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High-Resolution & Low-LER EUV Resist Review Meeting

Detailed review of objectives, milestones, partner interactions, and work progress for high-resolution EUV resists for 22nm node technology.

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High-Resolution & Low-LER EUV Resist Review Meeting

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  1. More Moore SP3-WP6, 12. -13.05. 2005 Review meeting Athens • High resolution and low LER EUV resist Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  2. Specific objectives for SP3 WP6 • ObjectivesHigh resolution and low LER EUV resist for 22 nm Node • 1. Characterize and understand the limiting parameters of CAR resist for high resolution • 2. Evaluate the resolution limit of existing resist. • 3. Understand the formation of Line Edge Roughness and evaluate the impacts on device / propose LER quantification methods. • . Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  3. More Moore SP3 WP6 • Outline: Reporting period 1.1.05-30.4.05 • Milestones and Deliverables status • Interactions between partners • Dissemination/Exploitation:publication, patents • Work progress : highlights, issues • Plans for the next period Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  4. More Moore SP3 WP6 - Partners for Resist evaluation Evangelos Gogolides Peter Leunissen David Nijkerk Electronic Materials Karl van Werden Cyril Vannuffel Jean-Hervé Tortai Michele Bertolo Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  5. 03 2004 2005 2006 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 milestones due M 6.4.1.3 M 6.1.7.1 M 6.4.3.3 M 6.4.3.1 M 6.1. 2.1 M 6.1.6.1 M 6.1.1 M6.4.2.2 M 6.3.1 M 6.1.5.1 M 6.1.2.2 M 6.1.2.3 M 6.4.1.2 M 6.4.3.2 M 6.4.1.1 M 6.1.3.1 M 6.4.2.1 we are here now Milestones status and main achievements Task 6.1 Physicochemical resist characterization Task 6.2 EUV resist systems for the 22nm node Task 6.3 Evaluation of 22nm capability of resist milestones done Task 6.4 Understanding and impact of LER Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  6. 03 2004 2005 2006 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Deliverables due D 6.1.1.1 D 6.4.3.3 D 6..2.2 D 6.4.1.3 D 6.4.1.1 D 6.3.2 D 6.1.6.1 D 6.1.1 D 6.4.3.1 D 6.4.2.3 D 6.1.2 D 6.1.5.1 D 6.4.3.2 D 6.4.2.4 D 6.1.2.1 D 6.2.1 D 6.1.7.1 D 6.1.3.1 D 6.4.1.2 D 6.4.2.2 D 6.4.1.4 D 6.3.1 D 6.4.2.1 we are here now Deliverables status and main achievements Task 6.1 Physicochemical resist characterization Task 6.2 EUV resist systems for the 22nm node Task 6.3 Evaluation of 22nm capability of resist Task 6.4 Understanding and impact of LER Deliverables done Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  7. Milestones due / achieved during the reporting period Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  8. Deliverables due / accomplished during the reporting period postponed to 2Q05 not accepted Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  9. Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  10. Interactions betweens partners Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  11. Interactions betweens partners The following documents/samples have been exchanged between workpackage partners in the reporting period: Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  12. Dissemination/Exploitation in the reporting period : publication, patents Patents: none Publications: IMEC 2 Papers of LER at SPIE Feb.2005 IMEC 1 presentation at SEMATECH workshop on resist limitations, Feb. 27.2005 IMEL 1 Papers of LER at SPIE Feb.2005 IMEL 1 presentation at SEMATECH workshop on resist limitations, Feb. 27.2005 LETI 1 Papers of EUV Resist at SPIE Feb.2005 IMEC Publication in Fabtec on LER IMEC Nanocompound/C-MOS - More Moore training Course, April 2005 Implementation of LER algorithm from More Moore ( IMEL) into CD SEM measurement by Tencor Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  13. Work progress : highlights, issues • IMEL: Presentation of work progress was given at joint More Moore - ExCite meeting 12.5.2005 • Simulation of LER,no CAR and CAR, impact of PAG concentration, diffusion length and molecular weight of polymer • Tg Measurements and development rate of thin films.Dissolutionrate change in dependance of Film thickness influence at 45nm • CNRS: Presentation of work progress was given at joint More Moore - ExCite meeting 12.5.2005 • Thermal characterization of polymers and resist samples in dependance of film thickness. PS,PMMA, PHS, MMC2 MMC3 showed strong effect in thermal extention parameter with filmthickness. Every sample showed individual results. Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  14. Work progress : highlights, issues AZ EM+Elettra: Presentation of work progress on out gassing was given at joint More Moore - ExCite meeting 12.5.2005 PAGs, which create Perfluorsulfonic acids show under EUV outgassing with SO,SO2, contamination source for lenses! AZ EM: Presentation of work progress on EUV resist evaluation was given at joint More Moore - ExCite meeting 12.5.2005 Exposure tests at MET Berkeley with several resist samples didn‘t reach resolution <40 nm, and LER= 5-9 nm 3 Sigma. IMEC Presentation of work progress on LER impact on CD, acid diffusion was given at joint More Moore - ExCite meeting 12.5.2005 Correlation of Correlation coefficent  with acid diffusion was shown at resist samples exposed at MET and PSI TNO Presentation of work progress how LER is influenced by etching was given at joint More Moore - ExCite meeting 12.5.2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  15. Introduction • LER reduction during patterning/etch • 193nm trim experiments • Effects for future technology nodes Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  16. Patterning experiment (193nm) • 110nm line LER is measured • trim step: 40 and 75nm linewidth reduction • 100nm undoped poly-Si • oxide hard mask on top (TeOS, 60nm) • 77nm organic Bottom ARC layer (reflection control <1%) Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  17. Initial reduction in 3s LER Prior 157nm results: no 3s LER reduction LER vs. linewidth loss • Resist parameters: • x=50nm • a=0.3 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  18. Resist shrinkage • KLA eCD1: • 100 pictures consecutive • CD change: 20nm • LER unaltered • Roughness decreases Movie: 1st 100rd Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  19. 5nm 11nm 6nm 2nm Y X Physical understanding • Etch 3nm (isotropically in x- and y-direction, not z-direction) • 1nm step • Simulation example: See also: David Nijkerk Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  20. Effective LWR after patterning • Some LWR reduction achievable, but etch bias is reducing! Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

  21. Plans for the next period • CNRS continue thinfilm studies and exchange data and experimentalresults with IMEL for due deliverable. • Modelling Spin Coating and bake effects and influence of the surface of the substrate • IMEL Thin film : Process conditions effects and substrate effects. Study of the dissolution rate of thin films • preparing common review paper for MNE 2005 • IMEC finishing the due deliverables, continuation of evaluation of new resist samples for LER at PSI and MET • Impact of LER on Cu interconnects • Elettra: Change of experimental set up to test more samples in a outgassing test • AZ EM Analyse of outgassing tests for selection of resist material • Preparation of new PAGs. • CEA Leti: Evaluation of EUV resist samples at PS • TNO:Continue of work on deliverable modelling second elrctron scattering Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

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