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METDA Corporation

METDA Corporation. Shijiazhuang, Hebei Province , China. General Briefing. Headquarter Research Center 34.3 h㎡. General Briefing. New Development Zone Industrial Production Base 66.6 h㎡. METDA Overview.

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METDA Corporation

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  1. METDA Corporation Shijiazhuang, Hebei Province , China

  2. General Briefing Headquarter Research Center 34.3 h㎡

  3. General Briefing New Development Zone Industrial Production Base 66.6 h㎡

  4. METDA Overview • METDA is the International Marketing/Sales company of HSRI. The Holding Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic Technology Development Application Corporation (METDA Corp.) was founded in 1956 with achievements of China’s first Transistor, first Silicon IC, first GaAs IC and first Semiconductor Laser. • METDA has been serving our customers in wireless, fiber optics, aerospace, avionics, medical and satellite communication industries with high-performance, cost competitive and high reliable products. • METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5 Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech Self-invested Corporations and Joint Ventures including several star companies like Bowei and Puxing. • Overseas sales of METDA in 2013 is USD 26 million

  5. Application Areas • Radar • Satellite Communications • Aerospace • Communication station • Optical Communications • Public Security

  6. Product Offering • GaAs and GaN MMIC & devices • Silicon devices • RF& Microwave Hybrid Integrated Circuits • Microwave& Millimeter wave components, modules and subsystems • Optoelectronic devices and modules • MEMS devices and modules • Packaging Solutions

  7. GaAs Devices and MMIC • The GaAs and GaN Division has won more than 100 National Technology Awards • Main categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise FET. Also includes T/R module solutions. • Products are widely served in wireless communication and radar markets. Customized products can be offered

  8. GaAs MMIC Power Amplifiers Digital Phase Shifters Digital Attenuators Switches Limiters Digital True time Delay Power divider/ combination Multi-Functinal Chip Low Noise Amplifiers FET Low Noise FETs Power FETs Internally Matched FETs GaAs Products Range

  9. GaAs MMIC • GaAs Microwave& mm wave MMIC (4) Digital Attenuator f：1-40GHz (1)LNA f：1-40GHz (2) Power Amplifier f：1-40GHz Pout：20-42dBm (5) Switch f：DC-40GHz PIN and FET (6) Limiter f：2-6G、6-18G；C、X Limiting Level：15dBm Max Power：43dBm(CW) (3)Digital Phase Shifter f：1-40GHz RMS：2.5° Bits：1、4、5、6、8

  10. GaAs MMIC Ultra Low Comsuption Low Noise Amplifier 3.2×1.25×0.1mm 2.2×1.8×0.1mm 2.7×1.5×0.1mm 1.2-1.6GHz Gain：24dB Noise Figure：1.0dB P-1 ：4dBm I/O VSWR：2.0/2.0 +5V @ 20mA 40-46GHz Gain：20dB Noise Figure：3.5dB P-1 ：0dBm I/O VSWR：2.0/1.6 +5V @ 6mA 5.0-6.0GHz Gain：21dB Noise Figure：1.2dB P-1 ：-1dBm I/O VSWR：1.8/1.5 +5V @ 8mA

  11. GaAs Power Amplifier MMIC 40-45.5GHz 1W/14dB/18% 34-36GHz 5W/15dB/20% 16-18GHz 14W/16dB/25% 8-12GHz 14W/20dB/40% 6-18GHz 5W/17dB/18% 5-6GHz 16W/24dB/38%

  12. GaAs Power Amplifier MMIC series

  13. GaAs Internally Matched Power Transistor 14-14.5GHz 18W/5dB/23% 8.8-10GHz 35W/7.5dB/40% 7.7-8.5GHz 60W/7dB/35% 5-6GHz 80W/8dB/35% 2.2-2.3GHz 25W/13dB/50% 1.6-1.7GHz 25W/14dB/45%

  14. GaAs Internally Matched Transistors

  15. GaAs T/R Chipset • T/R Chipset Series： • 5.2-5.8GHz GaAs MMIC • 2-6GHz GaAs MMIC • 8.5-10.5GHz GaAs MMIC • 8-12GHz GaAs MMIC • 6-18GHz GaAs MMIC • 15-18GHz GaAs MMIC • … • 34-36GHz GaAs MMIC • 16 categories from L to Ka Band Every T/R Chipset contains： Limiter LNA Switch Digital Attenuator Digital Phase Shifter Driving Amplifier Power Amplifier Driver

  16. GaN Products Range • Capability of simulation for Epitaxial Material strucutre, device structure, circuit design of GaN power devices/MMIC within 100 GHz. • High accurate GaN device model is built matched to the processing platform which forms the model store for GaN Active, Passive device. • Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.

