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MURI Plans

MURI Plans. S. E. Thompson March 27, 2005. OUTLINE. SRC and AMD, AMAT, IBM, Intel, TSMC, TI, UMC funded device modeling/characterization work Plans: Single event transient Start with SRC strained Si modeling/calibration SET on State-of-the-art uniaxial strained Si (90-45nm)

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MURI Plans

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  1. MURI Plans S. E. Thompson March 27, 2005

  2. OUTLINE • SRC and AMD, AMAT, IBM, Intel, TSMC, TI, UMC funded device modeling/characterization work • Plans: Single event transient • Start with SRC strained Si modeling/calibration • SET on State-of-the-art uniaxial strained Si (90-45nm) • SET on Future strained devices • Strained Ge transistor • Strained Si and Ge on (110) wafers

  3. Many Ways to Do Strain stress stress 45nm Si1-xGex Si1-xGex Intel 2004 EDL TI 2004 VLSI AMAT 2004 IEDM IBM 2005 VLSI TSMC/Freescalse 2005 Samsung 2005 VLSI Nitride a-Si a-Si Gate Gate Hoyt Removable film pre-anneal 1-2.5GPa stress film Even more on high stress layers Post salicide

  4. Strain Being Adopted by All Strained Si Source: Ti Fujitsu 45 nm CompressiveNitride TensileNitride Si1-xGex Si1-xGex Gate Gate stress stress p-type MOSFET STI PMOS NMOS Source Chipworks: 90 nm Intel,IBM,AMD,TI,Fujitsu

  5. Why Strain: Very Impressive Performance 2004 IEDM Intel

  6. Significantly Alters Band Structure/Transport Biaxial Tension Uniaxial Longitudinal Compression Heavy Hole E K <110> Uniaxial Longitudinal Tension Light Hole Valance Band warping, changes m*, m

  7. Stress Contours 45 nm 140 nm 30 nm -536 120 nm Si0.83Ge0.17 Si0.83Ge0.17 (μm) -83 403 95 STI STI 31 (μm) MPa Source FLOOPs

  8. Device Level Calibration: SRC/Intel Funded • Industrial samples • 30 nm to 1um Si trasistors from 3 companies • Unstressed, uniaxial and biaxial stressed wafer • Bulk and SOI • Fully depleted SOI /Metal Gate • High k/metal gate and sub-micron Ge channel devices

  9. Four-Point Bending Set-Up Force Force Z Y X Strain Force Strain Force Z Y X Bending device

  10. Strain Enhanced Mobility: Model / Measured 50 SiGe S/D [4] Data Uniaxial Longitudinal 40 Model 30 20 Biaxial 500 10 300 Mobility Enhancement (%) -300 -500 0 Biaxial Rim -10 Uniaxial Transverse -20 -30 -40 -50 Stress / MPa

  11. 6 Band K P Including Confinement Schrodinger’s Equation and Poisson’s Equation solved self-consistently using the Finite-Difference Method.

  12. Si and Ge Band Structure Si Ge HH LH HH LH No Stress Top Bottom Top Bottom Biaxial Stress Longitudinal compression

  13. In and Out-of-Plane Masses (Ge) Uniaxial Stress Biaxial Stress m|| m| m| m|| kz kz ky ky kx kx

  14. Si and Ge Band Structure on (100) and (110) Longitudinal compression Si Ge Top Bottom Top Bottom (100) (110) hybrid

  15. Full Transport Model: Calculation of Density of States Si is confined in kz direction. 2-dimensional density of state is given by: And total charge density over all possible bands:

  16. Density of States Mass 3 Longitudinal compressive 2.5 0 2 Effective Mass m*/m Production level stress 1.5 1 0.5 Biaxial tensile 0 0.1 1 10 Stress / GPa

  17. Summary / Next Steps • First-principles quantum mechanical methods for strained Si band structure • Spatially dependent strain-induced band structure • Model charge transport and collection due to single event in FLOOPS/FLOODS • Start with existing MURI developed models • Add strain for Si and Ge transistors

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