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Zinc acetate

New process Reaction between deposited precursor layers Non-hydrolytic ester-elimination reaction. Zinc acetate. Zinc tin oxide. Annealing. Tin tert -butoxide. Substrate. Substrate. Reaction formula Zn( OAc ) 2 + Sn ( O t Bu ) 4 → ZnSnO 3 + BuOAc. Spin-coating of precursor layers.

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Zinc acetate

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  1. New process Reaction between deposited precursor layers Non-hydrolytic ester-elimination reaction Zinc acetate Zinc tin oxide Annealing Tin tert-butoxide Substrate Substrate Reaction formula Zn(OAc)2 + Sn(OtBu)4 → ZnSnO3 + BuOAc

  2. Spin-coating of precursor layers A: Zinc acetate B: Tin tert-butoxide A B Uniform coating Substrate B Dissolve bottom layer Poor coating A Substrate

  3. Experiment B Dissolve bottom layer Poor coating A Substrate 1h annealing 2.5h annealing

  4. Experiment A B Uniform coating Substrate 1h annealing 2.5h annealing

  5. Experiment 0.1M Tin butoxide 0.05M Tin butoxide 0.025M Tin butoxide 4000RPM 6000RPM

  6. Experiment ZnOAc 2000RPM ZnOAc 4000RPM ZnOAc 6000RPM

  7. 6hrs annealing Air 3hrs wet 3hrs Dry 2hrs + Wet 4hrs

  8. Experiment Increasing Zn precursor thickness (0.3M zinc acetate solution) Leakage current (not p-type conductivity) Poor TFT characteristics – Acetate:Tert-butoxide >> 2:1 (Unbalanced)

  9. Experiment Zn acetate + Sn acetate solution 8:1 4:1 2:1 By poor solubility of Sn acetate

  10. Experiment 300°C, 2hr 300°C, 2.5hr 300°C, 1hr

  11. 250°C, 1hr 270°C, 1hr 300°C, 1hr 330°C, 1hr

  12. 0.02M Tin tert-butoxide 0.15M Zinc acetate 0.2M Zinc acetate 0.25M Zinc acetate

  13. 0.025M Tin tert-butoxide 0.15M Zinc acetate 0.2M Zinc acetate 0.25M Zinc acetate

  14. 0.033M Tin tert-butoxide 0.15M Zinc acetate 0.2M Zinc acetate 0.25M Zinc acetate

  15. 3hr 4hr 5hr 6hr

  16. 300°C 310°C 320°C

  17. This week’s best 0.033M Tin tert-butoxide 0.2M Zinc acetate 300°C, 3hrs

  18. UV-treatment 0.033M Tin tert-butoxide No mobility improvement 0.15M Zinc acetate 0.2M Zinc acetate UV 5min

  19. Precursor ratio 0.2MZinc acetate 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide 0.25MZinc acetate 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide

  20. Precursor ratio 0.2MZinc acetate:Tin(IV) acetate = 4:1 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide 0.15MZinc acetate:Tin(IV) acetate = 4:1 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide

  21. Best data 0.15MZinc acetate:Tin(IV) acetate = 4:1 0.035M Tin tert-butoxide 300°C, 3hr Annealing Improved S.S. Vth ~ 0 Increased IOff

  22. 0.03M Tin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate) 0.035M Tin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate)

  23. 0.04M Tin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate) 0.3M Tin tert-butoxide 0.2M Zinc acetate

  24. 0.33M Tin tert-butoxide 0.2M 5% Tin Acetate 0.2M10% Tin Acetate 0.2M15% Tin Acetate 0.35M Tin tert-butoxide 0.2M 5% Tin Acetate 0.2M10% Tin Acetate

  25. 0.33M Tin tert-butoxide 0.2M 5% Indium Acetate 0.2M10% Indium Acetate 0.2M15% Indium Acetate 0.35M Tin tert-butoxide 0.2M 5% Indium Acetate 0.2M10% Indium Acetate

  26. Stabilizer/solvent effect • Zn Acetate 0.2M + MEA 0.2M @ 2-Methoxyethanol • Zn Acetate 0.2M + Acetic acid 0.2M @ 2- Methoxyethanol– was not soluble • Zn Acetate 0.2M + MEA 0.2M Acetic acid 0.2M @ 2- Methoxyethanol 1 3

  27. Stabilizer/solvent effect 4. Zn Acetate 0.2M + MEA 0.2M @ Methanol 5. Zn Acetate 0.2M + Acetic acid 0.2M @ Methanol 6. Zn Acetate 0.2M + MEA 0.2M Acetic acid 0.2M @ Methanol 4 5 6

  28. Stabilizer/solvent effect 7. Zn Acetate 0.2M + Acetylacetone 0.2M @ 2-Methoxyethanol – was not soluble 8. Zn Acetate 0.2M + Acetylacetone 0.2M @ Methanol 8

  29. Indium acetate precursor Zn acetate Zn acetate (10% In acetate) Zn acetate (20% In acetate) Zn acetate (30% In acetate)

  30. Tin acetate precursor Tin 증가 – SS 좋아짐

  31. Cs-In2O3 1% 2% 4% 3%

  32. ZTO 1 2 0.35M SnOtBu + 0.15M 20% ZT 0.35M SnOtBu + 0.1M 20%ZT 4 3 0.4M SnOtBu + 0.1M 20%ZT 0.4M SnOtBu + 0.15M 20%ZT

  33. ZTO UV 1

  34. Cs-In2O3 1% 2% 4% 3%

  35. ZTO 0.03M SnOtBu + 0.15M 20% Sn acetate 0.03M SnOtBu + 0.1M 20% Sn acetate

  36. ZTO 0.035M SnOtBu + 0.15M 15% Sn acetate 0.04M SnOtBu + 0.15M 15% Sn acetate

  37. ZTO 0.35M SnOtBu + 0.2M 15% Sn acetate 0.4M SnOtBu + 0.15M 15% Sn acetate

  38. ZTO 350C 4h data 0.4M SnOtBu + 0.2M Zn acetate

  39. ZTO 300°C Oxygen annealing 0.35M SnOtBu + 0.15M 15% Sn acetate 0.4M SnOtBu + 0.15M 15% Sn acetate 0.4M SnOtBu + 0.15M 15% Sn acetate

  40. Experiment (ZTO) ZnOAc,300°C (Zn+Sn)OAc,300°C ZnOAc,350°C (Zn+Sn)OAc,350°C

  41. Nonhydrolytic sol-gel TOF-SIMS (Zinc tin oxide) Zinc acetate Zn Sn Tin tert-butoxide Substrate Negative Positive Zn-rich Sn-rich

  42. Nonhydrolytic sol-gel XPS (Zinc tin oxide) 엘립소 ZTO 26.7nm Sn3d5 11.8% Sn3d3 19.0% Zn2p3 19.8% Zn2p1 17.6% Sn:(Sn+Zn) = 45:55

  43. Homogeneous film Sn Zn ZTO Substrate

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