120 likes | 268 Views
GaAs Based High-Power Photodiodes for Advanced LIGO LIGO-G020370-00-Z. David Jackrel, PhD Candidate Dept. of Materials Science and Engineering Advisor: James S. Harris LSC Conference, LHO August 19 th -22 nd , 2002. Photodiode Specifications. InGaAs vs. GaInNAs. GaInNAs InGaAs.
E N D
GaAs Based High-Power Photodiodesfor Advanced LIGOLIGO-G020370-00-Z David Jackrel, PhD Candidate Dept. of Materials Science and Engineering Advisor: James S. Harris LSC Conference, LHO August 19th-22nd, 2002
InGaAs vs. GaInNAs GaInNAs InGaAs
InGaAs vs. GaInNAs PD Designs 2 m 1 m GaInNAs lattice-matched to GaAs!
Rear-Illuminated PD Advantages • High Power • Linear Response • High Speed Conventional PD Adv. LIGO Rear-Illuminated PD
GaInNAs PD Efficiency Eff 20% + 30% + 15% = 65% Measured Reflected Transmitted
Junction “Passivation” Plasma Etching Ar, BCl3, Cl2 Polyimide Spinning Cresol-novolak Resin (AZ 9260 PR)
Future Work • GaInNAs • 2-micron I-Layer • Etching and Passivating • InGaAs • Thinned Substrate • Etching and Passivating • RF Setup • High Power Voltage Source