France, Italy, the Netherlands, Great Britain, and Switzerland. http://www.physics.rutgers.edu/ICAM-EPOS Our results have been recognized by Scientific American as one of the major contribution to the development of flexible electronics in 2005. Scientific American 50 Award, Scientific American, Dec. 2005.