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Single mode lasing by current injection in T-shaped QWRs

Single mode lasing by current injection in T-shaped QWRs. Sample No. 8-4-05.2#2C By Shu-man Liu 2006/4/8. Structure and composition. IL at different temperatures. Fig.2 I-L curves recorded when decreasing current Inset: Threshold current and differential quantum efficiency vs.

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Single mode lasing by current injection in T-shaped QWRs

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  1. Single mode lasing by current injection in T-shaped QWRs Sample No. 8-4-05.2#2C By Shu-man Liu 2006/4/8

  2. Structure and composition

  3. IL at different temperatures Fig.2 I-L curves recorded when decreasing current Inset: Threshold current and differential quantum efficiency vs. temperature Fig.1 I-L curves recorded with increasing current

  4. IV Curves at different temperatures The derivative of the voltage versus injection Current characteristic curve shows a high and bad dynamic series resistance at 5K.

  5. Lasing spectrum at 40K

  6. EL spectrum at 5K With increasing injection current, a new EL peak at high energy appears, which is attributed to emission from doped layer compared with microEL and EL imaging results.

  7. Lasing peak energy vs. T The lasing peak red-shifts with increasing temperature. The solid line in Fig.(b) represents the temperature dependenceof GaAs band-gap energy which wasshifted to fit the QWR peak energies. Thus, the red-shift is due to the band-gapshrink of GaAs with increasing temperature.

  8. Lasing mode hopping The mechanism of modeis not understand.

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