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Silvaco TCAD Introduction

Silvaco TCAD Introduction. David Green david.green@silvaco.com. Topics. Introduction Why use TCAD (Technology Computer Aided Design) Silvaco TCAD overview Interactive tools Additional Resources Conclusions. Introduction. Founded in 1984.

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Silvaco TCAD Introduction

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  1. Silvaco TCADIntroduction David Green david.green@silvaco.com

  2. Topics • Introduction • Why use TCAD (Technology Computer Aided Design) • Silvaco TCAD overview • Interactive tools • Additional Resources • Conclusions

  3. Introduction • Founded in 1984. • Market leader in TCAD, Spice simulation & IC CAD. • Large customer base of Foundry, IDM, ASIC and Fabless semiconductor Companies. • Privately held. • Fifteen locations worldwide. • Silvaco Europe is a major R&D centre for TCAD and EDA modelling.

  4. Why use TCAD? Structure Models Data • The ITRS roadmap indicates that TCAD can reduce the cost of development cycles by ~30%. • You can see “inside” the device. Measurements tell you “what” happens, not “why” it happens TCAD provides the “why” answers. • Captures and visualizes theoretical knowledge. You can view information that is difficult or impossible to measure.

  5. Silvaco – Software flow Process Simulation Device Simulation SPICE Modeling 3D Parasitic RC Extraction Layout SPICE DRC/LVS Reliability Analysis Variation Analysis

  6. Cross-sector Applications

  7. Silvaco TCAD Overview Victory Device 2D/3D Electro/Optical/ Thermal/Atomistic Device Simulation Victory Process 2D/3D Process Simulation + Emulation Deckbuild – Deck Editor + Execution Virtual Wafer Fab (VWF) - DOE Tonyplot – Visualization 3D RC Extraction Clever

  8. Victory Process Nano-scale Ion Beam Etch/Re-deposition • Multipurpose 2D/3D process simulator and emulator • No learning curve moving from 2D to 3D • From detailed physical simulations on complex geometries to rapid prototyping of large structures FINFET Large Power Devices

  9. Victory Process Open Modelling Interface – import your own models Layout driven 3D oxidation (including stress) Automatic meshing and Adaptive Mesh Refinement Micro LED’s Devices on flexible substrate strain profile (50 degree bending) Initial structure Random Texture (Solar and Image Sensors)

  10. Victory Process – Athena Legacy • Syntax for flow description is based on the Stanford legacy • Easy to understand and easy to learn • 1D → 2D → 3D • One syntax • Automatic switching of the dimension depending on the layout • Process mode → Cell mode • One syntax • Athena → Victory Process • 90 % syntax compatibility • Differences due to • 3D which is not available in Athena • More extensive capabilities of Victory Process • Deckbuild supports translation of Athena input decks to Victory Process

  11. Linking Process to Device: Victory Mesh • Input: • Process simulation information including geometry, doping, electrodes • Features: • Different type of mesh (Conformal or Delaunay) • Refinement on Quantities, Shape, Distance • Structure manipulation (join, slice, crop, mirror ...) • Output: • 2D and 3D structures

  12. Victory Device: Generic Features • General purpose 2D/3D device simulator • DC, AC, and transient analysis • Drift-diffusion and energy balance transport equations • Self-consistent thermal simulations (self-heating) • MixedMode circuit/device simulation • Customizable material database • Customizable physical models 3D Grain Boundary simulation TFT and 3D-NAND

  13. Victory Device: Generic Features Thyristor Simulation • Stress-dependent mobility and bandgap models • Multi-threaded & distributed computing • Quantum-correction and tunneling models • Ray-trace and FDTD optical methods • Radiation effects (inc. single event upset, total dose and dose rate) • 64-bit, 80-bit, 128-bit, 160-bit, 256-bit and 320-bit precision Parallelization and distributed computing

  14. Simulate physics-based devices in combination with compact analytical models in a circuit environment Any combination of and 2D/3D Devices simulated with a SPICE netlist circuit description Wide range of SPICE models available Unlimited number of physical devices or compact model elements Victory Device: MixedMode / Circuit Simulation 100 us -40 V Vselect Vdd +15V 20 V 4 -40 V Vdata 10 V Drive TFT 10 us 10 us Vselect 2 4 1 3 3 3 Vdata 5 6 Switch TFT Vcathode –30 V

  15. Victory Device: Electro-Thermal Wachutka’s thermodynamically rigorous model for Joule heating, Generation and Recombination and Peltier-Thomson effects Dependence of material and transport parameters on lattice temperature Specify heat-sinks, thermal impedances, and ambient temperatures. Compatible with both the drift-diffusion and energy balance transport models

