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DSSD and SSD Simulation with Silvaco. Mohamad Khalil APC Laboratory Paris 17/06/2013. DSSD and SSD Simulation with Silvaco. Compton Telescope Concept Detector Design S imulations Outlook. DSSD and SSD Simulation with Silvaco. Compton Telescope Concept.
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DSSD and SSD Simulation with Silvaco Mohamad Khalil APC Laboratory Paris 17/06/2013
DSSD and SSD Simulation with Silvaco Compton Telescope Concept Detector Design Simulations Outlook
DSSD and SSD Simulation with Silvaco Compton Telescope Concept
DSSD and SSD Simulation with Silvaco Classical Compton Telescope • Last decade: • X-ray domain • High and very high Ɣ-ray domains • instruments: INTEGRAL, XMM-Newton, SWIFT, Chandra, Fermi, HESS, MAGIC or VERITAS • The 0,4-100 MeV range: Much less progress • Difficulties in this energy range • Minimal photon interaction probability • Very high instrumental background induced by Cosmic rays • Best sensitivity made by the COMPTEL instrument CGRO mission (1991 – 2000) • COMPTEL instrument: two separate detectors • Scatterer • Calorimeter
DSSD and SSD Simulation with Silvaco Classical Compton Telescope • Last decade: • X-ray domain • High and very high Ɣ-ray domains • instruments: INTEGRAL, XMM-Newton, SWIFT, Chandra, Fermi, HESS, MAGIC or VERITAS • The 0,4-100 MeV range: Much less progress • Difficulties in this energy range • Minimal photon interaction probability • Very high instrumental background induced by Cosmic rays • Best sensitivity made by the COMPTEL instrument CGRO mission (1991 – 2000) • COMPTEL instrument: two separate detectors • Scatterer • Calorimeter
Compton Telescope Concept Source Simulation • Compton Imaging Technique: • Pioneered by the COMPTEL instrument • Scatterer • Calorimeter • New Improvements : • double-sided Si-strip tracking detectors (DSSD) • No more need for a calorimeter (much lighter) • fine spectral and position resolutions of modern Si detectors => better detection efficiency • Silicon has a high capability of measuring polarization • Large field of view of Silicon
Detector Design Detector Design
DSSD and SSD Simulation with Silvaco Recent Progress • Silicon micro-strip detectors are widely used for medical applications and in physics experiments as instruments to measure the position of a particle passing through the wafer bulk of the silicon detector • Sadrozinski, H.F.-W. , Nuclear Science, IEEE Transactions, 5752001 , 933 - 940
DSSD and SSD Simulation with Silvaco Recent Progress • Silicon micro-strip detectors are widely used for medical applications and in physics experiments as instruments to measure the position of a particle passing through the wafer bulk of the silicon detector • Sadrozinski, H.F.-W. , Nuclear Science, IEEE Transactions, 5752001 , 933 - 940
DSSD and SSD Simulation with Silvaco Double Sided Silicon Strip Detectors • A high resistivity n-type Silicon bulk • A set of heavily n-doped strips placed on the top (n-side) • A set of heavily p-doped strips on the bottom (p-side). • The p-side and n-side are perpendicular to each other
DSSD and SSD Simulation with Silvaco Double Sided Silicon Strip Detectors • DSSD as an ionizing chamber • Localization in the XY-plane • Energy deposition
DSSD and SSD Simulation with Silvaco Double Sided Silicon Strip Detectors • DSSD as an ionizing chamber • Localization in the XY-plane • Energy deposition
DSSD and SSD Simulation with Silvaco Double Sided Silicon Strip Detectors • What is a DSSD? • DSSD as an ionizing chamber • Localization in the XY-plane • Energy deposition • DSSD performance : • Depletion voltage • Electric Field shape • Capacitance • Leakage current • Charge collection and charge sharing
DSSD and SSD Simulation with Silvaco Double Sided Silicon Strip Detectors • What is a DSSD? • DSSD as an ionizing chamber • Localization in the XY-plane • Energy deposition • DSSD performance : • Depletion voltage • Electric Field shape • Capacitance • Leakage current • Charge collection and charge sharing
DSSD and SSD Simulation with Silvaco DSSD Performance Simulation
DSSD and SSD Simulation with Silvaco Simulation Tools • SILVACO semiconductor simulation toolkit : • Devedit:a tool capable of defining the structure to be simulated (2D and 3D) • Atlas: device simulator that predicts the electrical behavior of semiconductor devices • Deckbuild: a runtime environment for Atlas • Tonyplot: a tool designed to visualize Tcad 1D, 2D and 3D structures and solutions • http://www.silvaco.com/ • C++ generation engines • Input to SILVACO • Runtime: few seconds to tens of minutes
