Project: IEEE P802.15 Working Group for Wireless Personal Area Networks

1. Project: IEEE P802.15 Working Group for Wireless Personal Area Networks Submission Title: [Silicon Millimeter Wave Integrated Circuits for Wireless Applications] Date Submitted: [November 15, 2004] Source: [Brian Gaucher] Company [IBM Research] Address [PO 218 Rte 134 MS38-159 Yorktown Heights, NY 10598] Voice: [(914) 945-2596], E-Mail: [bgaucher@us.ibm.com] Re: [ Abstract:[Silicon Millimeter Wave Integrated Circuits for in the 60 GHz band have been built and tested and demonstrate that a potential low cost path exists that may enable consumer level mmWave wireless applications.] Purpose: [Contribution to mmW SG3c at November 2004 plenary in San Antonio] Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein. Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.

2. Outline • Silicon is ready for mmWave frequencies • Millimeter wave applications • Applications • Challenges • Lets look at 60 GHz WLAN as an example • Exemplary silicon circuits • Looking at higher frequencies • Exemplary circuits (VCOs, LNAs, PA’s…) • And what can we expect silicon mmWave ICs to cost ? • Summary and concluding remarks

3. Evolution of SiGe HBTs CMOS lithography • Significant improvement in Ft/Fmax with each generation 0.13um 1.2v 8HP mmWave 200/180GHz/1.7V 200/250GHz 7HP 0.18um 1.8v 120/100 GHz/1.8V 120/125GHz Radar (24 GHz Automotive) Wirleline (40 GbpsOC768) wireless 6HP 6HP 0.25um 2.5v 47/60 GHz/3.3V 0.5/0.35um 3.3, 5v wireless Legend High Speed NPN Ft /Fmax (MAG)/ BVceo Ft/Fmax (Unilateral Gain) 5HP 0.5um 3.3v 50/50 GHz/3.3V 2003 2004 1997 1998 1999 2000 2001 2002

4. Increasing speed of silicon technologies • “…if it can be done in silicon; it will be done in silicon…” • Focus: • on large V swing • High power • Small scale integration • 10 & 40 Gbps hardware shipping • 1st designs targeting 80 to100 Gbps • 1st designs targeting mmWave • Medium scale integration • 1 & 10 Gbps hardware shipping • 1st publications targeting 40 Gbps • 1st publications targeting 60GHz • Large scale integration

5. Outline • Silicon is ready for mmWave frequencies • Millimeter wave applications • Applications • Challenges • Lets look at 60 GHz WLAN as an example • Exemplary silicon circuits • Looking at higher frequencies • Exemplary circuits (VCOs, LNAs, PA’s…) • And what can we expect silicon mmWave ICs to cost ? • Summary and concluding remarks

6. IEEE Standards Headed Toward 60GHz? • 802.15.3 has the potential to continue the wireless chase, UWB, 60 GHz • WLAN/WPAN may extend its speed advantage 802.11n is addressing this space WLAN may go with 60GHz given it has 5GHz of bandwidth, world wide • Not likely to see real 480-1000Mbps HW until >2006. 60 GHz 802.11n UWB BT 2.0 BT1.0 Drivers include: Frequency allocation WW, bandwidth, capacity, power, cost, reliability

7. Commercial Apps Millimeter Wave Applications • 802.11x Markets • WLAN • WPAN • Automotive Radar at 77/79 GHz • Telecommunications backhaul • Consumer • Wireless Last Mile … • Military Markets (38, 60, 94 GHz) • Future Combat systems • Secure communications • Satellite Communications • Military phased array markets • Reconfigurable, software definable systems Commercial Integrated Wireless Military Military Apps

8. High-Speed Wireless Need Driven by Consumer Apps Low power, short range 100-500Mbps link • Consumer electronics • Replacement for 1394 Fire Wire and other cables • Potential for 150M consumer electronic devices, such as TVs, home automation camera/camcorder, game consoles, music players etc. by 2009. • Computer & peripherals • Replacement for USB, monitor cable, parallel ports and other cables – • Potential for 100M computers and peripherals by 2009. • Other application needs outside home • Healthcare, SOHO, industrial control, wireless sensor network, smartphones, last mile access, positioning & measurements (asset management), radar… Computer applications Consumer electronic applications

