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High Power Test of Single Cell SW Structure at SLAC 070214 T. Higo, Y. Higashi

High Power Test of Single Cell SW Structure at SLAC 070214 T. Higo, Y. Higashi. ILC が決まった後、 SLAC と研究開始 目的 １． Megasonic Rinsing と Dark Current / Break Down の関係　　 Why: 半導体製造で Copper film 使用 CMP (Chemical Mechanical Planarisation) Megasonic による nm オーダの particles 除去

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High Power Test of Single Cell SW Structure at SLAC 070214 T. Higo, Y. Higashi

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  1. High Power Test of Single Cell SW Structure at SLAC070214 T. Higo, Y. Higashi ILCが決まった後、SLACと研究開始 目的 １．Megasonic RinsingとDark Current / Break Downの関係　　Why: 半導体製造でCopper film使用 CMP (Chemical Mechanical Planarisation) Megasonicによるnmオーダのparticles除去 - Towards none particle surface preparation - ２．放電損傷の少ない材料 P. Willsonの理論の検証 ―Pulse e-beam irradiations on various materials ―

  2. 報告の内容 • KEK/SLAC 仕事分担(Budget含む）　 • Megasonic Technologies • Pulse e-beam irradiation • Tentative High power Test Results at SLAC(DolgachevのSlide紹介） （Testした空洞はKEKから送った後、SLACで真空リーク発生ー＞C. Peasonが補修ロー付けー＞表面洗浄なし、Bakingのみ） ・　CLIC情報（SLACでもらったSlide) ・　今後の見通し

  3. 研究の進め方 KEK Structure Fabrication, Assembly and Surface Treatment SLAC Design and Experiments （Exp. Scheduleは特に決めていない）

  4. Megasonic Technologies

  5. Cu - EEM　（CMP（ChemicalMechanicalPlanarization/Polishing）） Done by Koike, Takatomi, Higashi at Toshiba Machine CO on 1995 EEM P-v = 0.1 nm Diamond turning P – v= 20 nm

  6. CMP Mechanism CMP技術大系　（発行：グローバルネット（株））より Cu表面のCMP／洗浄方法が半導体R&Dによりかなり明らかに！！！！

  7. 2nd Single Cell SW structure preparation Megasonic rinsing 960kHz, 600 W, 5 minutes operation Ultra Pure Water 18.2 M W, 2 TOC All parts were applied megasonic rinsing Assemble envelopment: Class 10 No vacuum leak 400 degC baking, period : 5days

  8. 関連する実験結果との比較 • HPWRによるS-Band空洞の性能（五十嵐、山口氏ら） @ Processing Timeが減少した（～３０％） @ Max.　加速勾配の変化ほとんどなし • 埼玉大　DC 放電試験結果 @ 250 MV/m前後で放電 • 今回SLACでの結果（Very Tentative) Dark Current (Field Emissionが多いが． ． ． ． ） @ Acc Gradient was 240MV/m? @ Surface Field seems to be 300MV/m?

  9. 今後の見通し • SLACでHigh Power Test中（補修ロー付け品）とMegasonic RinsingしたCellのDark Currentの比較を1ヶ月以内にSLACでおこなう。(結果をみて決めることになる） • New Design of SW structure ( geometries change -> Shintake Cavity?)

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