1 / 26

Comparison between the STD and the HCl epitaxial process

Comparison between the STD and the HCl epitaxial process. G. Galvagno, F. La Via, A. Firrincieli, S. Di Franco, F. Roccaforte. OUTLINE. Drift mobility in epitaxial layer 4H-SiC (CREE) Characterization of epitaxial layers deposited by ETC ( standard process and HCl process ).

cais
Download Presentation

Comparison between the STD and the HCl epitaxial process

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Comparison between the STD and the HCl epitaxial process G. Galvagno, F. La Via, A. Firrincieli, S. Di Franco, F. Roccaforte.

  2. OUTLINE • Drift mobility in epitaxial layer 4H-SiC (CREE) • Characterization of epitaxial layers deposited by ETC • (standardprocess and HCl process) • Forward I-V characteristics • Reverse I-V characteristics (- 600 V) • Density current vs device size • Breakdown voltage

  3. CREE EPITAXY Th = 6 m - ND = 1.2 x 1016/cm3 - TO220 bonded

  4. R = Repi + Rsub + Rc + Rchuck

  5. Free electron concentrationNitrogen in 4H-SiCimpurity levels: 66, 124 meV

  6. Mobility C  3

  7. Schottky diode (A=1 mm2) vapox Ni2Si (0.2 m) 1 m 1.5 m 0.2 m 20 m N- 1x1013 /cm3 1 mm 60 m 8 m epitaxial layer 0.5 m buffer (ND=1x1018/cm3) substrate  = 0.018  cm 375 m

  8. Die structure A = 1 mm2 A = 0.25 mm2 A = 2 mm2

  9. Yield distribution I (V= -200V) < 1x10-7A 1x10-7A < I (V= -200V) < 1x10-5A I (V= -200V) > 1x10-5A 340e - HCl 382 - standard

  10. Forward I-V characteristics

  11. Forward I-V characteristics

  12. Electron mobility

  13. Reverse current (V = –200V) 10 10 10 10 10 10 10 10 Reverse leakage current @ -200V (A) Reverse leakage current @ -200V (A)

  14. Reverse current (V = - 600V) 10 10 10 10 10 10 10 10 Reverse leakage current @ -600V (A) Reverse leakage current @ -600V (A)

  15. Reverse I-V characteristics STD process

  16. Reverse I-V characteristics vs. doping concentration

  17. Current (A)

  18. Reverse I-V characteristics vs. doping concentration

  19. Diode forward characteristics vs. area

  20. Diode reverse characteristics vs. area

  21. Diode reverse characteristics vs. area

  22. Breakdown

  23. Breakdown Schoen K.J. et al., IEEE Trans. Electron devices 45, 1595 (1998)

  24. Breakdown

  25. Summary • The STD process shows better carrier mobility with respect to the HCl process but the values are lower than the mobility of the CREE epitaxy. • The STD process shows better reverse characteristics with respect to the HCl process. • The leakage current at high voltage depends on the epitaxial layer doping concentration in the case of the STD process. No clear correlation can be observed in the case of the HCl process between the leakage current and the doping concentration of the epitaxial layer. • The forward current (V>1.5 V) and the reverse current depend on the perimeter/area ratio in the case of the STD process. • The breakdown characteristics of the diodes are comparable with the literature data for both the growth process.

More Related