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Previous week Nanowire growth on ZnO:Al substrate

Previous week Nanowire growth on ZnO:Al substrate (Good growth is guaranteed, no verification experiment) ① AZO microgap patterning ② PS coating and plasma etching ③ Active channel formation by lateral growth . patterned AZO. Glass substrate. This week AZO etching

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Previous week Nanowire growth on ZnO:Al substrate

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  1. Previousweek Nanowire growth on ZnO:Al substrate (Good growth is guaranteed, no verification experiment) ① AZO microgap patterning ② PS coating and plasma etching ③ Active channel formation by lateral growth patterned AZO Glass substrate

  2. Thisweek AZO etching Diluted HCl (ZnO etchant) didn’t work Etchant formula: HCl:HNO3:H2O = 4:1:500 ~330s is required for complete etching (~130s in ref.)

  3. Thisweek Microgap patterning 1. Polystyrene etch mask (2000rpm 30s spin-coating, 150C baking) → did not endure acid etchant 2. PMMA etch mask (4000rpm 40s spin-coating, 175C baking) Razorblade is used for ~3um separation Following gap is widen and partially peeled off after etching Before etching After etching

  4. Thisweek Microgap patterning Photolithography - 4000rpm 40s spin-coating - 90C 1min soft baking - 3min UV irradiation - 90C 1min hard baking ~10um gap is defined After AZO etching, PR is peeled off Suspection: Poor adhesion of photoresist Before etching After etching

  5. Nextweek • Photoresist coating • HMDS treatment • Soft baking 110C 90s • Hard baking 130C 90s • ZnO lateral growth • PVP dielectric coating • Gate electrode coating • Device measurement

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