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Solid state Physics Measurements. Xiaodong Cui Department of Physics The University of Hong Kong. Optical Characterization techniques:. Raman scattering spectroscopy Photoluminescence spectroscopy Rayleigh Scattering spectroscopy
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Solid state Physics Measurements Xiaodong Cui Department of Physics The University of Hong Kong
Optical Characterization techniques: • Raman scattering spectroscopy • Photoluminescence spectroscopy • Rayleigh Scattering spectroscopy • Ultrafast spectroscopy (Kerr rotation, Absorption,..etc) Electric Characterization techniques: • I-V, dI/dV-V, C-V (4K-350K, ~1T) • Optical lithography (~1micron)
1.light source: laser (633nm&532nm)for raman experiment a tungsten lamp for the reflectance spectra experiment 2.a home-made con-focus microscopic system: light spot around 2microns 3.a spectrometer with three gratings(300,600,1200 l/mm) 4.a Charge-Coupled Device array(1024X512) detector to record the spectra Reflectance spectroscopy
wafer catalyst side view slits Ⅱ.Sample preparing • By the standard optical lithography and wet etching procedures. we prepare slits (width 30 micron, length 1 mm) etched completely through the silicon substrate. • Prepared by the chemical vapor deposition method. • The isolated SWNTs are suspended crossing the slits, possible for measurement on single nanotube without the affection of the underlay of silicon .
Reflectance spectra of single wall Carbon Nanotubes Hualing Zeng,et al, Nanotechnology, 19 (2008) 045708
Ultrafast Kerr Rotation spectroscopy – Determine the g factor of semiconductor