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Depth Profiling using XPS

Depth Profiling using XPS. By alternating the collection of XPS signals for selected peaks of the spectra with sputtering of the top surface layers using ion beam etching, we can construct the depth distributions of the selected elements.

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Depth Profiling using XPS

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  1. Depth Profiling using XPS By alternating the collection of XPS signals for selected peaks of the spectra with sputtering of the top surface layers using ion beam etching, we can construct the depth distributions of the selected elements. The example here illustrates the concentration of the components in WOx vs time of etching (sample depth). Sputtering by 4 keV Ar+ beam was used for the etching. The 3-D graph compiles the W 4f peaks for various depths. Surface is at the front, bulk is in the back. Four peaks are present at the surface (one doublet for W-W and another for W-O), in the bulk W-W doublet is observed only.

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