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Fabrication and Testing of III-V/Si Tandem Solar Cells by Stefano Soresi at Mid-Term Review

This project involves the development, fabrication, and testing of III-V tandem solar cells on Silicon substrates, aiming to create efficient and cost-effective devices for space and terrestrial applications. The work includes collaboration with partners for material supply and characterization, utilizing techniques like MOVPE, photolithography, and ion beam deposition. Results so far include a monojunction solar cell and tunnel junction structure. Future steps include working on multijunction cells and transferring structures to Si substrates. Stefano has gained skills in epitaxy, processing, and device characterization, with outputs including participation in conferences and projects. Stefano aspires to continue in research, possibly in solar cells or related fields.

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Fabrication and Testing of III-V/Si Tandem Solar Cells by Stefano Soresi at Mid-Term Review

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  1. Fabrication and testing of III-V/Si tandem solar cells Stefano Soresi PROMIS Mid-TermReview London, 7-8 December 2016

  2. Some informations… • Workpackage: 3 (Materials for Energy) • Location: III-V Lab (Palaiseau, France) • Supervisor: Jean Decobert • University: Université de Montpellier • Academic supervisor: Eric Tournié

  3. Personal background • 2005-2010: Scientific High School ‘Lorenzo Respighi’ (Piacenza) • 2010-2013: BachelorDegreein Physicsat the Universityof Parma Thesison MagnetocaloricEffect • 2013-2015: Master Degreein Hard MatterPhysicsatthe University of Parma Thesison CIGS Solar Cellsin collaborationwith Panariagroup Industrie Ceramiche S.p.A. • 2015-2018: PhDatIII-V Lab

  4. Introduction to the project • Fabrication and testing of III-V tandem solar cells on Silicon substrates • Development of all the production steps of a solar cell (no experience on solar cells at III-V Lab before Promis project): design, growth, material characterization, processing, final device characterization • Study of the effects arising from the use of a lattice mismatched substrate • Collaboration with other partners of WP3: • University of Montpellier: supply of adequate substrates • University of Cadiz: TEM characterization of final device • Final aim: realization of efficient and cheap devices for space and terrestrial application

  5. Background • Motivation: need to combine III-V multijunction (high efficiency, efficientbandgapengineering) with silicon (cheap, available, efficient) • Issues: lattice and thermalmismatch, polar/non-polarinterfaces Possibilities: Wafer bonding III-V Lab Direct growth via template University of Montpellier

  6. Experimental techniques • Growth and materialcharacterization: MetalorganicVapourPhaseEpitaxy (MOVPE), XRD, C-V profiles, photoluminescence • Processing: photolithography, ionbeamdeposition (IBD), dualionbeamsputtering (DIBS), ionbeametching (IBE), reactiveionetching (RIE), plasma-enhancedchemicalvapordeposition (PECVD), wetetching • Devicescharacterization: I-V curve and EQE measurements under solar simulator (in collaboration with GeePsCentraleSupelec, Orsay)

  7. Main results: monojunction solar cell Scheme of the most efficient cell SIMS profile Set of 5 photolithographic masks Validated at Probion J-V profile of the most efficient cell Validated at GeePs for photovoltaic applications L-edit

  8. Main results: AlInAs:C/InP:S tunnel junction Scheme of the n on p structure C-V profile Scheme of the p on n structure Validated by Biorad measurements J-V profile (current peak) J-V profile Vpeak= 125 – 200 mV Jpeak= 970 – 1030 A/cm² Specific resistance at low bias : - 3.5-7.8 × 10-5  cm² Validated at GeePs for photovoltaic applications

  9. The next steps First idea for a multijunction solar cell: And then, first attemps with Si substrates…

  10. Summary Aim of the PhD: study and realization of III-V/Si multijunction solar cells • Training on all the steps of the process: ✓ • Setup of a complete photovoltaic production system: ✓ • Design of a set of efficientphotolithographicmasks: ✓ • Monojunction solar cells on InP substrates: ✓ • Efficient tunnel junctions: in progress • Multijunction solar cells on InP substrates: starting • Transfer of the structures on Si substrates: afterwards • Study of the effects due to the new substrates: afterwards

  11. Skills acquired • Epitaxy: how to use a MOVPE reactor; how to prepare a growth; main difficulties and critical aspects of this technique; how to characterize the as-grown samples; brief introduction to MBE growth (secondment in Montpellier) • Processing: how to handle with the main techniques used in III-V Lab clean rooms; how to critically evaluate the as-realized devices and how to implement the different steps of the whole process • Device characterization: how to characterize the complete devices and, in particular, how to identify the sources of eventual defects in the complete production process • Design of a complete set of photolithographic masks

  12. Outputs • Participationat the JournéesNationalesduPhotoVoltaïque (JNPV); Dourdan (France), 01-04/12/2015 • Participation+ poster at the Journées Nano, Micro et Optoélectronique (JNMO); Les Issambres (France), 30/05/2016-01/06/2016 • Participation+ poster at the International Conference on MolecularBeamEpitaxy; Montpellier (France), 04-09/09/2016 • Involvement in the Impetus Project

  13. Future work & aspirations • Stay in the research world (perhaps finding a postdoc) • Possibly, keep working on solar cells or, more generally, on topics that allow to take advantage of the skills acquired (MOVPE and/or clean room processing) • Europe

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