  16. Victory Device: Optoelectronic Model light absorption and photogeneration in devices Arbitrary topologies, internal and external reflections and refractions, polarization dependencies and dispersion Mono-chromatic or multi-spectral optical sources DC, AC, and transient response in the presence of arbitrary optical sources

  17. Victory Device: Optoelectronic cont. Light Simulation Options: Ray Tracing Method (RTM) Transfer Matrix Method (TMM) Beam Propagation Method (BPM) Finite Difference Time Domain (FDTD) Uniform and Gaussian illumination Circular and elliptical optical source User defined optical source

  18. Victory Device: Radiation Effects • Irradiate feature - arbitrary radiation sources • e-/h+ generation and recombination rates as functions of electric field • Carrier transport and trapping in silicon dioxide • Interface to Athena process simulator for modeling process-dependent defect distributions and photocurrent evaluation • Charge generation as a function of photocurrent density and LET • Self consistent solution of device equations with charge generation in insulator layers • Flexible C-interpreter routines to prototype custom models for photogeneration, recombination, and charge trapping • Displacement Damage

  19. Victory Device: Radiation Effects Cont. • Typical applications: • Non damaging (photons) total dose radiation Vt shifts • Inter device leakage from photonic total dose radiation • Intra device leakage from trench oxide charging • Particle fluence damaging total dose radiation (protons) • High dose rate radiation (“prompt dose”) • Single Event Upset (SEU) • Single Event Burnout (SEB) • Single Event Gate Rupture (SEGR) • Circuit behavior in MixedMode or SmartSPICE

  20. SPICE Model Extraction: UTMOSTIV Fast and accurate SPICE model generation and validation Powered by high-speed Smartspice interface Hundreds of simulations per second No speed slowdown when using macro-models Accepts measured or simulated data User-friendly GUI and powerful Javascript mode

  21. SPICE Model Extraction: Techmodeler Behaviouralnonlinear SPICE models Fast modeling for new device technologies Auto export to Verilog-A, C library • Oxide TFT and OLED • Mix physical with analytical equations

  22. Deckbuild: GUI for Deck Editing and Execution • Searchable examples database • Quick launch of interactive tools • Remote execution of simulations • Contextual highlighting of deck and run-time output syntax • Separate Outputs and Variables panels to track variables and files

  23. Virtual Wafer Fab: Design of Experiments • Push button solution • Define split lots • Probe design space • Queuing for efficient license usage • Grid Engine • Automate and export key parameter data • Reduce post processing effort

  24. DevEdit: 2D / 3D Device & Mesh Editor Create a device from scratch, re-mesh or edit an existing device Parameterize and vary automatically with DeckBuild or VWF Mirroring, stretching, cloning and joining GUI to draw or edit devices directly Re-mesh on volume data Import 1D doping profiles

  25. TonyPlot: Interactive Visualisation Tool Supports 1D, 2D, meshed data, Smith and polar charts Export data for use in third party tools Measurement tools (probes, rulers, etc) Overlay plots Movie Mode Cut lines Function and Macro

  26. TonyPlot: Interactive Visualisation Tool Graphical rotation around any axis (x, y, z), repositioning and zoom in/out Surface contours Isosurfaces Probe within the 3D structure Hide materials or regions Fully customizable Cut-plane: 2D slice exported to file or TonyPlot 2D

  27. Collaborations Process simulation TU Vienna - Christian Doppler Laboratory (CDL) for High Performance Technology Computer-Aided Design (HPTCAD) Device simulation TU Vienna - CDL on STT MRAM UC Davis - GaN Process simulation NASA - SiC SEE NRL - GaN SEE Ongoing: SCOPE: Near Field Detector with printed electronics. DOMINO: Scientist exchange - TFT Compact models. EXTMOS: Organic TFT models. ALMA: Thermal conduction. 1D-NEON: Wearable electronics. Multiscale solar: solar cells. Challenge: 3C SiC. HARD: Scientist exchange - radiation detectors ASCENT: Scientist exchange - Advanced solar cell modelling

  28. Further Resources • 500+ worked standard example via www.silvaco.com or deckbuild. • Simulation Standard (archived to 1992). • Webinars (archived). • Presentation materials. • Manuals and release notes. • Support, training & seminars. • SURGE

  29. Conclusions • Physical device simulations capture theoretical knowledge to provide essential insight. They can predict behaviour in the entire design space. • TCAD simulations provide data that is difficult to measure to help speed up innovation and development cycles. • From high accuracy detailed simulations to large area rapid prototyping. • No learning curve going between 2D and 3D. • Comprehensive multithreaded model set for all technologies. • Complemented with interactive tools and automation. • Extensive additional resources.

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