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CVD Diamond Sensors for the Very Forward Calorimeter of a Linear Collider Detector

CVD Diamond Sensors for the Very Forward Calorimeter of a Linear Collider Detector. K. Afanaciev, E. Kouznetsova, W. Lange, W. Lohmann. Diamond samples. Fraunhofer Institute (Freiburg) : CVD diamond 12 x 12 mm 300 and 200 um thickness Different surface treatment :

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CVD Diamond Sensors for the Very Forward Calorimeter of a Linear Collider Detector

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  1. CVD Diamond Sensors for the Very Forward Calorimeter of a Linear Collider Detector K. Afanaciev, E. Kouznetsova, W. Lange, W. Lohmann

  2. Diamond samples • Fraunhofer Institute (Freiburg) : • CVD diamond 12 x 12 mm • 300 and 200 um thickness • Different surface treatment : • #1 – substrate side polished; 300 um • #2 – substrate removed; 200 um • #3 – growth side polished; 300 um • #4 – both sides polished; 300 um • Metallization: • 10 nm Ti + 400 nm Au • Area 10 X 10 mm

  3. HV Diamond Keithley 487 N2 I(V) dependence – setup Measurements were done with Keithly 487 picoammeter • Extremely low currents => N2 atmosphere EM shielding • Average resistance ~(1013-1014) Ohm (ohmic behavior) • 3 samples from different groups have “non-ohmic” behavior and lower resistance (~1011 Ohm) Usual I(V) curve Non-ohmic curve

  4. ADC Sr90 delay PA diam. Scint. discr & PM1 Gate discr PM2 Charge Collection Distance (CCD) Qmeas. = Qcreated x ccd / L Qcreated(mm) = 36 e-h pairs • The samples haven’t been irradiated before these measurements • All data was taken 2 minutes after bias voltage applied

  5. CCD measurements results

  6. CCD – irradiation studies • The samples were irradiated with Sr-source with estimated dose-rate of about 0.45 Gray per hour • The total absorbed dose for all the samples was at least 5 Gy. • Bias field was set to 1 V/m • Irradiation was homogeneous over the sample area • Parameters monitored during the irradiation: • Sr-spectrum peak position • width of the peak (->noise) • current in HV-circuit • test pulse from a generator (-> electronics stability)

  7. CCD – irradiation studies – results Group #2 (substrate side removed). HV = 200V Group #3 (growth side polished). HV = 300V

  8. CCD – irradiation studies – results Group #2 (substrate side removed). HV = 200V Group #1 (substrate side polished). HV = 300V

  9. CCD – irradiation studies – results Group #3 (growth side polished). HV = 300V Group #4 (both sides polished). HV = 300V

  10. N (575) N (637) FAP 2_1 LO Phonon Si (770) FAP 4_2 Photoluminescence analysis -> no nitrogen, no silicon HeCd Laser Reference spectra

  11. Raman spectroscopy Resolution ~ 1 cm-1 Result= S(diam)/S(graphite)*1000 Result= S(diam)/S(graphite)*1000 Resolution ~ 1 cm-1

  12. FAP 2_1 FAP 4_1 Raman spectroscopyresults

  13. Removed substrate • Group#3 – removed substrate (300 mm -> 240 mm)

  14. Results and further studies • Group#2 in general can work as a detector • Raman spectroscopy + photoluminescence analysis -> no nitrogen, no silicon • Next steps: • Influence of the substrate side on CCD and stability • Homogeneity and linearity required for the application • Test beam (May 2004)

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