9. Key Challenges for Silicon Millimeter-Wave Circuits • Lossy silicon substrate poor isolation, lower Q components. • Need for a predictive design kit such that 1st pass success is achievable. • Accurate transmission line and transistor models. • Accurate parasitic extraction (distinction between device and parasitic blurred). • Silicon CAD tools (e.g. Cadence with EM simulation). • Need to yield circuits in the silicon environment  density requirements on metal, poly, and active layers. Effect on RF performance of passives? • Achieving very high levels of integration in silicon while maintaining MMW functionality.

10. The Challenges of Test: On-Wafer mmWave Circuit Measurements Power Characterization (50-75GHz, 75-90GHz): From VNA Challenges at MMW frequencies: To VNA - on-wafer characterization - cable losses • differential measurements Input Balun Output Balun Noise Characterization (50-75GHz, 75-90GHz): S-Parameters (40MHz to 110GHz): Low Noise Downconverter 110GHz VNA system diplexers to Noise Figure Meter Noise Source MMW modules

11. 60GHz Link Budget LOS: line-of sight OLOS: obstructed (by person) LOS 1Gbps@20M 1Gbps@3M

12. An Example of a Conventional Architecture Using SiGe Heterodyne Tx • Key Building Block Circuits • Low-Noise Amplifiers • Mixers • Voltage-Controlled Oscillators • Power Amplifiers PA 500MHz + 90° ÷2 PO=+10dBm x3 VCO ÷N ÷N Direct-Convert Rx x3 Pre-Amp LNA 500MHz 90° Gain=16dB NF=15dB Gain=17dB NF=4 dB Gain=33dB, NF=6dB Circuits built & tested

13. 20 Gain 18 16 dB 14 12 10 8 NF 6 4 2 Frequency (GHz) 0 58 59 60 61 62 63 64 65 Key 60 GHz Circuits Already Built and Tested: Power Amplifier Low Noise Amplifier Icc = 6 mA Vcc = 1.8 V NF (at 60GHz) = 3.3-3.7 dB NF (at 63 GHz) =4.2-4.6 dB Mean NF = 3.7 dB • Gain = 10.8 dB • P1 dB = 11.2 dBm • Psat = 16.2 dBm • 130 mA at 2.5V Direct Conversion Mixer Voltage Controlled Oscillator • VCO Meas’d performance • -102 dBc/Hz @ 1MHz • 8mA at 3V • Pout -11 dBm • First Gilbert-cell mixers at 60 GHz. • Highest integration level for any technology at 60 GHz. • 80 transistors • 43 transmission lines or inductors • Meas’d performance comparable or exceeding GaAs • NF (< 15 dB), • conversion gain (> 16 dB), • Vcc = 2.7V • power (150 mW “core”) -102dBc/Hz @ 1MHz ISSCC 2004 Output Spectrum / Phase Noise

14. Antenna Buffer LNA1 LNA2 (Different Chip) (Active Balun) Gilbert Buffer Mixers LO Pilot Input Differential Branch- 19.67 - Line Directional 21.33 GHz Buffer Coupler Frequency Tripler Termination Buffer Resistor 60-GHz Direct-Conversion Quadrature Downconverter World’s first 60GHz silicon direct down conversion mixer • First Gilbert-cell mixers at 60 GHz. • Highest reported integration level for any technology at 60 GHz. • 80 transistors • 43 transmission lines or inductors • Performance comparable or exceeding GaAs • NF (< 15 dB), • conversion gain (> 16 dB), • power (150 mW “core”) 1.9mm x 1.65mm

15. What are the next steps ? • Make mmWave components look to users just like other low frequency semiconductor components • Broaden the number of potential users worldwide • A new generation of mmWave applications • Demonstrating • Monolithic Tx chip and • Monolithic Rx chip • Low cost package which does not require end users to have sophisticated mmWave test and packaging skills • Plastic package • Chip • Antenna

