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InGaAs and GaInNAs(Sb) Advanced LIGO Photodiodes

InGaAs and GaInNAs(Sb) Advanced LIGO Photodiodes. David B. Jackrel , Homan B. Yuen, Seth R. Bank, Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao, and James S. Harris, Jr. Solid State Research Lab, Stanford University LSC Meeting – LHO August 16 th , 2005. LIGO-G050435-00-Z. Outline.

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InGaAs and GaInNAs(Sb) Advanced LIGO Photodiodes

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  1. InGaAs and GaInNAs(Sb)Advanced LIGO Photodiodes David B. Jackrel, Homan B. Yuen, Seth R. Bank, Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao, and James S. Harris, Jr. Solid State Research Lab, Stanford University LSC Meeting – LHO August 16th, 2005 LIGO-G050435-00-Z

  2. Outline • Introduction • AdLIGO Photodiode Specifications • Device Materials • Device Design • GaIn(N)As(Sb) Materials & Device Results • Conclusion

  3. Auxiliary Length Sensing Power Stabilization Advanced LIGO Schematic High-Speed Low Power  Commercial Device 180 W Low Noise Iph ~ 200 mA Commercial Device?

  4. LIGO AS-Photodiode Specifications

  5. 1 eV Materials: InGaAs & GaInNAs GaInNAs(Sb) 25% InGaAs 1064nm light  1.13eV º Ge

  6. I- In0.25Ga0.75As I- GaInNAs(Sb) 8% In, 2% N, (4% Sb) 2m 1m • GaInNAs(Sb) MBE growth with RF-Plasma source for N • Sb surfactant effects improve thin strained nitride films Metamorphic-InGaAs vs. GaInNAsDouble Heterostructres

  7. FCA Back-Illuminated Photodiodes Adv. LIGO Back-Illuminated PD • High Power • Linear Response • High Speed Conventional PD

  8. Outline • Introduction • GaIn(N)As(Sb) Materials and Device Results • Materials Characterization Summary • Dark Current • Bandwidth • Quantum Efficiency • Saturation Power Level • Conclusion & Future Work

  9. Spectral Cathodoluminescence (CL) Imaging to determine Threading Dislocation Density (TDD) B A A B Intensity Peak Energy Materials Characterization Summary Deep-Level Transient Spectroscopy (DLTS) Absorption Spectra XRD-Reciprocal Space Map (224) Photoluminescence (PL) Spectra

  10. Dark Current Density:GaIn(N)As(Sb) Devices - Jdk (A/cm2)

  11.  = 3 mm MM-InGaAs PD MM-InGaAs: 3dB Bandwidth BW ~ 1/RC BW > 200 MHz  = 400 m Psat ~ 10 mW AdLIGO PD Specifications: 3-dB BandwidthSat. Power DC-Scheme: 100 kHz 30 – 100 mW RF-Scheme: 200 MHz AdLIGO RF-Readout Challenging for PDs!

  12. InGaAs & GaInNAs PDs – IQE(w/ FCA & Incomplete Absorption) AdLIGO Requirement Int.

  13. GaIn(N)As(Sb) PD QE InGaAs GaInNAs GaInNAsSb* Int. (* scaled to account for FCA in thick substrates)

  14. Photodiode Saturation Power LIGO GW-PD Requirement InGaAs GaInNAs GaInNAsSb* Bias V: 3 ~ 8 V (* scaled to account for FCA in thick substrates)

  15. Photodiode Results Summary

  16. Conclusion

  17. AdLIGO Photodiode Development: Future Work • Substrate removal •  90 % QE • High-Temperature Packaging • LLO or LHO Damage Threshold Tests? • Compatible with other experiments (GEO-600, MIT?) • Surface Uniformity & Noise Characterization • GEO-600 • Multi-Element Sensors? • Additional pointing information • Spatial mode information • Fabricate AdLIGO Photodiodes

  18. Acknowledgements • National Science Foundation (NSF); this material is based on work supported by the NSF under grants 9900793 and 0140297. • Aaron Ptak, Manuel Romero and Wyatt Metzger at National Renewable Energy Labortatory (NREL) in Golden, CO • Gyles Webster at Accent Optical in San Jose, CA • Thank You

  19. Extra slides

  20. + V Nitrogen cell - V substrate Molecular Beam Epitaxy (MBE) • Effusion cells for In, Ga and Al • Cracking cell for As and Sb • RF-Plasma N cell Deflection Plates (DP) on Plasma Source  protect growth surface from ion damage

  21. Double-HeterostructurePIN Photodiodes eV 2 p- light 1 i- 0 n- -1 -2 0 1 2 3 m N- and P- transparent  Absorption occurs in I-region where E-field is large InGaAs DH-PIN device simulated by ATLAS (Silvaco)

  22. misfit dislocation Lattice-Mismatched Epitaxy h < hc afilm afilm > asubstrate hc critical thickness h > hc asubstrate

  23. Materials Results Summary

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