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Initial Oxidation of Silicon Craig P. Taylor, Colorado School of Mines, DMR 0820518

Initial Oxidation of Silicon Craig P. Taylor, Colorado School of Mines, DMR 0820518. O 2. O 2. No barrier for the first O 2 adsorption on H-Si. High effective barrier originates from coverage dependence and diffusion barriers.

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Initial Oxidation of Silicon Craig P. Taylor, Colorado School of Mines, DMR 0820518

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  1. Initial Oxidation of SiliconCraig P. Taylor, Colorado School of Mines, DMR 0820518 O2 O2 • No barrier for the first O2 adsorption on H-Si. • High effective barrier originates from coverage dependence and diffusion barriers. • CH3-Si more resistant to oxidation because O2 must react with ligand first. • Provides a new, microscopic picture of Si oxidation CH3 H H-Si(111) CH3-Si(111) Li et al. J. Chem. Phys. 136 (2012)

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