200 likes | 299 Views
Variation-Aware Design for Nanoscale VLSI. Sachin S. Sapatnekar University of Minnesota CAS-FEST 2010 Circuits and Systems Forum on Emerging and Special Topics. The proliferation of computing. Tablets Entertainment. Smart grid Healthcare, automotive, security, ….
E N D
Variation-Aware Design for Nanoscale VLSI Sachin S. Sapatnekar University of Minnesota CAS-FEST 2010 Circuits and Systems Forum on Emerging and Special Topics
The proliferation of computing • Tablets • Entertainment • Smart grid • Healthcare, automotive, security, …
The incredibly shrinking transistor Electronics, Vol. 38, No. 8, Apr 19, 1965
Cost of going to a new technology [GLOBALFOUNDRIES]
So why bother? • Because it makes economic sense… • R&D costs are rising, but so is revenue [GLOBALFOUNDRIES]
Layer 5 Layer 4 Layer 3 Layer 2 Layer 1 Bulk Substrate New technologies: 3D ICs Detailed view Generalized view Interlayer Via Through-silicon Vias (TSVs) SOI wafers with bulk substrate removed Inter-layer bonds 1mm Bulk wafer Metal level of wafer 1 10mm 500mm Device level 1 Adapted from [Das et al., ISVLSI, 2003] by B. Goplen
New technologies: near-threshold computing [Dreslinski et al.]
Types of variations • Based on the model • Systematic • Random • “Random” • Based on the source • Process • Environmental • Design Uncertainty • Based on the time when they are seen • One-time variations • Run-time variations
Channel width variation: poly/ diff rounding, misalignment Gale oxide thickness Random dopant fluctuations Poly Diffusion Uniform Non-uniform Source: S. Tyagi Process-related variations: examples Source: Pey&Tung Source: S. Borkar Many of these variations can be modeled by Gaussians
A taxonomy of variations (contd.) Die-to-Die Wafer-to-Wafer Lot-to-Lot Die-to-Die (D2D) Variations Within-Die (WID) Variations Random Systematic [Intel]
The (f)law of averages [The drunk skater problem] http://www.stanford.edu/~savage/flaw/
Why is this important? • Because it affects circuit timing… • … and power
Si Si Si H H H H2 Gate Oxide Poly Substrate SiH + h+→ Si+ + ½H2 Aging effects • Circuit behaviour degrades with time NBTI Electromigration Oxide breakdown Hot carrier injection • Normal lifetime • Constant failure rate • Based on TDDB, EM, hot-electrons… Failure rate [S. Sjøthun] 1-40 weeks Time 7-15 years [Suto, Teradyne]
Environmental variations • Supply voltage • Soft errors Source: Automotive 7-8, 2004 1
Fried egg By Trubador, available at http://www.phys.ncku.edu.tw/~htsu/humor/fry_egg.html Environmental variations: Temperature [IBM] [Chu 1999] [Joshi] [Intel]
Fried egg Tier 5 Tier 4 Tier 3 Tier 2 By Trubador, available at http://www.phys.ncku.edu.tw/~htsu/humor/fry_egg.html Tier 1 Bulk Substrate Technology trends Detailed view Generalized view Intertier Via [Intel] SOI wafers with bulk substrate removed [Chu 1999] Intertier bonds 1mm Cache 70ºC Bulk wafer Metal level of wafer 1 10mm [Intel] Core 500mm Device level 1 120ºC Adapted from [Das et al., ISVLSI, 2003] [Joshi]
Overcoming variations • Three-pronged strategy • Reduce the fundamental sources • Don’t allow them to be expressed (design around the effects) • Mitigate the effects • Example: temperature effects • Low-power design • Design to reduce T • Design to mitigate T-driven degradation • All all levels of abstraction, using all available methods • Design • CAD • Architecture/OS • Algorithms
Adaptive sensing/mitigation A • Sense/adapt feedback loops • Guardbanded presilicon fixes vs. adaptive postsilicon fixes • Monitor cores • Canary circuits • Silicon odometer • Razor, CRISTA, etc. ... C Phase B PC _ OUT Sensor-driven Comp . ... (freq=fref - fstress) Up to 35% overhead Vdd DC-DC Converter Circuit Block LUT Guardbanding vbp Sensor FBB Generator vbn [Kim, Minnesota]
CAS-FEST 2010 • A Resilience Roadmap • Sani Nassif, IBM • Mitigating Variability in Near-Threshold Computing • Dennis Sylvester, Univ. of Michigan • Robust System Design to Overcome CMOS Reliability Challenges • Subhasish Mitra, Stanford Univ. • Computer Aided Circuit Design for Reliability in Nanometer CMOS • Georges Gielen, Katholieke Univ. – Leuven • Process Compensated High Speed Ring Oscillators in Sub-Micron CMOS • Alyssa B. Apsel, Cornell U. • Containing the Nanometer Pandora-box: Design Techniques for Variation-Aware Low-Power Systems • Abhijit Chatterjee, Georgia Tech.