DSSD and SSD Simulation with Silvaco Simulation approach • Objective of the simulation • Depletion voltage • Electric Field shape • Capacitance • Leakage current • Charge collection and charge sharing • Main simulation parameters: • Thickness • Pitch and strip width to pitch ratio • Doping concentrations
DSSD and SSD Simulation with Silvaco Structure in 2D
DSSD and SSD Simulation with Silvaco Structure in 2D
DSSD and SSD Simulation with Silvaco Structure in 3D
DSSD and SSD Simulation with Silvaco Aluminum overhang
DSSD and SSD Simulation with Silvaco Depletion voltage
DSSD and SSD Simulation with Silvaco Depletion voltage
DSSD and SSD Simulation with Silvaco Depletion voltage
DSSD and SSD Simulation with Silvaco Depletion Voltage vs bulk concentration (or Resistivity)
DSSD and SSD Simulation with Silvaco Depletion Voltage vs bulk concentration (or Resistivity) • Depletion voltage conclusions: • Lowest bulk impurity concentration achievable • 1,3 1011cm-3 (30 kohm.cm)
DSSD and SSD Simulation with Silvaco Depletion voltage
DSSD and SSD Simulation with Silvaco Depletion Voltage • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco conclusions • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage • Capacitance conclusions: • Depends primarily on the ratio (favoring lower ratios) • Depends secondarily on the thickness and the pitch (higher thicknesses and/or lower pitches)
DSSD and SSD Simulation with Silvaco Leakage current
DSSD and SSD Simulation with Silvaco Leakage current
DSSD and SSD Simulation with Silvaco Capacitance
DSSD and SSD Simulation with Silvaco Leakage current
DSSD and SSD Simulation with Silvaco conclusions • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage • Capacitance conclusions: • Depends primarily on the ratio • Depends secondarily on the thickness and the pitch • Leakage current conclusions: • Depends primarily on the thickness • Depends on the applied voltage and the temperature • Ratio has almost no effect
DSSD and SSD Simulation with Silvaco Charge Collection
DSSD Performance Simulation Dead Zones • Increasing the voltage
DSSD and SSD Simulation with Silvaco Dead Zones • Increasing the thickness
DSSD Performance Simulation Dead Zones • Increasing ratio
DSSD and SSD Simulation with Silvaco Dead Zones • Increasing ratio
DSSD and SSD Simulation with Silvaco conclusions • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage • Capacitance conclusions: • Depends primarily on the ratio • Depends secondarily on the thickness and the pitch • Leakage current conclusions: • Depends primarily on the thickness • Depends on the applied voltage and the temperature • Ratio has almost no effect • Charge collection conclusions: • Dead zones increase with the decrease of the ratio • Beneficial to increase the thickness
DSSD and SSD Simulation with Silvaco Signal formation • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage • Capacitance conclusions: • Depends primarily on the ratio • Depends secondarily on the thickness and the pitch • Leakage current conclusions: • Depends primarily on the thickness • Depends on the applied voltage and the temperature • Ratio has almost no effect • Charge collection conclusions: • Dead zones increase with the decrease of the ratio • Beneficial to increase the thickness
DSSD and SSD Simulation with Silvaco Signal formation • Depletion voltage conclusions: • Lowest bulk concentration achievable • Thicker detectors and/or lower ratios require more depletion voltage • Capacitance conclusions: • Depends primarily on the ratio • Depends secondarily on the thickness and the pitch • Leakage current conclusions: • Depends primarily on the thickness • Depends on the applied voltage and the temperature • Ratio has almost no effect • Charge collection conclusions: • Dead zones increase with the decrease of the ratio • Beneficial to increase the thickness
DSSD Performance Simulation SILVACO Link with GEANT4 • A GEANT4 program: • Can deploy multiple silicon layers (DSSD) of adjustable thicknesses and adjustable separations • Photon source of adjustable energy • GEANT4 output: Energy and position of the gamma ray interaction event • Used as input for SILVACO/C++ charge collection simulation: • Imitate a single event • Imitate multiple synchronized or delayed events • Monter-carlo simulation ?- Problems with convergence for an extended simulation
DSSD and SSD Simulation with Silvaco Probe Station