  17. GaN Power MMICProductSeries 90-96GHz 0.5W/8dB/10% 34-36GHz 13W/14dB/20% 16-18GHz 30W/20dB/35% 8.0-12 GHz 50W/23dB/40% 6-18GHz 10W/16dB/20% 2-18GHz 3W/7dB/15% 2.7-3.5GHz 50W/25dB/45%

  18. GaN Power Transistor Series Products 9-10GHz 130W/7dB/36% 6.4-7.2GHz 120W/12dB/55% 5-6GHz 100W/8dB/40% 4.4-5GHz 120W/10dB/45% 2.7-3.5 GHz 150W/12dB/45% 1.8-2.3GHz 30W/13dB/60% 1.14-1.24GHz 65W/15dB/60% 0.9-2GHz 100W/11dB/45%

  19. 3mm MMIC Product LNA SPST Switch SPDT Switch Balance Mixer RF/LO frequency： 86-100GHz IF frequency： DC-4GHz InP Processing 90-96GHz I/O VSWR2.0/2.5 Gain 18dB P-1 ：2dBm Noise Figure 4.5dB 90-96GHz Insertion Loss 2.5dB VSWR 2.0:1 Isolation 25dB Speed 5ns 90-96GHz Insertion Loss 1.8dB VSWR 2.0:1 Isolation 30dB Speed 5ns

  20. Silicon devices • The Silicon Research and Development facility of HSRI provides different ranges of Silicon Transistors and Hybrid Integrated Circuit. • Microwave Power Transistors include Continuous-wave Transistors, Linear Power Transistors, Power Pulsed Transistors and LDMOS Power Transistors. • The facility has also built an advanced 4″1um production line for customization offering. • Products are widely served in Solid State Array Radars, Microwave Communications and Telemetry areas; low noise chips and low power LDMOS chips are widely served in TV receiving systems while optic-diodes are used in security systems of airports and stations.

  21. RF& Microwave Hybrid Integrated Circuits • The Mini-Packaged Microwave/RF circuit centre of HSRI has developed into the largest Microwave/RF circuit supplier in China. • Main categories include Crystal Oscillator, Surface mount RF/Microwave cost-effective components and High Reliable RF/Microwave components. Customized sub-system& integrated assemblies can be offered. • Products are widely served in communication system, such as PHS, GSM, GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high reliable components are well equipped in aerospace& avionics industries with frequency range up to 40 GHz.

  22. RF& Microwave Hybrid Integrated Circuits Filters Oscillators RF/Microwave Amplifiers VCO and Integrated PLS RF/Microwave Mini Integrated Circuit

  23. RF& Microwave Hybrid Integrated Circuits New Update: TR Power Switches Frequency ranges from P band to X band, power ranges from 10W to 1500W, carrier and metal package can be selected. Typical P band Parameter Typical X band Parameter Frequency：100~400MHz Frequency：8.5~10.5GHz Insertion Loss：0.3dB Insertion Loss：0.7dB Isolation：50dBIsolation：30dB Peak Power：1500W Peak Power：20W (10%Duty Cycle，Pulse width 0.1ms) (40% Duty Cycle，Pulse width 6ms)

  24. RF& Microwave Hybrid Integrated Circuits FBAR Chip Filter： FBAR：Film Bulk Acoustic Resonator Dielectric Filter SAW Filter FBAR Filter Typical FBAR Structure

  25. RF& Microwave Hybrid Integrated Circuits Vertical Hole MEMS Filter (2-50GHz) With vertical hole of silicon cavity structure, we achieved the 2nd generation MEMS Filter by decreasing the dimension to 1/3, and increasing the rejection from 60dB to 80dB. 1st Generation Silicon Filter VS. Traditional Cavity Filter 1st Generation Silicon Filter VS. 2nd Generation Silicon Filter

  26. Microwave& Millimeter-wave components, modules and subsystems • The Microwave& Millimeter-wave Division has been providing high reliable Microwave and Millimeter-wave modules and subsystems to the market since 1960s. • The division offers Microwave and Millimeter-wave T/R Modules, Power Modules and subsystem, single/multi channel T/R subsystem, Control Circuits and Frequency Source subsystem. • Products are widely served in Radar and Satellite market.

