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Waveguide

Waveguide. High-Speed Circuits and Systems Laboratory B.M.Yu. Content. Overview Introduction Design and fabrication Simulation measurement Waveguide loss measurement Coupling between shallow-ridge and narrow strip Conclusion. Overview.

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Waveguide

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  1. Waveguide High-Speed Circuits and Systems Laboratory B.M.Yu High-Speed Circuits and Systems Laboratory

  2. Content • Overview • Introduction • Design and fabrication • Simulation • measurement • Waveguide loss measurement • Coupling between shallow-ridge and narrow strip • Conclusion High-Speed Circuits and Systems Laboratory

  3. Overview Optics Express (2010), Low Loss Shallow-Ridge Silicon Waveguide, Po Dong 2 um 0.25 um 3 um Cross section of WG • Buried Oxide: 3 um, Cross section of waveguide: 0.25 um x 2 um • Target : Chip to Chip interconnect (a few tens of centimeter) • Average propagation loss: 0.2740.008 dB/cm in C-band (1530~1565 nm) • Double-level taper: to adiabatically couple from shallow ridge to strip waveguide High-Speed Circuits and Systems Laboratory

  4. Introduction • Silicon photonics: interest area for broad spectrum applications (optical interconnect, sensing, RF photonics) • Submicron wide deeply etched waveguide structures • Efficient and high speed active photonic devices • SOI substrates (Top silicon thickness: 0.25 um) • Lowest propagation loss (in previous reports): 1~2 dB/cm @ 1550 nm • Chip to Chip interconnect & Narrow bandwidth filters in RF photonics • Shallow ridge or thin silicon waveguide • Propagation loss: 0.3~1 dB/cm (selective oxidation fabrication technique) • Difficult to control (device density, hard mask thickness, cross section of WG) • In this paper • Low loss silicon ridge WG: 0.25 um silicon, average propagation loss: 0.274 dB/cm High-Speed Circuits and Systems Laboratory

  5. Design and Fabrication • Simulation • Main reason of waveguide propagation loss: light scattering from etch sidewalls • Minimizing optical field overlap with etched interface (increasing width of WG,decreasing etch depth) • Cross section of wave guide: 2 um x 0.25 um (etch depth: 0.05 um) • Power confinement: 84 % Etch sidewall of WG Shallow-ridge WG High-Speed Circuits and Systems Laboratory

  6. Design and Fabrication • Simulation Group index: ~3.7, effective index: ~2.9 • Etch depth tolerance 0.01 um • Group index variation: 0.0033  5ps delay time difference (50cm waveguide) 40Gbps with a reasonable fabrication tolerance High-Speed Circuits and Systems Laboratory

  7. Design and Fabrication • Simulation bending loss with various bending radii • Bending loss • 90bending with various radii (50~120 um) • @ 100um radii 10-4dB High-Speed Circuits and Systems Laboratory

  8. Design and Fabrication • Fabrication 6 mm 3 mm Top-view of 64 cm waveguide SEM image of WG cross section • Soitec 6” wafers • 0.25 um thick silicon 3um buried oxide • Spiral waveguide (rmin= 300 um) • 6 mm x 3 mm waveguide (length of waveguide: 64cm) High-Speed Circuits and Systems Laboratory

  9. Waveguide loss measurement • Test setup Waveguide (horizontal taper) Optical fiber (TE mode Polarization) ASE ( =1550 nm) Optical fiber Optical spectrum analyzer High-Speed Circuits and Systems Laboratory

  10. Waveguide loss measurement • Loss measurement Insertion loss measured for different WG length as a function of wavelength Waveguide propagation loss using linear fitting @ =1550 nm • Insertion loss is normalized to power measured from direct to direct fiber coupling • Insertion loss = waveguide propagation loss + coupling loss • Waveguide loss: 0.281dB/cm (@ =1550 nm) High-Speed Circuits and Systems Laboratory

  11. Waveguide loss measurement • Loss measurement Waveguide propagation loss as a function of wavelength in C-band Waveguide loss with 9 chip on the same 6” SOI wafer • Average loss ( variation): 0.274 dB/cm 0.008 dB/cm • Same wafer but different average loss  etch depth variation • Average loss (same wafer): 0.299 dB/cm High-Speed Circuits and Systems Laboratory

  12. Coupling between shallow-ridge and narrow strip WG • Double level taper Coupling between shallow-ridge and narrow strip waveguide 3-D simulation result • Narrow strip WG (450 nm x 250 nm): 1.5 um bending radius • In Ring modulator, narrow strip WG is more efficient. • Coupling would be need High-Speed Circuits and Systems Laboratory

  13. Coupling between shallow-ridge and narrow strip WG • Simulation result Coupling loss as a function of taper length • 10um long taper is sufficient in order to achieve <0.25 dB coupling loss • Highly index contrast between silicon and oxide High-Speed Circuits and Systems Laboratory

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