16. 60-GHz Receiver and Transmitter Receiver Baseband BB Amp IF Mixer Image-rejectLNA DAC IF Amp I Input 59-64 GHz ÷2 x3 Q ÷ 32 PLL LPF CP PFD Transmitter I x3 ADC PA Output 59-64 GHz ÷2 Q IF Amp Image-reject Driver IF Mixer

17. Summary of Transceiver Specifications.

18. Mixer & IFVGA Tripler IN Tripler Driver Amp Mixer & IFVGA PA LNA Out IF Mix PLL PLL IF Mix RCLK BB Amp BB Amp Baseband Inputs Baseband Outputs 60-GHz Transmitter Layout Size: 4.0 x 1.5 mm2 60-GHz Receiver Layout Size: 3.4 x 1.6 mm2

19. Concept of Fully Integrated mmWave Transceiver • IBM SiGe technology with >200GHz fT/fmax • highly integrated silicon based MMW transceiver ICs low-cost package including fully integrated MMW transceiver and antennas Quarter Sized Transceiver • small wave length (e.g. ~ 5mm @ 60GHz) • antenna in package • no MMW signal off or on package

20. Outline • Silicon is ready for mmWave frequencies • Millimeter wave applications • Applications • Challenges • Lets look at 60 GHz WLAN as an example • Exemplary silicon circuits • Looking at higher frequencies • Exemplary circuits (VCOs, LNAs, PA’s…) • And what can we expect silicon mmWave ICs to cost ? • Summary and concluding remarks

21. SiGe integration & volumes CMOS integration & volumes …and what can we expect silicon mmWave ICs to cost ? • Keys to driving cost…look at 802.11x WLANs as an example • Establishing an industry standard (802.11b) • Generating volumes: • Chip sets “everywhere” (PCs, enterprise & SOHO access points, adaptor cards, etc….) • “riding” the silicon cost curve • Silicon integration (1st in SiGe, then in CMOS) (chip set includes RF transceiver, PA, BB, MAC) • Mmwave ICs in SiGe can be expected to follow similar historical trends !

22. Outline • Silicon is ready for mmWave frequencies • Millimeter wave applications • Applications • Challenges • Lets look at 60 GHz WLAN as an example • Exemplary silicon circuits • Looking at higher frequencies • Exemplary circuits (VCOs, LNAs, PA’s…) • And what can we expect silicon mmWave ICs to cost ? • Summary and concluding remarks

23. ….this is only the beginning ! CMOS lithography Quasi-optical Band Next Gen • New transistors and passives open up bands to 150 GHz ! • Imaging • Wireless measurements • ???? Target 300GHz/TBD 0.13um 1.2v 8HP mmWave 200/180GHz/1.7V 200/250GHz 7HP 0.18um 1.8v 120/100 GHz/1.8V 120/125GHz Radar (24 GHz Automotive) Wirleline (40 GbpsOC768) wireless 6HP 6HP 0.25um 2.5v 47/60 GHz/3.3V 0.5/0.35um 3.3, 5v wireless Legend High Speed NPN Ft /Fmax (MAG)/ BVceo Ft/Fmax (Unilateral Gain) 5HP 0.5um 3.3v 50/50 GHz/3.3V 2003 2004 1997 1998 1999 2000 2001 2002

24. Summary & concluding remarks • “…anything that can be done in silicon; will be done in silicon…” • SiGe enables low power & high level integration not possible in III-V technologies • We have demonstrated key mmWave building block circuits in SiGe with performance suitable for enabling the 60 GHz ISM band • highest integration direct-conversion mixer • high performance V-band LNAs • power amplifiers • Historical silicon “take down” curves suggest attractive costs for mmWave transceivers based on • Silicon integration • volume growth • We are witnessing the rebirth and renaissance of millimeter wave technology and applications enabled by a new generation of silicon Thank you !