  27. Microwave& Millimeter-wave components, modules and subsystems C band Chip T/R module 30mm×30mm×8mm，15g Gain：>30dB Psat：>39dBm Power Fluctuation：<±0.3dB P.A.E：>25% X band Chip T/R module 20×20×6mm Frequency：8.6GHz-9.6GHz； Power Output：2 W； Rx Gain：23dB； Rx Noise Figure：4dB；

  28. Microwave& Millimeter-wave components, modules and subsystems 6-18 GHz wideband Minimized T/R module 80mm×50mm×7.4mm Frequency：6GHz~18GHz Tx Power Output：4W Rx Gain：23dB Rx Noise Figure：5dB 34-36GHz 8 Channels T/R Module 40mm×35mm×4.3mm Tx Power Output：26dBm Rx Gain：16dB Rx Noise Figure：4.2dB

  29. Microwave& Millimeter-wave components, modules and subsystems X band Minimized Chip T/R module 80×30×8mm3 Frequency：8～12GHz； Psat：≥10W (CW) ； Tx Efficiency：≥20%； Max Input Power：≥10W；

  30. Microwave& Millimeter-wave components, modules and subsystems Millimeter Wave T/R modulesolution 6 chips：0.4W/ Gain 30dB (33~37GHz) 5 bits PHS ATTEN 2 chips：24dBm/ Gain 15dB (19~23GHz) 6 Bits PHS 5 chips：0.4W (33~37GHz) 5 bits PHS ATTEN 2 chips：24dBm (19~23GHz) 3 chips：0.2W/ Gain 30dB (33~37GHz) 5 bits PHS ATTEN

  31. Optoelectronic devices and modules • The research and development center of Optoelectronic division engages in the opto-semiconductor technologies and the commercialization of solid state lighting solutions, across both visible and non-visible spectrums. • Core products include High Power Semiconductor Laser Arrays, Pulse Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared Photodetector ( QWIP ). • Products have been widely served in fiber optics, navigation, telemetry, avionics, guidance, identification and lighting industries.

  32. MEMS devices and modules • The MEMS division is one of the earliest and largest MEMS Industrial Research Centers in China. • Products include Micro Inertial Devices, Microsensors, RF MEMS Devices and Opto-MEMS Devices • Products are applicable in satellite, aircraft, attitude control of carborne and radar antenna, navigation and guidance markets.

  33. MEMS devices and modules • MSG Series Gyroscope • MSA Series Accelerometer • MPA Series Accelerometer • MVS Series Vibration Sensor • MFS Series Air Flow Sensor • SiMF Series MEMS Filter • MOA Series Optical Attenuator • MGM Series Gas Meter • …… MEMS Gyroscope MEMS Accelerometer MEMS Filter Air Flow Sensor

  34. MEMS devices and modules MEMS Accelerators MEMS Accelerator High g Accelerator Sensor

  35. MEMS devices and modules MEMS Optical Switch and Optical Attenuator MEMS Opto Switch Chip MEMS Opto Variable Attenuator Chip 1×50 MEMS Wave length Selected Switch (WSS) Chip

  36. Packaging Solutions • The Packaging Division has been providing components and custom integrated packaging solutions for more than 40 years. It is awarded as ‘National Industrial Experimental Base of High-Density Packaging for Large Scale Integrated Circuit’. • The division has developed Microwave devices packages, High-Density packages, Micro packages, Optoelectronic devices packages and MEMS packages. A Multilayer Ceramic Package Development & Production Line has been built, and equipped with fully automatic Multilayer Ceramic Package production facility and advanced electronic packaging design system.

  37. Packaging Solutions CBGA、CPGA、CQFP、CSOP、DIP... Integrated Circuit Package MCM Plate LTCC, HTCC HIC Package Microwave Low Noise Pacakge Microwave Package Microwave Power Devices Pacakge Microwave MMIC Package Optical Package MEMS Package LED Package LTCC Package AlN Products

  38. Packaging Solutions Microwave and Optical-electronic Packages

  39. Packaging SolutionsMain Manufacture Process of Optoelectronic Package

  40. METDA Global Partners

  41. Thank you www.metdac.comalex@metdac.com

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